Reliability of high-speed SiGe heterojunction bipolar transistors under very high forward current density

Jae-Sung Rieh, Kimball M. Watson, Fernando Guarin, Zhijian Yang, Ping Chuan Wang, Alvin J. Joseph, Greg Freeman, Seshadri Subbanna

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

As device scaling for higher performance bipolar transistors continues, the operation current density increases as well. To investigate the reliability impact of the increased operation current density on Si-based bipolar transistors, an accelerated-current wafer-level stress was conducted on 120-GHz SiGe heterojunction bipolar transistors (HBTs), with stress current density up to as high as JC = 34 mA//μm2. With a novel projection technique based on accelerated-current stress, a current gain shift of less than ∼15% after 106 h of operation is predicted at T = 140°C. Degradation mechanisms for the observed dc parameter shifts are discussed for various VBE regions, and the separation of current stress effect from self-heating effect is made based on thermal resistance of the devices. Module-level stress results are shown to be consistent with wafer-level stress results. The results obtained in this work indicate that the high-speed SiGe HBTs employed for the stress are highly reliable for a long-term operation at the high operation current density.

Original languageEnglish
Pages (from-to)31-38
Number of pages8
JournalIEEE Transactions on Device and Materials Reliability
Volume3
Issue number2
DOIs
Publication statusPublished - 2003 Jun 1
Externally publishedYes

Fingerprint

Heterojunction bipolar transistors
Current density
Bipolar transistors
Heat resistance
Heating
Degradation

Keywords

  • Bipolar transistors
  • Reliability
  • Stress measurement

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Reliability of high-speed SiGe heterojunction bipolar transistors under very high forward current density. / Rieh, Jae-Sung; Watson, Kimball M.; Guarin, Fernando; Yang, Zhijian; Wang, Ping Chuan; Joseph, Alvin J.; Freeman, Greg; Subbanna, Seshadri.

In: IEEE Transactions on Device and Materials Reliability, Vol. 3, No. 2, 01.06.2003, p. 31-38.

Research output: Contribution to journalArticle

Rieh, Jae-Sung ; Watson, Kimball M. ; Guarin, Fernando ; Yang, Zhijian ; Wang, Ping Chuan ; Joseph, Alvin J. ; Freeman, Greg ; Subbanna, Seshadri. / Reliability of high-speed SiGe heterojunction bipolar transistors under very high forward current density. In: IEEE Transactions on Device and Materials Reliability. 2003 ; Vol. 3, No. 2. pp. 31-38.
@article{bcefe532aa9c4d1d8923def2852d4918,
title = "Reliability of high-speed SiGe heterojunction bipolar transistors under very high forward current density",
abstract = "As device scaling for higher performance bipolar transistors continues, the operation current density increases as well. To investigate the reliability impact of the increased operation current density on Si-based bipolar transistors, an accelerated-current wafer-level stress was conducted on 120-GHz SiGe heterojunction bipolar transistors (HBTs), with stress current density up to as high as JC = 34 mA//μm2. With a novel projection technique based on accelerated-current stress, a current gain shift of less than ∼15{\%} after 106 h of operation is predicted at T = 140°C. Degradation mechanisms for the observed dc parameter shifts are discussed for various VBE regions, and the separation of current stress effect from self-heating effect is made based on thermal resistance of the devices. Module-level stress results are shown to be consistent with wafer-level stress results. The results obtained in this work indicate that the high-speed SiGe HBTs employed for the stress are highly reliable for a long-term operation at the high operation current density.",
keywords = "Bipolar transistors, Reliability, Stress measurement",
author = "Jae-Sung Rieh and Watson, {Kimball M.} and Fernando Guarin and Zhijian Yang and Wang, {Ping Chuan} and Joseph, {Alvin J.} and Greg Freeman and Seshadri Subbanna",
year = "2003",
month = "6",
day = "1",
doi = "10.1109/TDMR.2003.813990",
language = "English",
volume = "3",
pages = "31--38",
journal = "IEEE Transactions on Device and Materials Reliability",
issn = "1530-4388",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - Reliability of high-speed SiGe heterojunction bipolar transistors under very high forward current density

AU - Rieh, Jae-Sung

AU - Watson, Kimball M.

AU - Guarin, Fernando

AU - Yang, Zhijian

AU - Wang, Ping Chuan

AU - Joseph, Alvin J.

AU - Freeman, Greg

AU - Subbanna, Seshadri

PY - 2003/6/1

Y1 - 2003/6/1

N2 - As device scaling for higher performance bipolar transistors continues, the operation current density increases as well. To investigate the reliability impact of the increased operation current density on Si-based bipolar transistors, an accelerated-current wafer-level stress was conducted on 120-GHz SiGe heterojunction bipolar transistors (HBTs), with stress current density up to as high as JC = 34 mA//μm2. With a novel projection technique based on accelerated-current stress, a current gain shift of less than ∼15% after 106 h of operation is predicted at T = 140°C. Degradation mechanisms for the observed dc parameter shifts are discussed for various VBE regions, and the separation of current stress effect from self-heating effect is made based on thermal resistance of the devices. Module-level stress results are shown to be consistent with wafer-level stress results. The results obtained in this work indicate that the high-speed SiGe HBTs employed for the stress are highly reliable for a long-term operation at the high operation current density.

AB - As device scaling for higher performance bipolar transistors continues, the operation current density increases as well. To investigate the reliability impact of the increased operation current density on Si-based bipolar transistors, an accelerated-current wafer-level stress was conducted on 120-GHz SiGe heterojunction bipolar transistors (HBTs), with stress current density up to as high as JC = 34 mA//μm2. With a novel projection technique based on accelerated-current stress, a current gain shift of less than ∼15% after 106 h of operation is predicted at T = 140°C. Degradation mechanisms for the observed dc parameter shifts are discussed for various VBE regions, and the separation of current stress effect from self-heating effect is made based on thermal resistance of the devices. Module-level stress results are shown to be consistent with wafer-level stress results. The results obtained in this work indicate that the high-speed SiGe HBTs employed for the stress are highly reliable for a long-term operation at the high operation current density.

KW - Bipolar transistors

KW - Reliability

KW - Stress measurement

UR - http://www.scopus.com/inward/record.url?scp=0347119672&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347119672&partnerID=8YFLogxK

U2 - 10.1109/TDMR.2003.813990

DO - 10.1109/TDMR.2003.813990

M3 - Article

AN - SCOPUS:0347119672

VL - 3

SP - 31

EP - 38

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

SN - 1530-4388

IS - 2

ER -