Resistive-switching behavior in Ti/Si 3N 4/Ti memory structures for ReRAM applications

Hee Dong Kim; Ho Myoung An; Tae Geun Kim

doi:10.1016/j.mee.2012.07.052

Resistive-switching behavior in Ti/Si ₃N ₄/Ti memory structures for ReRAM applications

Hee Dong Kim, Ho Myoung An, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

In this paper, the resistive-switching behavior of Si ₃N ₄ films using nitride-related traps in Ti/Si ₃N ₄/Ti memory cells is reported. Bipolar resistive switching behavior was clearly observed at a low voltage of about ±2.5 V. Compared to Au/Si ₃N ₄/Ti memory cells, the set and reset current of Ti/Si ₃N ₄/Ti memory cells was decreased from 5 μA and 1.5 mA to 40 nA and 1 μA, respectively, at V _read = 0.1 V. In addition, Ti/Si ₃N ₄/Ti memory cells showed improved endurance characteristics over 2.7 × 10 ³ cycles.

Original language	English
Pages (from-to)	351-354
Number of pages	4
Journal	Microelectronic Engineering
Volume	98
DOIs	https://doi.org/10.1016/j.mee.2012.07.052
Publication status	Published - 2012 Oct

Keywords

Resistive switching memory
Si N
Space charge limited current

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2012.07.052

Cite this

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title = "Resistive-switching behavior in Ti/Si 3N 4/Ti memory structures for ReRAM applications",

abstract = "In this paper, the resistive-switching behavior of Si 3N 4 films using nitride-related traps in Ti/Si 3N 4/Ti memory cells is reported. Bipolar resistive switching behavior was clearly observed at a low voltage of about ±2.5 V. Compared to Au/Si 3N 4/Ti memory cells, the set and reset current of Ti/Si 3N 4/Ti memory cells was decreased from 5 μA and 1.5 mA to 40 nA and 1 μA, respectively, at V read = 0.1 V. In addition, Ti/Si 3N 4/Ti memory cells showed improved endurance characteristics over 2.7 × 10 3 cycles.",

keywords = "Resistive switching memory, Si N, Space charge limited current",

author = "Kim, {Hee Dong} and An, {Ho Myoung} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported by the Seoul R&BD Program (No. ST100024 ) as well as the Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) (No. 2010-00218 ).",

year = "2012",

month = oct,

doi = "10.1016/j.mee.2012.07.052",

language = "English",

volume = "98",

pages = "351--354",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

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T1 - Resistive-switching behavior in Ti/Si 3N 4/Ti memory structures for ReRAM applications

AU - Kim, Hee Dong

AU - An, Ho Myoung

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported by the Seoul R&BD Program (No. ST100024 ) as well as the Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) (No. 2010-00218 ).

PY - 2012/10

Y1 - 2012/10

N2 - In this paper, the resistive-switching behavior of Si 3N 4 films using nitride-related traps in Ti/Si 3N 4/Ti memory cells is reported. Bipolar resistive switching behavior was clearly observed at a low voltage of about ±2.5 V. Compared to Au/Si 3N 4/Ti memory cells, the set and reset current of Ti/Si 3N 4/Ti memory cells was decreased from 5 μA and 1.5 mA to 40 nA and 1 μA, respectively, at V read = 0.1 V. In addition, Ti/Si 3N 4/Ti memory cells showed improved endurance characteristics over 2.7 × 10 3 cycles.

AB - In this paper, the resistive-switching behavior of Si 3N 4 films using nitride-related traps in Ti/Si 3N 4/Ti memory cells is reported. Bipolar resistive switching behavior was clearly observed at a low voltage of about ±2.5 V. Compared to Au/Si 3N 4/Ti memory cells, the set and reset current of Ti/Si 3N 4/Ti memory cells was decreased from 5 μA and 1.5 mA to 40 nA and 1 μA, respectively, at V read = 0.1 V. In addition, Ti/Si 3N 4/Ti memory cells showed improved endurance characteristics over 2.7 × 10 3 cycles.

KW - Resistive switching memory

KW - Si N

KW - Space charge limited current

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