Reliable organic nonvolatile memory device using a polyfluorene-derivative single-layer film

Tae Wook Kim; Seung Hwan Oh; Hyejung Choi; Gunuk Wang; Hyunsang Hwang; Dong Yu Kim; Takhee Lee

doi:10.1109/LED.2008.2000967

Reliable organic nonvolatile memory device using a polyfluorene-derivative single-layer film

Tae Wook Kim, Seung Hwan Oh, Hyejung Choi, Gunuk Wang, Hyunsang Hwang, Dong Yu Kim, Takhee Lee

Research output: Contribution to journal › Article

15 Citations (Scopus)

Abstract

This letter describes the reversible switching performance of etal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (I_on/I_off ∼10⁴), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 °C, and an excellent device-to-device switching uniformity.

Original language	English
Pages (from-to)	852-855
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	29
Issue number	8
DOIs	https://doi.org/10.1109/LED.2008.2000967
Publication status	Published - 2008 Aug
Externally published	Yes

Keywords

Organic memory device
Polyfluorene derivative
Reversible switching

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2008.2000967

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Kim, T. W., Oh, S. H., Choi, H., Wang, G., Hwang, H., Kim, D. Y., & Lee, T. (2008). Reliable organic nonvolatile memory device using a polyfluorene-derivative single-layer film. IEEE Electron Device Letters, 29(8), 852-855. https://doi.org/10.1109/LED.2008.2000967

@article{5cd1213807d04c89bced1983fb6b9261,

title = "Reliable organic nonvolatile memory device using a polyfluorene-derivative single-layer film",

abstract = "This letter describes the reversible switching performance of etal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (Ion/Ioff ∼104), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 °C, and an excellent device-to-device switching uniformity.",

keywords = "Organic memory device, Polyfluorene derivative, Reversible switching",

author = "Kim, {Tae Wook} and Oh, {Seung Hwan} and Hyejung Choi and Gunuk Wang and Hyunsang Hwang and Kim, {Dong Yu} and Takhee Lee",

year = "2008",

month = aug,

doi = "10.1109/LED.2008.2000967",

language = "English",

volume = "29",

pages = "852--855",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Reliable organic nonvolatile memory device using a polyfluorene-derivative single-layer film

AU - Kim, Tae Wook

AU - Oh, Seung Hwan

AU - Choi, Hyejung

AU - Wang, Gunuk

AU - Hwang, Hyunsang

AU - Kim, Dong Yu

AU - Lee, Takhee

PY - 2008/8

Y1 - 2008/8

N2 - This letter describes the reversible switching performance of etal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (Ion/Ioff ∼104), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 °C, and an excellent device-to-device switching uniformity.

AB - This letter describes the reversible switching performance of etal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (Ion/Ioff ∼104), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 °C, and an excellent device-to-device switching uniformity.

KW - Organic memory device

KW - Polyfluorene derivative

KW - Reversible switching

UR - http://www.scopus.com/inward/record.url?scp=48649101454&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=48649101454&partnerID=8YFLogxK

U2 - 10.1109/LED.2008.2000967

DO - 10.1109/LED.2008.2000967

M3 - Article

AN - SCOPUS:48649101454

VL - 29

SP - 852

EP - 855

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 8

ER -