Remote doping and Schottky barrier formation in strongly quantum confined single PbSe nanowire field-effect transistors

Soong Ju Oh, David K. Kim, Cheri E.R. Kagan

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

We report studies of charge injection and transport in ambipolar, predominantly n-type, and unipolar p-type single, strongly quantum confined PbSe nanowire (NW) field effect transistors (FETs). The PbSe NW FETs operate as Schottky barrier FETs in which the Fermi level is pinned near midgap, consistent with the low ionicity of PbSe, and is nearly invariant with semiconductor doping. Electron and hole mobilities increase monotonically with decreasing temperature, dominated at high temperature by electron-phonon scattering with no evidence of scattering at low temperatures. Transport in NWs is consistent with their single crystalline nature. Surface oxygen used to dope the NWs acts remotely, providing a promising route to dope nanostructures.

Original languageEnglish
Pages (from-to)4328-4334
Number of pages7
JournalACS Nano
Volume6
Issue number5
DOIs
Publication statusPublished - 2012 May 22
Externally publishedYes

Fingerprint

Field effect transistors
Nanowires
nanowires
field effect transistors
Doping (additives)
Semiconductor doping
Charge injection
Phonon scattering
Hole mobility
Electron scattering
Electron mobility
hole mobility
Fermi level
scattering
electron mobility
Temperature
Charge transfer
Nanostructures
routes
Scattering

Keywords

  • Band transport
  • Colloidal nanowires
  • Field effect transistor
  • Remote doping
  • Schottky barrier

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Remote doping and Schottky barrier formation in strongly quantum confined single PbSe nanowire field-effect transistors. / Oh, Soong Ju; Kim, David K.; Kagan, Cheri E.R.

In: ACS Nano, Vol. 6, No. 5, 22.05.2012, p. 4328-4334.

Research output: Contribution to journalArticle

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