Resistance random access memory based on a thin film of CdS nanocrystals prepared via colloidal synthesis

Yong Chan Ju, Seungwook Kim, Tae Geun Seong, Sahn Nahm, Haegeun Chung, Kwon Hong, Woong Kim

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We demonstrate that resistance random access memory (RRAM) can be fabricated based on CdS-nanocrystal thin films. A simple drop-drying of the CdS-nanocrystal solution leads to the formation of uniform thin films with controlled thickness. RRAMs with a Ag/Al2O3/CdS/Pt structure show bipolar switching behavior, with average values of the set voltage (VSet) and reset voltage (VReset) of 0.15 V and -0.19 V, respectively. The RRAM characteristics are critically influenced by the thickness of the Al2O3 barrier layer, which prevents significant migration of Ag into the CdS layer as revealed by Auger electron spectroscopy (AES). Interestingly, RRAM without an Al2O3 layer (i.e., Ag/CdS/Pt structure) also shows bipolar switching behavior, but the polarity is opposite to that of RRAM with the Al2O3 layer (i.e., Ag/Al2O3/CdS/Pt structure). The operation of both kinds of devices can be explained by the conventional conductive bridging mechanism. Additionally, we fabricated RRAM devices on Kapton film for potential applications in flexible electronics, and the performance of this RRAM device was comparable to that of RRAMs fabricated on hard silicon substrates. Our results show a new possibility of using chalcogenide nanocrystals for RRAM applications. Uniform thin films of CdS nanocrystals are formed via simple drop-drying of colloidally synthesized nanocrystals. The resistance random access memory (RRAM) fabricated using these CdS nanocrystal thin films shows bipolar switching behavior with set and reset voltages of 0.15 V and -0.19 V, respectively. Our results show a new possibility of using chalcogenide nanocrystals for RRAM applications.

Original languageEnglish
Pages (from-to)2849-2855
Number of pages7
JournalSmall
Volume8
Issue number18
DOIs
Publication statusPublished - 2012 Sep 24

Fingerprint

Nanoparticles
Nanocrystals
Data storage equipment
Thin films
Equipment and Supplies
Drying
Electric potential
Silicon
Flexible electronics
Spectrum Analysis
Auger electron spectroscopy
Electrons
Substrates

Keywords

  • flexible electronics
  • nanocrystals
  • random access memory (RAM)
  • thin films

ASJC Scopus subject areas

  • Biomaterials
  • Engineering (miscellaneous)
  • Biotechnology

Cite this

Resistance random access memory based on a thin film of CdS nanocrystals prepared via colloidal synthesis. / Ju, Yong Chan; Kim, Seungwook; Seong, Tae Geun; Nahm, Sahn; Chung, Haegeun; Hong, Kwon; Kim, Woong.

In: Small, Vol. 8, No. 18, 24.09.2012, p. 2849-2855.

Research output: Contribution to journalArticle

Ju, Yong Chan ; Kim, Seungwook ; Seong, Tae Geun ; Nahm, Sahn ; Chung, Haegeun ; Hong, Kwon ; Kim, Woong. / Resistance random access memory based on a thin film of CdS nanocrystals prepared via colloidal synthesis. In: Small. 2012 ; Vol. 8, No. 18. pp. 2849-2855.
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