Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing

Seung Chan Heo; Donghwan Lim; Woo Suk Jung; Rino Choi; Hyun Yong Yu; Changhwan Choi

doi:10.1016/j.mee.2015.04.059

Remote plasma atomic layer deposited Al₂O₃ 4H SiC MOS capacitor with remote H₂ plasma passivation and post metallization annealing

Seung Chan Heo, Donghwan Lim, Woo Suk Jung, Rino Choi, Hyun Yong Yu, Changhwan Choi

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Hydrogen (H₂) plasma treatment at the interface between 4H-SiC substrate and Al₂O₃ dielectric prepared by the atomic layer deposition (ALD) was performed and its effects on capacitance-voltage characteristics as well as the interface state density (D_it) was evaluated with metal oxide semiconductor devices. The atomic force microscopy result indicates that the remote H₂ plasma treatment reduces surface roughness. Compared with the non-passivated devices, lower leakage current, lower hysteresis and higher breakdown voltage are attained with remotely hydrogen plasma-treated devices. Without post metallization annealing (PMA), D_it value more than 10¹⁴ eV^-1 cm^-2 is attained with hydrogen plasma passivated devices, indicating plasma-induced damage on the surface. However, using PMA, D_it of the H₂ plasma treated device is significantly reduced to as low as 1.00 × 10¹² eV^-1 cm^-2 at E_c - E_t = 0.4 eV and is about five times lower than that of sample without H₂ plasma passivation (D_it = 4.84 × 10¹² eV^-1 cm^-2).

Original language	English
Article number	9882
Pages (from-to)	239-243
Number of pages	5
Journal	Microelectronic Engineering
Volume	147
DOIs	https://doi.org/10.1016/j.mee.2015.04.059
Publication status	Published - 2015 Nov 1

Keywords

ALD AlO
Plasma hydrogen passivation
Power device
SiC

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2015.04.059

Cite this

@article{862fa3984d49479c8e7588ca4f7cb864,

title = "Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing",

abstract = "Hydrogen (H2) plasma treatment at the interface between 4H-SiC substrate and Al2O3 dielectric prepared by the atomic layer deposition (ALD) was performed and its effects on capacitance-voltage characteristics as well as the interface state density (Dit) was evaluated with metal oxide semiconductor devices. The atomic force microscopy result indicates that the remote H2 plasma treatment reduces surface roughness. Compared with the non-passivated devices, lower leakage current, lower hysteresis and higher breakdown voltage are attained with remotely hydrogen plasma-treated devices. Without post metallization annealing (PMA), Dit value more than 1014 eV-1 cm-2 is attained with hydrogen plasma passivated devices, indicating plasma-induced damage on the surface. However, using PMA, Dit of the H2 plasma treated device is significantly reduced to as low as 1.00 × 1012 eV-1 cm-2 at Ec - Et = 0.4 eV and is about five times lower than that of sample without H2 plasma passivation (Dit = 4.84 × 1012 eV-1 cm-2).",

keywords = "ALD AlO, Plasma hydrogen passivation, Power device, SiC",

author = "Heo, {Seung Chan} and Donghwan Lim and Jung, {Woo Suk} and Rino Choi and Yu, {Hyun Yong} and Changhwan Choi",

note = "Funding Information: This research was supported by Basic Science Research Program through National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2010-0024043 ) and the Future Semiconductor Device Technology Development Program ( 10044842 ) funded By MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium). Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

year = "2015",

month = nov,

day = "1",

doi = "10.1016/j.mee.2015.04.059",

language = "English",

volume = "147",

pages = "239--243",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

}

TY - JOUR

T1 - Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing

AU - Heo, Seung Chan

AU - Lim, Donghwan

AU - Jung, Woo Suk

AU - Choi, Rino

AU - Yu, Hyun Yong

AU - Choi, Changhwan

N1 - Funding Information: This research was supported by Basic Science Research Program through National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2010-0024043 ) and the Future Semiconductor Device Technology Development Program ( 10044842 ) funded By MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium). Publisher Copyright: © 2015 Elsevier B.V. All rights reserved.

PY - 2015/11/1

Y1 - 2015/11/1

N2 - Hydrogen (H2) plasma treatment at the interface between 4H-SiC substrate and Al2O3 dielectric prepared by the atomic layer deposition (ALD) was performed and its effects on capacitance-voltage characteristics as well as the interface state density (Dit) was evaluated with metal oxide semiconductor devices. The atomic force microscopy result indicates that the remote H2 plasma treatment reduces surface roughness. Compared with the non-passivated devices, lower leakage current, lower hysteresis and higher breakdown voltage are attained with remotely hydrogen plasma-treated devices. Without post metallization annealing (PMA), Dit value more than 1014 eV-1 cm-2 is attained with hydrogen plasma passivated devices, indicating plasma-induced damage on the surface. However, using PMA, Dit of the H2 plasma treated device is significantly reduced to as low as 1.00 × 1012 eV-1 cm-2 at Ec - Et = 0.4 eV and is about five times lower than that of sample without H2 plasma passivation (Dit = 4.84 × 1012 eV-1 cm-2).

AB - Hydrogen (H2) plasma treatment at the interface between 4H-SiC substrate and Al2O3 dielectric prepared by the atomic layer deposition (ALD) was performed and its effects on capacitance-voltage characteristics as well as the interface state density (Dit) was evaluated with metal oxide semiconductor devices. The atomic force microscopy result indicates that the remote H2 plasma treatment reduces surface roughness. Compared with the non-passivated devices, lower leakage current, lower hysteresis and higher breakdown voltage are attained with remotely hydrogen plasma-treated devices. Without post metallization annealing (PMA), Dit value more than 1014 eV-1 cm-2 is attained with hydrogen plasma passivated devices, indicating plasma-induced damage on the surface. However, using PMA, Dit of the H2 plasma treated device is significantly reduced to as low as 1.00 × 1012 eV-1 cm-2 at Ec - Et = 0.4 eV and is about five times lower than that of sample without H2 plasma passivation (Dit = 4.84 × 1012 eV-1 cm-2).

KW - ALD AlO

KW - Plasma hydrogen passivation

KW - Power device

KW - SiC

UR - http://www.scopus.com/inward/record.url?scp=84928817459&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2015.04.059

DO - 10.1016/j.mee.2015.04.059

M3 - Article

AN - SCOPUS:84928817459

VL - 147

SP - 239

EP - 243

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

M1 - 9882

ER -