Reflective and low-resistance Zn/Rh contacts to p-type GaN for flip-chip light-emitting diodes

June O. Song, Woong K. Hong, Hyun G. Hong, Kyoung Kook Kim, Takhee Lee, Tae Yeon Seong

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report on the formation of high-quality ohmic contacts to p-type GaN (5 × 1017/cm3) using a Rh (100 nm) layer combined with a 3 nm thick Zn interlayer for high-power flip-chip light-emitting diodes (LEDs). The as-deposited sample produces a nonlinear behavior. However, the samples annealed at 430 and 530°C for 1 min in air become ohmic with a contact resistivity of ∼ 10-5 Ω cm2. Measurements show that the reflectivity of the samples annealed at 530°C is 73% at 460 nm. LEDs fabricated using the Zn/Rh contact layers give forward-bias voltages of 3.09-3.12 V at an injection current of 20 mA.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume8
Issue number9
DOIs
Publication statusPublished - 2005 Sep 29
Externally publishedYes

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low resistance
Light emitting diodes
light emitting diodes
chips
Ohmic contacts
electric contacts
Bias voltage
interlayers
Air
injection
reflectance
electrical resistivity
air
electric potential

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Reflective and low-resistance Zn/Rh contacts to p-type GaN for flip-chip light-emitting diodes. / Song, June O.; Hong, Woong K.; Hong, Hyun G.; Kim, Kyoung Kook; Lee, Takhee; Seong, Tae Yeon.

In: Electrochemical and Solid-State Letters, Vol. 8, No. 9, 29.09.2005.

Research output: Contribution to journalArticle

Song, June O. ; Hong, Woong K. ; Hong, Hyun G. ; Kim, Kyoung Kook ; Lee, Takhee ; Seong, Tae Yeon. / Reflective and low-resistance Zn/Rh contacts to p-type GaN for flip-chip light-emitting diodes. In: Electrochemical and Solid-State Letters. 2005 ; Vol. 8, No. 9.
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