Remote plasma atomic layer deposited Al<inf>2</inf>O<inf>3</inf> 4H SiC MOS capacitor with remote H<inf>2</inf> plasma passivation and post metallization annealing

Seung Chan Heo, Donghwan Lim, Woo Suk Jung, Rino Choi, Hyun-Yong Yu, Changhwan Choi

Research output: Contribution to journalArticle

9 Citations (Scopus)


Hydrogen (H<inf>2</inf>) plasma treatment at the interface between 4H-SiC substrate and Al<inf>2</inf>O<inf>3</inf> dielectric prepared by the atomic layer deposition (ALD) was performed and its effects on capacitance-voltage characteristics as well as the interface state density (D<inf>it</inf>) was evaluated with metal oxide semiconductor devices. The atomic force microscopy result indicates that the remote H<inf>2</inf> plasma treatment reduces surface roughness. Compared with the non-passivated devices, lower leakage current, lower hysteresis and higher breakdown voltage are attained with remotely hydrogen plasma-treated devices. Without post metallization annealing (PMA), D<inf>it</inf> value more than 10<sup>14</sup> eV<sup>-1</sup> cm<sup>-2</sup> is attained with hydrogen plasma passivated devices, indicating plasma-induced damage on the surface. However, using PMA, D<inf>it</inf> of the H<inf>2</inf> plasma treated device is significantly reduced to as low as 1.00 × 10<sup>12</sup> eV<sup>-1</sup> cm<sup>-2</sup> at E<inf>c</inf> - E<inf>t</inf> = 0.4 eV and is about five times lower than that of sample without H<inf>2</inf> plasma passivation (D<inf>it</inf> = 4.84 × 10<sup>12</sup> eV<sup>-1</sup> cm<sup>-2</sup>).

Original languageEnglish
Article number9882
Pages (from-to)239-243
Number of pages5
JournalMicroelectronic Engineering
Publication statusPublished - 2015 Nov 1



  • ALD Al<inf>2</inf>O<inf>3</inf>
  • Plasma hydrogen passivation
  • Power device
  • SiC

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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