Replacing AgTSSCH2-R with AgTSO 2C-R in EGaIn-based tunneling junctions does not significantly change rates of charge transport

Kung Ching Liao, Hyo Jae Yoon, Carleen M. Bowers, Felice C. Simeone, George M. Whitesides

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42 Citations (Scopus)


This paper compares rates of charge transport by tunneling across junctions with the structures AgTSX(CH2)2nCH3 //Ga2O3 /EGaIn (n=1-8 and X= -SCH2- and -O2C-); here AgTS is template-stripped silver, and EGaIn is the eutectic alloy of gallium and indium. Its objective was to compare the tunneling decay coefficient (β, Å-1) and the injection current (J0, A cm-2) of the junctions comprising SAMs of n-alkanethiolates and n-alkanoates. Replacing AgTSSCH2-R with AgTSO2C-R (R=alkyl chains) had no significant influence on J0 (ca. 3×103 A cm-2) or β (0.75-0.79 Å-1) - an indication that such changes (both structural and electronic) in the AgTSXR interface do not influence the rate of charge transport. A comparison of junctions comprising oligo(phenylene)carboxylates and n-alkanoates showed, as expected, that β for aliphatic (0.79 Å-1) and aromatic (0.60 Å-1) SAMs differed significantly. Either way: For junctions comprising thiolate- and carboxylate-anchored self-assembled monolayers (SAMs) the role of the metal-SAM interface in charge transport by tunneling was investigated and the charge-transport rates were measured. The data suggest that Ag-SAM interfaces having either a thiolate or carboxylate anchoring group may be directly comparable.

Original languageEnglish
Pages (from-to)3889-3893
Number of pages5
JournalAngewandte Chemie - International Edition
Issue number15
Publication statusPublished - 2014 Apr 7
Externally publishedYes


  • EGaIn junction
  • alkanoates
  • charge transport
  • molecular electronics
  • self-assembled monolayer
  • tunneling

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)


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