Remote plasma atomic layer deposited Al<inf>2</inf>O<inf>3</inf> 4H SiC MOS capacitor with remote H<inf>2</inf> plasma passivation and post metallization annealing

Seung Chan Heo, Donghwan Lim, Woo Suk Jung, Rino Choi, Hyun-Yong Yu, Changhwan Choi

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Hydrogen (H<inf>2</inf>) plasma treatment at the interface between 4H-SiC substrate and Al<inf>2</inf>O<inf>3</inf> dielectric prepared by the atomic layer deposition (ALD) was performed and its effects on capacitance-voltage characteristics as well as the interface state density (D<inf>it</inf>) was evaluated with metal oxide semiconductor devices. The atomic force microscopy result indicates that the remote H<inf>2</inf> plasma treatment reduces surface roughness. Compared with the non-passivated devices, lower leakage current, lower hysteresis and higher breakdown voltage are attained with remotely hydrogen plasma-treated devices. Without post metallization annealing (PMA), D<inf>it</inf> value more than 10<sup>14</sup> eV<sup>-1</sup> cm<sup>-2</sup> is attained with hydrogen plasma passivated devices, indicating plasma-induced damage on the surface. However, using PMA, D<inf>it</inf> of the H<inf>2</inf> plasma treated device is significantly reduced to as low as 1.00 × 10<sup>12</sup> eV<sup>-1</sup> cm<sup>-2</sup> at E<inf>c</inf> - E<inf>t</inf> = 0.4 eV and is about five times lower than that of sample without H<inf>2</inf> plasma passivation (D<inf>it</inf> = 4.84 × 10<sup>12</sup> eV<sup>-1</sup> cm<sup>-2</sup>).

Original languageEnglish
Article number9882
Pages (from-to)239-243
Number of pages5
JournalMicroelectronic Engineering
Volume147
DOIs
Publication statusPublished - 2015 Nov 1

Fingerprint

MOS capacitors
Plasma devices
Metallizing
Passivation
passivity
capacitors
hydrogen plasma
Annealing
Plasmas
Hydrogen
annealing
MOS devices
capacitance-voltage characteristics
Atomic layer deposition
Interface states
low currents
atomic layer epitaxy
Electric breakdown
semiconductor devices
electrical faults

Keywords

  • ALD Al<inf>2</inf>O<inf>3</inf>
  • Plasma hydrogen passivation
  • Power device
  • SiC

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Remote plasma atomic layer deposited Al<inf>2</inf>O<inf>3</inf> 4H SiC MOS capacitor with remote H<inf>2</inf> plasma passivation and post metallization annealing. / Heo, Seung Chan; Lim, Donghwan; Jung, Woo Suk; Choi, Rino; Yu, Hyun-Yong; Choi, Changhwan.

In: Microelectronic Engineering, Vol. 147, 9882, 01.11.2015, p. 239-243.

Research output: Contribution to journalArticle

@article{862fa3984d49479c8e7588ca4f7cb864,
title = "Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing",
abstract = "Hydrogen (H2) plasma treatment at the interface between 4H-SiC substrate and Al2O3 dielectric prepared by the atomic layer deposition (ALD) was performed and its effects on capacitance-voltage characteristics as well as the interface state density (Dit) was evaluated with metal oxide semiconductor devices. The atomic force microscopy result indicates that the remote H2 plasma treatment reduces surface roughness. Compared with the non-passivated devices, lower leakage current, lower hysteresis and higher breakdown voltage are attained with remotely hydrogen plasma-treated devices. Without post metallization annealing (PMA), Dit value more than 1014 eV-1 cm-2 is attained with hydrogen plasma passivated devices, indicating plasma-induced damage on the surface. However, using PMA, Dit of the H2 plasma treated device is significantly reduced to as low as 1.00 × 1012 eV-1 cm-2 at Ec - Et = 0.4 eV and is about five times lower than that of sample without H2 plasma passivation (Dit = 4.84 × 1012 eV-1 cm-2).",
keywords = "ALD Al<inf>2</inf>O<inf>3</inf>, Plasma hydrogen passivation, Power device, SiC",
author = "Heo, {Seung Chan} and Donghwan Lim and Jung, {Woo Suk} and Rino Choi and Hyun-Yong Yu and Changhwan Choi",
year = "2015",
month = "11",
day = "1",
doi = "10.1016/j.mee.2015.04.059",
language = "English",
volume = "147",
pages = "239--243",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

TY - JOUR

T1 - Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing

AU - Heo, Seung Chan

AU - Lim, Donghwan

AU - Jung, Woo Suk

AU - Choi, Rino

AU - Yu, Hyun-Yong

AU - Choi, Changhwan

PY - 2015/11/1

Y1 - 2015/11/1

N2 - Hydrogen (H2) plasma treatment at the interface between 4H-SiC substrate and Al2O3 dielectric prepared by the atomic layer deposition (ALD) was performed and its effects on capacitance-voltage characteristics as well as the interface state density (Dit) was evaluated with metal oxide semiconductor devices. The atomic force microscopy result indicates that the remote H2 plasma treatment reduces surface roughness. Compared with the non-passivated devices, lower leakage current, lower hysteresis and higher breakdown voltage are attained with remotely hydrogen plasma-treated devices. Without post metallization annealing (PMA), Dit value more than 1014 eV-1 cm-2 is attained with hydrogen plasma passivated devices, indicating plasma-induced damage on the surface. However, using PMA, Dit of the H2 plasma treated device is significantly reduced to as low as 1.00 × 1012 eV-1 cm-2 at Ec - Et = 0.4 eV and is about five times lower than that of sample without H2 plasma passivation (Dit = 4.84 × 1012 eV-1 cm-2).

AB - Hydrogen (H2) plasma treatment at the interface between 4H-SiC substrate and Al2O3 dielectric prepared by the atomic layer deposition (ALD) was performed and its effects on capacitance-voltage characteristics as well as the interface state density (Dit) was evaluated with metal oxide semiconductor devices. The atomic force microscopy result indicates that the remote H2 plasma treatment reduces surface roughness. Compared with the non-passivated devices, lower leakage current, lower hysteresis and higher breakdown voltage are attained with remotely hydrogen plasma-treated devices. Without post metallization annealing (PMA), Dit value more than 1014 eV-1 cm-2 is attained with hydrogen plasma passivated devices, indicating plasma-induced damage on the surface. However, using PMA, Dit of the H2 plasma treated device is significantly reduced to as low as 1.00 × 1012 eV-1 cm-2 at Ec - Et = 0.4 eV and is about five times lower than that of sample without H2 plasma passivation (Dit = 4.84 × 1012 eV-1 cm-2).

KW - ALD Al<inf>2</inf>O<inf>3</inf>

KW - Plasma hydrogen passivation

KW - Power device

KW - SiC

UR - http://www.scopus.com/inward/record.url?scp=84928817459&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84928817459&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2015.04.059

DO - 10.1016/j.mee.2015.04.059

M3 - Article

AN - SCOPUS:84928817459

VL - 147

SP - 239

EP - 243

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

M1 - 9882

ER -