Abstract
The degradation behavior of NPN Si/SiGe/Si heterojunction bipolar transistors, grown by solid-source molecular beam epitaxy (MBE), has been studied by accelerated lifetime testing at different ambient temperatures. The degradations of the dc current gain and the microwave performance of the devices are explained in terms of recombination enhanced impurity diffusion (REID) of boron atoms from the base region and the subsequent formation of parasitic energy barriers at the base-emitter and base-collector junctions.
Original language | English |
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Pages (from-to) | 401-403 |
Number of pages | 3 |
Journal | IEEE Microwave and Wireless Components Letters |
Volume | 11 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2001 Oct |
Externally published | Yes |
Keywords
- Accelerated lifetime testing
- HBT reliability
- REID
- SiGe HBT
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering