Abstract
This letter describes the reversible switching performance of etal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (Ion/Ioff ∼104), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 °C, and an excellent device-to-device switching uniformity.
| Original language | English |
|---|---|
| Pages (from-to) | 852-855 |
| Number of pages | 4 |
| Journal | IEEE Electron Device Letters |
| Volume | 29 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2008 Aug 1 |
| Externally published | Yes |
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Keywords
- Organic memory device
- Polyfluorene derivative
- Reversible switching
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Reliable organic nonvolatile memory device using a polyfluorene-derivative single-layer film. / Kim, Tae Wook; Oh, Seung Hwan; Choi, Hyejung; Wang, Gunuk; Hwang, Hyunsang; Kim, Dong Yu; Lee, Takhee.
In: IEEE Electron Device Letters, Vol. 29, No. 8, 01.08.2008, p. 852-855.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Reliable organic nonvolatile memory device using a polyfluorene-derivative single-layer film
AU - Kim, Tae Wook
AU - Oh, Seung Hwan
AU - Choi, Hyejung
AU - Wang, Gunuk
AU - Hwang, Hyunsang
AU - Kim, Dong Yu
AU - Lee, Takhee
PY - 2008/8/1
Y1 - 2008/8/1
N2 - This letter describes the reversible switching performance of etal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (Ion/Ioff ∼104), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 °C, and an excellent device-to-device switching uniformity.
AB - This letter describes the reversible switching performance of etal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (Ion/Ioff ∼104), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 °C, and an excellent device-to-device switching uniformity.
KW - Organic memory device
KW - Polyfluorene derivative
KW - Reversible switching
UR - http://www.scopus.com/inward/record.url?scp=48649101454&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=48649101454&partnerID=8YFLogxK
U2 - 10.1109/LED.2008.2000967
DO - 10.1109/LED.2008.2000967
M3 - Article
AN - SCOPUS:48649101454
VL - 29
SP - 852
EP - 855
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 8
ER -