Reliability and performance scaling of very high speed SiGe HBTs

Greg Freeman, Jae-Sung Rieh, Zhijian Yang, Fernando Guarin

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We discuss the SiGe HBT structural changes required for very high performance. The increase in collector concentration, affecting current density and avalanche current, appears to be the most fundamental concern for reliability. In device design, a narrow emitter and reduced poly-single-crystal interfacial oxide are important elements in minimizing device parameter shifts. From the application point of view, avalanche hot-carriers appear to present new constraints, which may be managed through limiting voltage (to 1.5×-2× BVCEO), or through circuit designs robust to base current parameter shifts.

Original languageEnglish
Pages (from-to)397-410
Number of pages14
JournalMicroelectronics Reliability
Volume44
Issue number3
DOIs
Publication statusPublished - 2004 Mar 1
Externally publishedYes

Fingerprint

Heterojunction bipolar transistors
avalanches
high speed
scaling
Hot carriers
shift
accumulators
Oxides
emitters
Current density
Single crystals
current density
oxides
Networks (circuits)
single crystals
Electric potential
electric potential

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Reliability and performance scaling of very high speed SiGe HBTs. / Freeman, Greg; Rieh, Jae-Sung; Yang, Zhijian; Guarin, Fernando.

In: Microelectronics Reliability, Vol. 44, No. 3, 01.03.2004, p. 397-410.

Research output: Contribution to journalArticle

Freeman, Greg ; Rieh, Jae-Sung ; Yang, Zhijian ; Guarin, Fernando. / Reliability and performance scaling of very high speed SiGe HBTs. In: Microelectronics Reliability. 2004 ; Vol. 44, No. 3. pp. 397-410.
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