Abstract
In this paper, the resistive-switching behavior of Si 3N 4 films using nitride-related traps in Ti/Si 3N 4/Ti memory cells is reported. Bipolar resistive switching behavior was clearly observed at a low voltage of about ±2.5 V. Compared to Au/Si 3N 4/Ti memory cells, the set and reset current of Ti/Si 3N 4/Ti memory cells was decreased from 5 μA and 1.5 mA to 40 nA and 1 μA, respectively, at V read = 0.1 V. In addition, Ti/Si 3N 4/Ti memory cells showed improved endurance characteristics over 2.7 × 10 3 cycles.
Original language | English |
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Pages (from-to) | 351-354 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 98 |
DOIs | |
Publication status | Published - 2012 Oct |
Keywords
- Resistive switching memory
- Si N
- Space charge limited current
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering