Reduction of stacking fault density in m -plane GaN grown on SiC

Y. S. Cho, Q. Sun, In-Hwan Lee, T. S. Ko, C. D. Yerino, J. Han, B. H. Kong, H. K. Cho, S. Wang

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Abstract

We report the reduction in basal-plane stacking faults (BSFs) in m -plane GaN grown on m -plane SiC. The origin of BSFs is linked to heteronucleation of m -plane GaN and the presence of N-face basal-plane sidewalls of three-dimensional islands. Graded AlGaN layers help to alleviate mismatched nucleation and the generation of BSFs. Transmission electron microscopy shows that the density of BSFs is decreased to the low 105 cm-1. Anisotropy in on-axis x-ray rocking curves, a salient feature in m -plane GaN heteroepitaxial layers, is greatly reduced. A possible mechanism of BSF generation, and the demonstration of improved InGaNGaN quantum well emission are presented.

Original languageEnglish
Article number111904
JournalApplied Physics Letters
Volume93
Issue number11
DOIs
Publication statusPublished - 2008 Sep 29
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Cho, Y. S., Sun, Q., Lee, I-H., Ko, T. S., Yerino, C. D., Han, J., Kong, B. H., Cho, H. K., & Wang, S. (2008). Reduction of stacking fault density in m -plane GaN grown on SiC. Applied Physics Letters, 93(11), [111904]. https://doi.org/10.1063/1.2985816