TY - JOUR
T1 - Replacing -CH 2CH 2- with -CONH- does not significantly change rates of charge transport through Ag TS-SAM//Ga 2O 3/EGaIn junctions
AU - Thuo, Martin M.
AU - Reus, William F.
AU - Simeone, Felice C.
AU - Kim, Choongik
AU - Schulz, Michael D.
AU - Yoon, Hyo Jae
AU - Whitesides, George M.
PY - 2012/7/4
Y1 - 2012/7/4
N2 - This paper describes physical-organic studies of charge transport by tunneling through self-assembled monolayers (SAMs), based on systematic variations of the structure of the molecules constituting the SAM. Replacing a -CH 2CH 2- group with a -CONH- group changes the dipole moment and polarizability of a portion of the molecule and has, in principle, the potential to change the rate of charge transport through the SAM. In practice, this substitution produces no significant change in the rate of charge transport across junctions of the structure Ag TS-S(CH 2) mX(CH 2) nH//Ga 2O 3/EGaIn (TS = template stripped, X = -CH 2CH 2- or -CONH-, and EGaIn = eutectic alloy of gallium and indium). Incorporation of the amide group does, however, increase the yields of working (non-shorting) junctions (when compared to n-alkanethiolates of the same length). These results suggest that synthetic schemes that combine a thiol group on one end of a molecule with a group, R, to be tested, on the other (e.g., HS∼CONH∼R) using an amide-based coupling provide practical routes to molecules useful in studies of molecular electronics.
AB - This paper describes physical-organic studies of charge transport by tunneling through self-assembled monolayers (SAMs), based on systematic variations of the structure of the molecules constituting the SAM. Replacing a -CH 2CH 2- group with a -CONH- group changes the dipole moment and polarizability of a portion of the molecule and has, in principle, the potential to change the rate of charge transport through the SAM. In practice, this substitution produces no significant change in the rate of charge transport across junctions of the structure Ag TS-S(CH 2) mX(CH 2) nH//Ga 2O 3/EGaIn (TS = template stripped, X = -CH 2CH 2- or -CONH-, and EGaIn = eutectic alloy of gallium and indium). Incorporation of the amide group does, however, increase the yields of working (non-shorting) junctions (when compared to n-alkanethiolates of the same length). These results suggest that synthetic schemes that combine a thiol group on one end of a molecule with a group, R, to be tested, on the other (e.g., HS∼CONH∼R) using an amide-based coupling provide practical routes to molecules useful in studies of molecular electronics.
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U2 - 10.1021/ja301778s
DO - 10.1021/ja301778s
M3 - Article
C2 - 22676159
AN - SCOPUS:84863516631
VL - 134
SP - 10876
EP - 10884
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
SN - 0002-7863
IS - 26
ER -