Reliable organic nonvolatile memory device using a polyfluorene-derivative single-layer film

Tae Wook Kim, Seung Hwan Oh, Hyejung Choi, Gunuk Wang, Hyunsang Hwang, Dong Yu Kim, Takhee Lee

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

This letter describes the reversible switching performance of etal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (Ion/Ioff ∼104), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 °C, and an excellent device-to-device switching uniformity.

Original languageEnglish
Pages (from-to)852-855
Number of pages4
JournalIEEE Electron Device Letters
Volume29
Issue number8
DOIs
Publication statusPublished - 2008 Aug 1
Externally publishedYes

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Derivatives
Data storage equipment
Semiconducting organic compounds
Electric space charge
Thermodynamic stability
Ions

Keywords

  • Organic memory device
  • Polyfluorene derivative
  • Reversible switching

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Reliable organic nonvolatile memory device using a polyfluorene-derivative single-layer film. / Kim, Tae Wook; Oh, Seung Hwan; Choi, Hyejung; Wang, Gunuk; Hwang, Hyunsang; Kim, Dong Yu; Lee, Takhee.

In: IEEE Electron Device Letters, Vol. 29, No. 8, 01.08.2008, p. 852-855.

Research output: Contribution to journalArticle

Kim, Tae Wook ; Oh, Seung Hwan ; Choi, Hyejung ; Wang, Gunuk ; Hwang, Hyunsang ; Kim, Dong Yu ; Lee, Takhee. / Reliable organic nonvolatile memory device using a polyfluorene-derivative single-layer film. In: IEEE Electron Device Letters. 2008 ; Vol. 29, No. 8. pp. 852-855.
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