Reliable organic nonvolatile memory device using a polyfluorene-derivative single-layer film

Tae Wook Kim; Seung Hwan Oh; Hyejung Choi; Gunuk Wang; Hyunsang Hwang; Dong Yu Kim; Takhee Lee

doi:10.1109/LED.2008.2000967

Reliable organic nonvolatile memory device using a polyfluorene-derivative single-layer film

Tae Wook Kim, Seung Hwan Oh, Hyejung Choi, Gunuk Wang, Hyunsang Hwang, Dong Yu Kim, Takhee Lee

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

This letter describes the reversible switching performance of etal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (I_on/I_off ∼10⁴), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 °C, and an excellent device-to-device switching uniformity.

Original language	English
Pages (from-to)	852-855
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	29
Issue number	8
DOIs	https://doi.org/10.1109/LED.2008.2000967
Publication status	Published - 2008 Aug
Externally published	Yes

Keywords

Organic memory device
Polyfluorene derivative
Reversible switching

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2008.2000967

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title = "Reliable organic nonvolatile memory device using a polyfluorene-derivative single-layer film",

abstract = "This letter describes the reversible switching performance of etal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (Ion/Ioff ∼104), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 °C, and an excellent device-to-device switching uniformity.",

keywords = "Organic memory device, Polyfluorene derivative, Reversible switching",

author = "Kim, {Tae Wook} and Oh, {Seung Hwan} and Hyejung Choi and Gunuk Wang and Hyunsang Hwang and Kim, {Dong Yu} and Takhee Lee",

note = "Funding Information: Manuscript received March 14, 2008. This work was supported in part by the National Research Laboratory (NRL) Programs of the Korean Science and Engineering Foundation (KOSEF), by the Program for Integrated Molecular System at GIST, and by the SystemIC2010 project of the Korean Ministry of Commerce, Industry and Energy. The review of this letter was arranged by Editor T. Wang.",

year = "2008",

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doi = "10.1109/LED.2008.2000967",

language = "English",

volume = "29",

pages = "852--855",

journal = "IEEE Electron Device Letters",

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AU - Kim, Tae Wook

AU - Oh, Seung Hwan

AU - Choi, Hyejung

AU - Wang, Gunuk

AU - Hwang, Hyunsang

AU - Kim, Dong Yu

AU - Lee, Takhee

N1 - Funding Information: Manuscript received March 14, 2008. This work was supported in part by the National Research Laboratory (NRL) Programs of the Korean Science and Engineering Foundation (KOSEF), by the Program for Integrated Molecular System at GIST, and by the SystemIC2010 project of the Korean Ministry of Commerce, Industry and Energy. The review of this letter was arranged by Editor T. Wang.

PY - 2008/8

Y1 - 2008/8

N2 - This letter describes the reversible switching performance of etal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (Ion/Ioff ∼104), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 °C, and an excellent device-to-device switching uniformity.

AB - This letter describes the reversible switching performance of etal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (Ion/Ioff ∼104), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 °C, and an excellent device-to-device switching uniformity.

KW - Organic memory device

KW - Polyfluorene derivative

KW - Reversible switching

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U2 - 10.1109/LED.2008.2000967

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EP - 855

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 8

ER -

Reliable organic nonvolatile memory device using a polyfluorene-derivative single-layer film

Abstract

Keywords

ASJC Scopus subject areas

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