Reliability of microwave SiGe/Si heterojunction bipolar transistors

Zhenqiang Ma; Pallab Bhattacharya; Jae Sung Rieh; George E. Ponchak; Samuel A. Alterovitz; Edward T. Croke

doi:10.1109/7260.959308

Reliability of microwave SiGe/Si heterojunction bipolar transistors

Zhenqiang Ma, Pallab Bhattacharya, Jae Sung Rieh, George E. Ponchak, Samuel A. Alterovitz, Edward T. Croke

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The degradation behavior of NPN Si/SiGe/Si heterojunction bipolar transistors, grown by solid-source molecular beam epitaxy (MBE), has been studied by accelerated lifetime testing at different ambient temperatures. The degradations of the dc current gain and the microwave performance of the devices are explained in terms of recombination enhanced impurity diffusion (REID) of boron atoms from the base region and the subsequent formation of parasitic energy barriers at the base-emitter and base-collector junctions.

Original language	English
Pages (from-to)	401-403
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	11
Issue number	10
DOIs	https://doi.org/10.1109/7260.959308
Publication status	Published - 2001 Oct
Externally published	Yes

Keywords

Accelerated lifetime testing
HBT reliability
REID
SiGe HBT

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "The degradation behavior of NPN Si/SiGe/Si heterojunction bipolar transistors, grown by solid-source molecular beam epitaxy (MBE), has been studied by accelerated lifetime testing at different ambient temperatures. The degradations of the dc current gain and the microwave performance of the devices are explained in terms of recombination enhanced impurity diffusion (REID) of boron atoms from the base region and the subsequent formation of parasitic energy barriers at the base-emitter and base-collector junctions.",

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AU - Bhattacharya, Pallab

AU - Rieh, Jae Sung

AU - Ponchak, George E.

AU - Alterovitz, Samuel A.

AU - Croke, Edward T.

PY - 2001/10

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AB - The degradation behavior of NPN Si/SiGe/Si heterojunction bipolar transistors, grown by solid-source molecular beam epitaxy (MBE), has been studied by accelerated lifetime testing at different ambient temperatures. The degradations of the dc current gain and the microwave performance of the devices are explained in terms of recombination enhanced impurity diffusion (REID) of boron atoms from the base region and the subsequent formation of parasitic energy barriers at the base-emitter and base-collector junctions.

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KW - SiGe HBT

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