Remote modulation doping in van der Waals heterostructure transistors

Donghun Lee, Jea Jung Lee, Yoon Seok Kim, Yeon Ho Kim, Jong Chan Kim, Woong Huh, Jaeho Lee, Sungmin Park, Hu Young Jeong, Young Duck Kim, Chul Ho Lee

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

Doping is required to modulate the electrical properties of semiconductors but introduces impurities that lead to Coulomb scattering, which hampers charge transport. Such scattering is a particular issue in two-dimensional semiconductors because charged impurities are in close proximity to the atomically thin channel. Here we report the remote modulation doping of a two-dimensional transistor that consists of a band-modulated tungsten diselenide/hexagonal boron nitride/molybdenum disulfide heterostructure. The underlying molybdenum disulfide channel is remotely doped via controlled charge transfer from dopants on the tungsten diselenide surface. The modulation-doped device exhibits two-dimensional-confined charge transport and the suppression of impurity scattering, shown by increasing mobility with decreasing temperature. Our molybdenum disulfide modulation-doped field-effect transistors exhibit a room-temperature mobility of 60 cm2 V–1 s1; in comparison, transistors that have been directly doped exhibit a mobility of 35 cm2 V–1 s1.

Original languageEnglish
Pages (from-to)664-670
Number of pages7
JournalNature Electronics
Volume4
Issue number9
DOIs
Publication statusPublished - 2021 Sep

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Electrical and Electronic Engineering

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