Abstract
Hydrogen (H<inf>2</inf>) plasma treatment at the interface between 4H-SiC substrate and Al<inf>2</inf>O<inf>3</inf> dielectric prepared by the atomic layer deposition (ALD) was performed and its effects on capacitance-voltage characteristics as well as the interface state density (D<inf>it</inf>) was evaluated with metal oxide semiconductor devices. The atomic force microscopy result indicates that the remote H<inf>2</inf> plasma treatment reduces surface roughness. Compared with the non-passivated devices, lower leakage current, lower hysteresis and higher breakdown voltage are attained with remotely hydrogen plasma-treated devices. Without post metallization annealing (PMA), D<inf>it</inf> value more than 10<sup>14</sup> eV<sup>-1</sup> cm<sup>-2</sup> is attained with hydrogen plasma passivated devices, indicating plasma-induced damage on the surface. However, using PMA, D<inf>it</inf> of the H<inf>2</inf> plasma treated device is significantly reduced to as low as 1.00 × 10<sup>12</sup> eV<sup>-1</sup> cm<sup>-2</sup> at E<inf>c</inf> - E<inf>t</inf> = 0.4 eV and is about five times lower than that of sample without H<inf>2</inf> plasma passivation (D<inf>it</inf> = 4.84 × 10<sup>12</sup> eV<sup>-1</sup> cm<sup>-2</sup>).
| Original language | English |
|---|---|
| Article number | 9882 |
| Pages (from-to) | 239-243 |
| Number of pages | 5 |
| Journal | Microelectronic Engineering |
| Volume | 147 |
| DOIs | |
| Publication status | Published - 2015 Nov 1 |
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Keywords
- ALD Al<inf>2</inf>O<inf>3</inf>
- Plasma hydrogen passivation
- Power device
- SiC
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
Cite this
Remote plasma atomic layer deposited Al<inf>2</inf>O<inf>3</inf> 4H SiC MOS capacitor with remote H<inf>2</inf> plasma passivation and post metallization annealing. / Heo, Seung Chan; Lim, Donghwan; Jung, Woo Suk; Choi, Rino; Yu, Hyun-Yong; Choi, Changhwan.
In: Microelectronic Engineering, Vol. 147, 9882, 01.11.2015, p. 239-243.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
AU - Heo, Seung Chan
AU - Lim, Donghwan
AU - Jung, Woo Suk
AU - Choi, Rino
AU - Yu, Hyun-Yong
AU - Choi, Changhwan
PY - 2015/11/1
Y1 - 2015/11/1
N2 - Hydrogen (H2) plasma treatment at the interface between 4H-SiC substrate and Al2O3 dielectric prepared by the atomic layer deposition (ALD) was performed and its effects on capacitance-voltage characteristics as well as the interface state density (Dit) was evaluated with metal oxide semiconductor devices. The atomic force microscopy result indicates that the remote H2 plasma treatment reduces surface roughness. Compared with the non-passivated devices, lower leakage current, lower hysteresis and higher breakdown voltage are attained with remotely hydrogen plasma-treated devices. Without post metallization annealing (PMA), Dit value more than 1014 eV-1 cm-2 is attained with hydrogen plasma passivated devices, indicating plasma-induced damage on the surface. However, using PMA, Dit of the H2 plasma treated device is significantly reduced to as low as 1.00 × 1012 eV-1 cm-2 at Ec - Et = 0.4 eV and is about five times lower than that of sample without H2 plasma passivation (Dit = 4.84 × 1012 eV-1 cm-2).
AB - Hydrogen (H2) plasma treatment at the interface between 4H-SiC substrate and Al2O3 dielectric prepared by the atomic layer deposition (ALD) was performed and its effects on capacitance-voltage characteristics as well as the interface state density (Dit) was evaluated with metal oxide semiconductor devices. The atomic force microscopy result indicates that the remote H2 plasma treatment reduces surface roughness. Compared with the non-passivated devices, lower leakage current, lower hysteresis and higher breakdown voltage are attained with remotely hydrogen plasma-treated devices. Without post metallization annealing (PMA), Dit value more than 1014 eV-1 cm-2 is attained with hydrogen plasma passivated devices, indicating plasma-induced damage on the surface. However, using PMA, Dit of the H2 plasma treated device is significantly reduced to as low as 1.00 × 1012 eV-1 cm-2 at Ec - Et = 0.4 eV and is about five times lower than that of sample without H2 plasma passivation (Dit = 4.84 × 1012 eV-1 cm-2).
KW - ALD Al<inf>2</inf>O<inf>3</inf>
KW - Plasma hydrogen passivation
KW - Power device
KW - SiC
UR - http://www.scopus.com/inward/record.url?scp=84928817459&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84928817459&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2015.04.059
DO - 10.1016/j.mee.2015.04.059
M3 - Article
AN - SCOPUS:84928817459
VL - 147
SP - 239
EP - 243
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
M1 - 9882
ER -