Resistive switching behavior in a Ni-Ag2Se-Ni nanowire

N. J. Lee; B. H. An; A. Y. Koo; H. M. Ji; J. W. Cho; Y. J. Choi; Y. K. Kim; C. J. Kang

doi:10.1007/s00339-011-6319-y

Resistive switching behavior in a Ni-Ag₂Se-Ni nanowire

N. J. Lee, B. H. An, A. Y. Koo, H. M. Ji, J. W. Cho, Y. J. Choi, Y. K. Kim, C. J. Kang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Hysteretic resistive switching behavior in a silver selenide (Ag ₂Se) nanowire, which had a diameter of about 200 nm and a length of about 10 μm, was studied using scanning probe microscopy. Electrical current measurements were carried out in a range from 0 to -10 V and in temperatures below and above the phase transition of Ag₂Se. ON/OFF switching times were measured with pulsed voltages. They displayed different characteristics at low and high temperatures. The results confirm that Ag₂Se nanowires have applications in nanoscale switching devices.

Original language	English
Pages (from-to)	897-900
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	102
Issue number	4
DOIs	https://doi.org/10.1007/s00339-011-6319-y
Publication status	Published - 2011 Mar

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)

Access to Document

10.1007/s00339-011-6319-y

Cite this

@article{4a7898fc68334a4d986b6be6f9f19084,

title = "Resistive switching behavior in a Ni-Ag2Se-Ni nanowire",

abstract = "Hysteretic resistive switching behavior in a silver selenide (Ag 2Se) nanowire, which had a diameter of about 200 nm and a length of about 10 μm, was studied using scanning probe microscopy. Electrical current measurements were carried out in a range from 0 to -10 V and in temperatures below and above the phase transition of Ag2Se. ON/OFF switching times were measured with pulsed voltages. They displayed different characteristics at low and high temperatures. The results confirm that Ag2Se nanowires have applications in nanoscale switching devices.",

author = "Lee, {N. J.} and An, {B. H.} and Koo, {A. Y.} and Ji, {H. M.} and Cho, {J. W.} and Choi, {Y. J.} and Kim, {Y. K.} and Kang, {C. J.}",

year = "2011",

month = mar,

doi = "10.1007/s00339-011-6319-y",

language = "English",

volume = "102",

pages = "897--900",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

number = "4",

}

TY - JOUR

T1 - Resistive switching behavior in a Ni-Ag2Se-Ni nanowire

AU - Lee, N. J.

AU - An, B. H.

AU - Koo, A. Y.

AU - Ji, H. M.

AU - Cho, J. W.

AU - Choi, Y. J.

AU - Kim, Y. K.

AU - Kang, C. J.

PY - 2011/3

Y1 - 2011/3

N2 - Hysteretic resistive switching behavior in a silver selenide (Ag 2Se) nanowire, which had a diameter of about 200 nm and a length of about 10 μm, was studied using scanning probe microscopy. Electrical current measurements were carried out in a range from 0 to -10 V and in temperatures below and above the phase transition of Ag2Se. ON/OFF switching times were measured with pulsed voltages. They displayed different characteristics at low and high temperatures. The results confirm that Ag2Se nanowires have applications in nanoscale switching devices.

AB - Hysteretic resistive switching behavior in a silver selenide (Ag 2Se) nanowire, which had a diameter of about 200 nm and a length of about 10 μm, was studied using scanning probe microscopy. Electrical current measurements were carried out in a range from 0 to -10 V and in temperatures below and above the phase transition of Ag2Se. ON/OFF switching times were measured with pulsed voltages. They displayed different characteristics at low and high temperatures. The results confirm that Ag2Se nanowires have applications in nanoscale switching devices.

UR - http://www.scopus.com/inward/record.url?scp=79959362806&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79959362806&partnerID=8YFLogxK

U2 - 10.1007/s00339-011-6319-y

DO - 10.1007/s00339-011-6319-y

M3 - Article

AN - SCOPUS:79959362806

SN - 0947-8396

VL - 102

SP - 897

EP - 900

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 4

ER -

Resistive switching behavior in a Ni-Ag₂Se-Ni nanowire

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this