Abstract
This letter describes the reversible switching performance of etal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (Ion/Ioff ∼104), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 °C, and an excellent device-to-device switching uniformity.
Original language | English |
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Pages (from-to) | 852-855 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 29 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2008 Aug |
Externally published | Yes |
Keywords
- Organic memory device
- Polyfluorene derivative
- Reversible switching
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering