Reliability characteristics of 200 GHz fT/285 GHz fMAX SiGe HBTs

Greg Freeman; Zhijian Yang; Fernando Guarin; Jae Sung Rieh; David Ahlgren; Ed Hostetter

Reliability characteristics of 200 GHz f_T/285 GHz f_MAX SiGe HBTs

Greg Freeman, Zhijian Yang, Fernando Guarin, Jae Sung Rieh, David Ahlgren, Ed Hostetter

Research output: Contribution to conference › Paper › peer-review

Abstract

Reliability characteristics of SiGe HBTs with 200GHz f_T and 285 GHz f_MAX are shown and discussed. We review the degradation from avalanche operation, and it is found that the degradation can be predicted using an empirical model that includes integrated avalanche charge and V_CB. The model predicts acceptable lifetime degradation with operation up to 1.5-2X BV_CEO. We also present for the first time detailed device degradation from accelerated temperature and current stress. The degradation observed compares favorably against other published silicon-based bipolar devices under comparable accelerated current stress.

Original language	English
Pages	187-190
Number of pages	4
Publication status	Published - 2003
Externally published	Yes
Event	GaAs IC Symposium IEEE Gallium Arsenide Intergrated Circuit Symposium - San Diego, CA, United States Duration: 2003 Nov 9 → 2003 Nov 12

Other

Other	GaAs IC Symposium IEEE Gallium Arsenide Intergrated Circuit Symposium
Country/Territory	United States
City	San Diego, CA
Period	03/11/9 → 03/11/12

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Reliability characteristics of 200 GHz fT/285 GHz fMAX SiGe HBTs",

abstract = "Reliability characteristics of SiGe HBTs with 200GHz fT and 285 GHz fMAX are shown and discussed. We review the degradation from avalanche operation, and it is found that the degradation can be predicted using an empirical model that includes integrated avalanche charge and VCB. The model predicts acceptable lifetime degradation with operation up to 1.5-2X BVCEO. We also present for the first time detailed device degradation from accelerated temperature and current stress. The degradation observed compares favorably against other published silicon-based bipolar devices under comparable accelerated current stress.",

author = "Greg Freeman and Zhijian Yang and Fernando Guarin and Rieh, {Jae Sung} and David Ahlgren and Ed Hostetter",

year = "2003",

language = "English",

pages = "187--190",

note = "GaAs IC Symposium IEEE Gallium Arsenide Intergrated Circuit Symposium ; Conference date: 09-11-2003 Through 12-11-2003",

}

TY - CONF

T1 - Reliability characteristics of 200 GHz fT/285 GHz fMAX SiGe HBTs

AU - Freeman, Greg

AU - Yang, Zhijian

AU - Guarin, Fernando

AU - Rieh, Jae Sung

AU - Ahlgren, David

AU - Hostetter, Ed

PY - 2003

Y1 - 2003

N2 - Reliability characteristics of SiGe HBTs with 200GHz fT and 285 GHz fMAX are shown and discussed. We review the degradation from avalanche operation, and it is found that the degradation can be predicted using an empirical model that includes integrated avalanche charge and VCB. The model predicts acceptable lifetime degradation with operation up to 1.5-2X BVCEO. We also present for the first time detailed device degradation from accelerated temperature and current stress. The degradation observed compares favorably against other published silicon-based bipolar devices under comparable accelerated current stress.

AB - Reliability characteristics of SiGe HBTs with 200GHz fT and 285 GHz fMAX are shown and discussed. We review the degradation from avalanche operation, and it is found that the degradation can be predicted using an empirical model that includes integrated avalanche charge and VCB. The model predicts acceptable lifetime degradation with operation up to 1.5-2X BVCEO. We also present for the first time detailed device degradation from accelerated temperature and current stress. The degradation observed compares favorably against other published silicon-based bipolar devices under comparable accelerated current stress.

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UR - http://www.scopus.com/inward/citedby.url?scp=0348195872&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0348195872

SP - 187

EP - 190

T2 - GaAs IC Symposium IEEE Gallium Arsenide Intergrated Circuit Symposium

Y2 - 9 November 2003 through 12 November 2003

ER -

Reliability characteristics of 200 GHz f_T/285 GHz f_MAX SiGe HBTs

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ASJC Scopus subject areas

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