Reliable organic nonvolatile memory device using a polyfluorene-derivative single-layer film

Tae Wook Kim; Seung Hwan Oh; Hyejung Choi; Gunuk Wang; Hyunsang Hwang; Dong Yu Kim; Takhee Lee

doi:10.1109/LED.2008.2000967

Reliable organic nonvolatile memory device using a polyfluorene-derivative single-layer film

Tae Wook Kim, Seung Hwan Oh, Hyejung Choi, Gunuk Wang, Hyunsang Hwang, Dong Yu Kim, Takhee Lee

Research output: Contribution to journal › Article

15 Citations (Scopus)

Abstract

This letter describes the reversible switching performance of etal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (I_on/I_off ∼10⁴), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 °C, and an excellent device-to-device switching uniformity.

Original language	English
Pages (from-to)	852-855
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	29
Issue number	8
DOIs	https://doi.org/10.1109/LED.2008.2000967
Publication status	Published - 2008 Aug 1
Externally published	Yes

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Keywords

Organic memory device
Polyfluorene derivative
Reversible switching

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Kim, T. W., Oh, S. H., Choi, H., Wang, G., Hwang, H., Kim, D. Y., & Lee, T. (2008). Reliable organic nonvolatile memory device using a polyfluorene-derivative single-layer film. IEEE Electron Device Letters, 29(8), 852-855. https://doi.org/10.1109/LED.2008.2000967

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Access to Document

10.1109/LED.2008.2000967