Reflective and low-resistance Zn/Rh contacts to p-type GaN for flip-chip light-emitting diodes

June O. Song, Woong Ki Hong, Hyun Gi Hong, Kyoung Kook Kim, Takhee Lee, Tae Yeon Seong

Research output: Contribution to journalArticle

7 Citations (Scopus)


We report on the formation of high-quality ohmic contacts to p-type GaN (5 × 1017/cm3) using a Rh (100 nm) layer combined with a 3 nm thick Zn interlayer for high-power flip-chip light-emitting diodes (LEDs). The as-deposited sample produces a nonlinear behavior. However, the samples annealed at 430 and 530°C for 1 min in air become ohmic with a contact resistivity of ∼ 10-5 Ω cm2. Measurements show that the reflectivity of the samples annealed at 530°C is 73% at 460 nm. LEDs fabricated using the Zn/Rh contact layers give forward-bias voltages of 3.09-3.12 V at an injection current of 20 mA.

Original languageEnglish
Pages (from-to)G227-G229
JournalElectrochemical and Solid-State Letters
Issue number9
Publication statusPublished - 2005 Sep 29
Externally publishedYes


ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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