Reliable organic nonvolatile memory device using a polyfluorene-derivative single-layer film

Tae Wook Kim, Seung Hwan Oh, Hyejung Choi, Gunuk Wang, Hyunsang Hwang, Dong Yu Kim, Takhee Lee

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

This letter describes the reversible switching performance of etal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (Ion/Ioff ∼104), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 °C, and an excellent device-to-device switching uniformity.

Original languageEnglish
Pages (from-to)852-855
Number of pages4
JournalIEEE Electron Device Letters
Volume29
Issue number8
DOIs
Publication statusPublished - 2008 Aug
Externally publishedYes

Keywords

  • Organic memory device
  • Polyfluorene derivative
  • Reversible switching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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