Reduction of threading dislocations in InGaN/GaN double heterostructure through the introduction of low-temperature GaN intermediate layer

Doo Hyeb Yoon, Kyu Seok Lee, Ji Beom Yoo, Tae Yeon Seong

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The reduction mechanism of threading dislocation at the interface of InGaN/low-temperature GaN (LT-GaN) layers was investigated by atomic force microscopy, transmission electron microscopy and secondary ion mass spectroscopy measurements. Introducing the LT-GaN intermediate layer onto the InGaN active layer not only prevented indium evaporation during the growth of the p-GaN layer but also suppressed the propagation of threading dislocations from InGaN to p-GaN. The propagation of threading dislocations is reduced by the formation of two-dimensional lateral islands, and further defect generation is prevented by the formation of InxGa1-xN alloy due to the relaxation of lattice mismatch between active InGaN and p-GaN.

Original languageEnglish
Pages (from-to)1253-1258
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number3 A
Publication statusPublished - 2002 Mar 1
Externally publishedYes

Fingerprint

Heterojunctions
Lattice mismatch
Indium
Atomic force microscopy
Evaporation
Spectroscopy
Transmission electron microscopy
Temperature
Defects
propagation
Ions
indium
mass spectroscopy
evaporation
atomic force microscopy
transmission electron microscopy
defects
ions

Keywords

  • AFM
  • InGaN
  • LT-GaN
  • MOCVD
  • SIMS
  • TEM
  • Threading dislocation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Reduction of threading dislocations in InGaN/GaN double heterostructure through the introduction of low-temperature GaN intermediate layer",
abstract = "The reduction mechanism of threading dislocation at the interface of InGaN/low-temperature GaN (LT-GaN) layers was investigated by atomic force microscopy, transmission electron microscopy and secondary ion mass spectroscopy measurements. Introducing the LT-GaN intermediate layer onto the InGaN active layer not only prevented indium evaporation during the growth of the p-GaN layer but also suppressed the propagation of threading dislocations from InGaN to p-GaN. The propagation of threading dislocations is reduced by the formation of two-dimensional lateral islands, and further defect generation is prevented by the formation of InxGa1-xN alloy due to the relaxation of lattice mismatch between active InGaN and p-GaN.",
keywords = "AFM, InGaN, LT-GaN, MOCVD, SIMS, TEM, Threading dislocation",
author = "Yoon, {Doo Hyeb} and Lee, {Kyu Seok} and Yoo, {Ji Beom} and Seong, {Tae Yeon}",
year = "2002",
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pages = "1253--1258",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
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number = "3 A",

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TY - JOUR

T1 - Reduction of threading dislocations in InGaN/GaN double heterostructure through the introduction of low-temperature GaN intermediate layer

AU - Yoon, Doo Hyeb

AU - Lee, Kyu Seok

AU - Yoo, Ji Beom

AU - Seong, Tae Yeon

PY - 2002/3/1

Y1 - 2002/3/1

N2 - The reduction mechanism of threading dislocation at the interface of InGaN/low-temperature GaN (LT-GaN) layers was investigated by atomic force microscopy, transmission electron microscopy and secondary ion mass spectroscopy measurements. Introducing the LT-GaN intermediate layer onto the InGaN active layer not only prevented indium evaporation during the growth of the p-GaN layer but also suppressed the propagation of threading dislocations from InGaN to p-GaN. The propagation of threading dislocations is reduced by the formation of two-dimensional lateral islands, and further defect generation is prevented by the formation of InxGa1-xN alloy due to the relaxation of lattice mismatch between active InGaN and p-GaN.

AB - The reduction mechanism of threading dislocation at the interface of InGaN/low-temperature GaN (LT-GaN) layers was investigated by atomic force microscopy, transmission electron microscopy and secondary ion mass spectroscopy measurements. Introducing the LT-GaN intermediate layer onto the InGaN active layer not only prevented indium evaporation during the growth of the p-GaN layer but also suppressed the propagation of threading dislocations from InGaN to p-GaN. The propagation of threading dislocations is reduced by the formation of two-dimensional lateral islands, and further defect generation is prevented by the formation of InxGa1-xN alloy due to the relaxation of lattice mismatch between active InGaN and p-GaN.

KW - AFM

KW - InGaN

KW - LT-GaN

KW - MOCVD

KW - SIMS

KW - TEM

KW - Threading dislocation

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M3 - Article

VL - 41

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EP - 1258

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3 A

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