Resistive switching behavior in a Ni-Ag2Se-Ni nanowire

N. J. Lee, B. H. An, A. Y. Koo, H. M. Ji, J. W. Cho, Y. J. Choi, Y. K. Kim, C. J. Kang

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Hysteretic resistive switching behavior in a silver selenide (Ag 2Se) nanowire, which had a diameter of about 200 nm and a length of about 10 μm, was studied using scanning probe microscopy. Electrical current measurements were carried out in a range from 0 to -10 V and in temperatures below and above the phase transition of Ag2Se. ON/OFF switching times were measured with pulsed voltages. They displayed different characteristics at low and high temperatures. The results confirm that Ag2Se nanowires have applications in nanoscale switching devices.

Original languageEnglish
Pages (from-to)897-900
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume102
Issue number4
DOIs
Publication statusPublished - 2011 Mar

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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    Lee, N. J., An, B. H., Koo, A. Y., Ji, H. M., Cho, J. W., Choi, Y. J., Kim, Y. K., & Kang, C. J. (2011). Resistive switching behavior in a Ni-Ag2Se-Ni nanowire. Applied Physics A: Materials Science and Processing, 102(4), 897-900. https://doi.org/10.1007/s00339-011-6319-y