Reliable Multistate Data Storage with Low Power Consumption by Selective Oxidation of Pyramid-Structured Resistive Memory

Youngjin Kim, Hanhyeong Choi, Hyun S. Park, Moon Sung Kang, Keun Young Shin, Sang-Soo Lee, Jong Hyuk Park

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Multilevel data storage using resistive random access memory (RRAM) has attracted significant attention for addressing the challenges associated with the rapid advances in information technologies. However, it is still difficult to secure reliable multilevel resistive switching of RRAM due to the stochastic and multiple formation of conductive filaments (CFs). Herein, we demonstrate that a single CF, derived from selective oxidation by a structured Cu active electrode, can solve the reliability issue. High-quality pyramidal Cu electrodes with a sharp tip are prepared via the template-stripping method. Morphology-dependent surface energy facilitates the oxidation of Cu atoms at the tip rather than in other regions, and the tip-enhanced electric fields can accelerate the transport of the generated Cu ions. As a result, CF growth occurs mainly at the tip of the pyramidal electrode, which is confirmed by high-resolution electron microscopy and elemental analysis. The RRAM exhibits highly uniform and low forming voltages (the average forming voltage and its standard deviation for 20 pyramid-based RRAMs are 0.645 and 0.072 V, respectively). Moreover, all multilevel resistance states for the RRAMs are clearly distinguished and show narrow distributions within 1 order of magnitude, leading to reliable cell-to-cell performance for MLC operation.

Original languageEnglish
Pages (from-to)38643-38650
Number of pages8
JournalACS Applied Materials and Interfaces
Volume9
Issue number44
DOIs
Publication statusPublished - 2017 Nov 8

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Electric power utilization
Data storage equipment
Oxidation
Electrodes
High resolution electron microscopy
Electric potential
Interfacial energy
Information technology
Electric fields
Ions
Atoms
Chemical analysis
RRAM

Keywords

  • conductive filament
  • multilevel resistive memory
  • pyramidal electrode
  • resistive switching
  • surface energy
  • tip-enhanced electric field

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Reliable Multistate Data Storage with Low Power Consumption by Selective Oxidation of Pyramid-Structured Resistive Memory. / Kim, Youngjin; Choi, Hanhyeong; Park, Hyun S.; Kang, Moon Sung; Shin, Keun Young; Lee, Sang-Soo; Park, Jong Hyuk.

In: ACS Applied Materials and Interfaces, Vol. 9, No. 44, 08.11.2017, p. 38643-38650.

Research output: Contribution to journalArticle

Kim, Youngjin ; Choi, Hanhyeong ; Park, Hyun S. ; Kang, Moon Sung ; Shin, Keun Young ; Lee, Sang-Soo ; Park, Jong Hyuk. / Reliable Multistate Data Storage with Low Power Consumption by Selective Oxidation of Pyramid-Structured Resistive Memory. In: ACS Applied Materials and Interfaces. 2017 ; Vol. 9, No. 44. pp. 38643-38650.
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