Reliability characteristics of 200 GHz fT/285 GHz fMAX SiGe HBTs

Greg Freeman, Zhijian Yang, Fernando Guarin, Jae Sung Rieh, David Ahlgren, Ed Hostetter

Research output: Contribution to conferencePaperpeer-review

3 Citations (Scopus)


Reliability characteristics of SiGe HBTs with 200GHz fT and 285 GHz fMAX are shown and discussed. We review the degradation from avalanche operation, and it is found that the degradation can be predicted using an empirical model that includes integrated avalanche charge and VCB. The model predicts acceptable lifetime degradation with operation up to 1.5-2X BVCEO. We also present for the first time detailed device degradation from accelerated temperature and current stress. The degradation observed compares favorably against other published silicon-based bipolar devices under comparable accelerated current stress.

Original languageEnglish
Number of pages4
Publication statusPublished - 2003
Externally publishedYes
EventGaAs IC Symposium IEEE Gallium Arsenide Intergrated Circuit Symposium - San Diego, CA, United States
Duration: 2003 Nov 92003 Nov 12


OtherGaAs IC Symposium IEEE Gallium Arsenide Intergrated Circuit Symposium
Country/TerritoryUnited States
CitySan Diego, CA

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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