Residual impurities in GaN substrates and epitaxial layers grown by various techniques

Madhu Murthy, Jaime A. Freitas, Ji Hyun Kim, Evan R. Glaser, David Storm

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Low-temperature/high-resolution photoluminescence spectra of thick freestanding hydride vapor-phase epitaxial GaN substrates show intense sharp lines in the near bandedge spectral region, which has been previously assigned to recombination processes associated with the annihilation of excitons bound to neutral Si and O donors. Similar studies carried out on unintentionally doped (UID) and Si-doped homoepitaxial films grown by molecular beam epitaxy and metalorganic chemical vapor deposition methods, respectively, supports the previous identification of Si and O as the dominant shallow donors in UID GaN. The chemical nature of these background impurities and dopants were verified by high sensitivity secondary ion mass spectroscopy. The present work confirms Si and O as the pervasive dominant shallow donors in UID GaN and demonstrate the usefulness of photoluminescence as a non-destructive technique to identify impurities in GaN.

Original languageEnglish
Pages (from-to)393-398
Number of pages6
JournalJournal of Crystal Growth
Volume305
Issue number2 SPEC. ISS.
DOIs
Publication statusPublished - 2007 Jul 15

Fingerprint

Epitaxial layers
Photoluminescence
Impurities
photoluminescence
impurities
Metallorganic chemical vapor deposition
Substrates
Molecular beam epitaxy
Hydrides
Excitons
hydrides
metalorganic chemical vapor deposition
molecular beam epitaxy
mass spectroscopy
Vapors
Doping (additives)
excitons
Spectroscopy
Ions
vapor phases

Keywords

  • A1. Emission
  • A1. Impurities
  • A2. Freestanding films
  • A3. Grown from vapor
  • B1. Nitrides
  • B2. Semiconductor

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Residual impurities in GaN substrates and epitaxial layers grown by various techniques. / Murthy, Madhu; Freitas, Jaime A.; Kim, Ji Hyun; Glaser, Evan R.; Storm, David.

In: Journal of Crystal Growth, Vol. 305, No. 2 SPEC. ISS., 15.07.2007, p. 393-398.

Research output: Contribution to journalArticle

Murthy, Madhu ; Freitas, Jaime A. ; Kim, Ji Hyun ; Glaser, Evan R. ; Storm, David. / Residual impurities in GaN substrates and epitaxial layers grown by various techniques. In: Journal of Crystal Growth. 2007 ; Vol. 305, No. 2 SPEC. ISS. pp. 393-398.
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