Reliability of loss-coupled 1.55 μm DFB laser diode with automatically buried absorptive InAsP layer

Jae Ho Han, Sung Woong Park

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The authors achieved loss-coupled 1.55μm distributed feedback laser diode incorporating automatically buried absorptive layer implemented by a single step growth that simplifies device fabrication than those of conventional ones. Based on 2800 h of accelerated aging test, estimated lifetime is 1.4 × 106 h at room temperature.

Original languageEnglish
Pages (from-to)636-638
Number of pages3
JournalMicrowave and Optical Technology Letters
Volume49
Issue number3
DOIs
Publication statusPublished - 2007 Mar 1
Externally publishedYes

Fingerprint

Distributed feedback lasers
distributed feedback lasers
Semiconductor lasers
Aging of materials
semiconductor lasers
Fabrication
life (durability)
fabrication
room temperature
Temperature

Keywords

  • Laser reliability
  • Optoelectronic devices
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Reliability of loss-coupled 1.55 μm DFB laser diode with automatically buried absorptive InAsP layer. / Han, Jae Ho; Park, Sung Woong.

In: Microwave and Optical Technology Letters, Vol. 49, No. 3, 01.03.2007, p. 636-638.

Research output: Contribution to journalArticle

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