Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing

Seung Chan Heo, Donghwan Lim, Woo Suk Jung, Rino Choi, Hyun Yong Yu, Changhwan Choi

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Hydrogen (H2) plasma treatment at the interface between 4H-SiC substrate and Al2O3 dielectric prepared by the atomic layer deposition (ALD) was performed and its effects on capacitance-voltage characteristics as well as the interface state density (Dit) was evaluated with metal oxide semiconductor devices. The atomic force microscopy result indicates that the remote H2 plasma treatment reduces surface roughness. Compared with the non-passivated devices, lower leakage current, lower hysteresis and higher breakdown voltage are attained with remotely hydrogen plasma-treated devices. Without post metallization annealing (PMA), Dit value more than 1014 eV-1 cm-2 is attained with hydrogen plasma passivated devices, indicating plasma-induced damage on the surface. However, using PMA, Dit of the H2 plasma treated device is significantly reduced to as low as 1.00 × 1012 eV-1 cm-2 at Ec - Et = 0.4 eV and is about five times lower than that of sample without H2 plasma passivation (Dit = 4.84 × 1012 eV-1 cm-2).

Original languageEnglish
Article number9882
Pages (from-to)239-243
Number of pages5
JournalMicroelectronic Engineering
Volume147
DOIs
Publication statusPublished - 2015 Nov 1

Keywords

  • ALD AlO
  • Plasma hydrogen passivation
  • Power device
  • SiC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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