Reliability characteristics of 200 GHz fT/285 GHz fMAX SiGe HBTs

Greg Freeman, Zhijian Yang, Fernando Guarin, Jae-Sung Rieh, David Ahlgren, Ed Hostetter

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Reliability characteristics of SiGe HBTs with 200GHz fT and 285 GHz fMAX are shown and discussed. We review the degradation from avalanche operation, and it is found that the degradation can be predicted using an empirical model that includes integrated avalanche charge and VCB. The model predicts acceptable lifetime degradation with operation up to 1.5-2X BVCEO. We also present for the first time detailed device degradation from accelerated temperature and current stress. The degradation observed compares favorably against other published silicon-based bipolar devices under comparable accelerated current stress.

Original languageEnglish
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Pages187-190
Number of pages4
Publication statusPublished - 2003 Dec 1
Externally publishedYes
EventGaAs IC Symposium IEEE Gallium Arsenide Intergrated Circuit Symposium - San Diego, CA, United States
Duration: 2003 Nov 92003 Nov 12

Other

OtherGaAs IC Symposium IEEE Gallium Arsenide Intergrated Circuit Symposium
CountryUnited States
CitySan Diego, CA
Period03/11/903/11/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Freeman, G., Yang, Z., Guarin, F., Rieh, J-S., Ahlgren, D., & Hostetter, E. (2003). Reliability characteristics of 200 GHz fT/285 GHz fMAX SiGe HBTs. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 187-190)