Reliability of microwave SiGe/Si heterojunction bipolar transistors

Zhenqiang Ma, Pallab Bhattacharya, Jae Sung Rieh, George E. Ponchak, Samuel A. Alterovitz, Edward T. Croke

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The degradation behavior of NPN Si/SiGe/Si heterojunction bipolar transistors, grown by solid-source molecular beam epitaxy (MBE), has been studied by accelerated lifetime testing at different ambient temperatures. The degradations of the dc current gain and the microwave performance of the devices are explained in terms of recombination enhanced impurity diffusion (REID) of boron atoms from the base region and the subsequent formation of parasitic energy barriers at the base-emitter and base-collector junctions.

Original languageEnglish
Pages (from-to)401-403
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume11
Issue number10
DOIs
Publication statusPublished - 2001 Oct
Externally publishedYes

Keywords

  • Accelerated lifetime testing
  • HBT reliability
  • REID
  • SiGe HBT

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Reliability of microwave SiGe/Si heterojunction bipolar transistors'. Together they form a unique fingerprint.

Cite this