Resistance modulation using amperian field in a two-dimensional electron gas system

Hyunjung Yi, Hyun Cheol Koo, Hi Jung Kim

Research output: Contribution to journalArticle

Abstract

In this study, we adopted a current line to produce a localized amperian field and demonstrate the resistance modulation of an InAs two-dimensional electron gas channel with the amperian field. The wafer structure is InAlAs(6 nm)/InGaAs(2.5 nm)/InAsSQW(2 nm)/InGaAs(13.5 nm)/InAlAs(20 nm). A 90-nm-thick and 3.2-μm-wide gold line, perpendicular to the mesa pattern, was adopted as a source of amperian field. Resistance changes of the mesa wherein the amperian gold line is positioned were measured with a sensing current of 20 μA. We obtained 10% of resistance change (R(IAu=10 mA)-R(IAu=0))/R(IAu=0) with the current density, JAu=3.47×106 A/cm2, which is comparable with that of the MRAM digit line. The resistance change increases with the amperian current. This result seems to be related to weak localization in the InAs 2DEG system and shows the feasibility of an amperian device to control the resistance of the InAs 2DEG system.

Original languageEnglish
Pages (from-to)1952-1954
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume310
Issue number2 SUPPL. PART 3
DOIs
Publication statusPublished - 2007 Mar 1
Externally publishedYes

Keywords

  • Amperian field
  • InAs
  • Spin FET
  • Two-dimensional electron gas
  • Weak localization

ASJC Scopus subject areas

  • Condensed Matter Physics

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