Reduction of threading dislocations in InGaN/GaN double heterostructure through the introduction of low-temperature GaN intermediate layer

Doo Hyeb Yoon, Kyu Seok Lee, Ji Beom Yoo, Tae Yeon Seong

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The reduction mechanism of threading dislocation at the interface of InGaN/low-temperature GaN (LT-GaN) layers was investigated by atomic force microscopy, transmission electron microscopy and secondary ion mass spectroscopy measurements. Introducing the LT-GaN intermediate layer onto the InGaN active layer not only prevented indium evaporation during the growth of the p-GaN layer but also suppressed the propagation of threading dislocations from InGaN to p-GaN. The propagation of threading dislocations is reduced by the formation of two-dimensional lateral islands, and further defect generation is prevented by the formation of InxGa1-xN alloy due to the relaxation of lattice mismatch between active InGaN and p-GaN.

Original languageEnglish
Pages (from-to)1253-1258
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number3 A
Publication statusPublished - 2002 Mar 1



  • AFM
  • InGaN
  • LT-GaN
  • SIMS
  • TEM
  • Threading dislocation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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