The reduction mechanism of threading dislocation at the interface of InGaN/low-temperature GaN (LT-GaN) layers was investigated by atomic force microscopy, transmission electron microscopy and secondary ion mass spectroscopy measurements. Introducing the LT-GaN intermediate layer onto the InGaN active layer not only prevented indium evaporation during the growth of the p-GaN layer but also suppressed the propagation of threading dislocations from InGaN to p-GaN. The propagation of threading dislocations is reduced by the formation of two-dimensional lateral islands, and further defect generation is prevented by the formation of InxGa1-xN alloy due to the relaxation of lattice mismatch between active InGaN and p-GaN.
|Number of pages||6|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||3 A|
|Publication status||Published - 2002 Mar|
- Threading dislocation
ASJC Scopus subject areas
- Physics and Astronomy(all)