Abstract
In this paper, the resistive-switching behavior of Si 3N 4 films using nitride-related traps in Ti/Si 3N 4/Ti memory cells is reported. Bipolar resistive switching behavior was clearly observed at a low voltage of about ±2.5 V. Compared to Au/Si 3N 4/Ti memory cells, the set and reset current of Ti/Si 3N 4/Ti memory cells was decreased from 5 μA and 1.5 mA to 40 nA and 1 μA, respectively, at V read = 0.1 V. In addition, Ti/Si 3N 4/Ti memory cells showed improved endurance characteristics over 2.7 × 10 3 cycles.
| Original language | English |
|---|---|
| Pages (from-to) | 351-354 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 98 |
| DOIs | |
| Publication status | Published - 2012 Oct 1 |
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Keywords
- Resistive switching memory
- Si N
- Space charge limited current
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
Cite this
Resistive-switching behavior in Ti/Si 3N 4/Ti memory structures for ReRAM applications. / Kim, Hee Dong; An, Ho Myoung; Kim, Tae Geun.
In: Microelectronic Engineering, Vol. 98, 01.10.2012, p. 351-354.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Resistive-switching behavior in Ti/Si 3N 4/Ti memory structures for ReRAM applications
AU - Kim, Hee Dong
AU - An, Ho Myoung
AU - Kim, Tae Geun
PY - 2012/10/1
Y1 - 2012/10/1
N2 - In this paper, the resistive-switching behavior of Si 3N 4 films using nitride-related traps in Ti/Si 3N 4/Ti memory cells is reported. Bipolar resistive switching behavior was clearly observed at a low voltage of about ±2.5 V. Compared to Au/Si 3N 4/Ti memory cells, the set and reset current of Ti/Si 3N 4/Ti memory cells was decreased from 5 μA and 1.5 mA to 40 nA and 1 μA, respectively, at V read = 0.1 V. In addition, Ti/Si 3N 4/Ti memory cells showed improved endurance characteristics over 2.7 × 10 3 cycles.
AB - In this paper, the resistive-switching behavior of Si 3N 4 films using nitride-related traps in Ti/Si 3N 4/Ti memory cells is reported. Bipolar resistive switching behavior was clearly observed at a low voltage of about ±2.5 V. Compared to Au/Si 3N 4/Ti memory cells, the set and reset current of Ti/Si 3N 4/Ti memory cells was decreased from 5 μA and 1.5 mA to 40 nA and 1 μA, respectively, at V read = 0.1 V. In addition, Ti/Si 3N 4/Ti memory cells showed improved endurance characteristics over 2.7 × 10 3 cycles.
KW - Resistive switching memory
KW - Si N
KW - Space charge limited current
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UR - http://www.scopus.com/inward/citedby.url?scp=84865601056&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2012.07.052
DO - 10.1016/j.mee.2012.07.052
M3 - Article
VL - 98
SP - 351
EP - 354
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -