Resistive-switching behavior in Ti/Si 3N 4/Ti memory structures for ReRAM applications

Hee Dong Kim, Ho Myoung An, Tae Geun Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

In this paper, the resistive-switching behavior of Si 3N 4 films using nitride-related traps in Ti/Si 3N 4/Ti memory cells is reported. Bipolar resistive switching behavior was clearly observed at a low voltage of about ±2.5 V. Compared to Au/Si 3N 4/Ti memory cells, the set and reset current of Ti/Si 3N 4/Ti memory cells was decreased from 5 μA and 1.5 mA to 40 nA and 1 μA, respectively, at V read = 0.1 V. In addition, Ti/Si 3N 4/Ti memory cells showed improved endurance characteristics over 2.7 × 10 3 cycles.

Original languageEnglish
Pages (from-to)351-354
Number of pages4
JournalMicroelectronic Engineering
Volume98
DOIs
Publication statusPublished - 2012 Oct 1

Fingerprint

Data storage equipment
cells
endurance
Nitrides
low voltage
nitrides
Durability
traps
cycles
RRAM
Electric potential

Keywords

  • Resistive switching memory
  • Si N
  • Space charge limited current

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Resistive-switching behavior in Ti/Si 3N 4/Ti memory structures for ReRAM applications. / Kim, Hee Dong; An, Ho Myoung; Kim, Tae Geun.

In: Microelectronic Engineering, Vol. 98, 01.10.2012, p. 351-354.

Research output: Contribution to journalArticle

@article{aa97bcfd8f22452384fd966cff1fd8e3,
title = "Resistive-switching behavior in Ti/Si 3N 4/Ti memory structures for ReRAM applications",
abstract = "In this paper, the resistive-switching behavior of Si 3N 4 films using nitride-related traps in Ti/Si 3N 4/Ti memory cells is reported. Bipolar resistive switching behavior was clearly observed at a low voltage of about ±2.5 V. Compared to Au/Si 3N 4/Ti memory cells, the set and reset current of Ti/Si 3N 4/Ti memory cells was decreased from 5 μA and 1.5 mA to 40 nA and 1 μA, respectively, at V read = 0.1 V. In addition, Ti/Si 3N 4/Ti memory cells showed improved endurance characteristics over 2.7 × 10 3 cycles.",
keywords = "Resistive switching memory, Si N, Space charge limited current",
author = "Kim, {Hee Dong} and An, {Ho Myoung} and Kim, {Tae Geun}",
year = "2012",
month = "10",
day = "1",
doi = "10.1016/j.mee.2012.07.052",
language = "English",
volume = "98",
pages = "351--354",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

TY - JOUR

T1 - Resistive-switching behavior in Ti/Si 3N 4/Ti memory structures for ReRAM applications

AU - Kim, Hee Dong

AU - An, Ho Myoung

AU - Kim, Tae Geun

PY - 2012/10/1

Y1 - 2012/10/1

N2 - In this paper, the resistive-switching behavior of Si 3N 4 films using nitride-related traps in Ti/Si 3N 4/Ti memory cells is reported. Bipolar resistive switching behavior was clearly observed at a low voltage of about ±2.5 V. Compared to Au/Si 3N 4/Ti memory cells, the set and reset current of Ti/Si 3N 4/Ti memory cells was decreased from 5 μA and 1.5 mA to 40 nA and 1 μA, respectively, at V read = 0.1 V. In addition, Ti/Si 3N 4/Ti memory cells showed improved endurance characteristics over 2.7 × 10 3 cycles.

AB - In this paper, the resistive-switching behavior of Si 3N 4 films using nitride-related traps in Ti/Si 3N 4/Ti memory cells is reported. Bipolar resistive switching behavior was clearly observed at a low voltage of about ±2.5 V. Compared to Au/Si 3N 4/Ti memory cells, the set and reset current of Ti/Si 3N 4/Ti memory cells was decreased from 5 μA and 1.5 mA to 40 nA and 1 μA, respectively, at V read = 0.1 V. In addition, Ti/Si 3N 4/Ti memory cells showed improved endurance characteristics over 2.7 × 10 3 cycles.

KW - Resistive switching memory

KW - Si N

KW - Space charge limited current

UR - http://www.scopus.com/inward/record.url?scp=84865601056&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84865601056&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2012.07.052

DO - 10.1016/j.mee.2012.07.052

M3 - Article

VL - 98

SP - 351

EP - 354

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -