Abstract
In this study, we have investigated the resistive switching behavior of multi-stacked PVA/GO + PVA composite/PVA insulating layer-based RRAM (resistive random-access memory) as the annealing temperature of the insulating layer was varied between 100 °C, 150 °C, and 200 °C. The fabricated RRAM device with a multi-stacked insulating layer annealed at 200 °C showed relatively good switching properties with a high on/off ratio (∼104) and low V SET (3.5 0.29 V) and V RESET (-1.81 0.10 V), which were uniformly distributed over 100 DC sweep cycles. In terms of reliability, multi-stacked insulating layer-based RRAM devices exhibited good retention (>2 ×103 s) and DC sweep endurance (>80) due to the enhanced stability of the insulating layer by good dispersion and the thermal treatment. The conduction mechanisms of the device at low resistance state (LRS) and high resistance state (HRS) were analyzed through Ohmic conduction LRS and Poole-Frenkel emission of HRS, respectively. In addition, we demonstrated the filamentary switching mechanism of resistive switching in our proposed devices.
| Original language | English |
|---|---|
| Article number | 065006 |
| Journal | Semiconductor Science and Technology |
| Volume | 34 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2019 May 8 |
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Keywords
- filamentary switching
- graphene oxide
- PVA
- resistive random access memory
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Resistive switching behaviour of multi-stacked PVA/graphene oxide + PVA composite/PVA insulating layer-based RRAM devices. / Kim, Taeheon; Kim, Dong Kyun; Kim, Jongtae; Pak, James Jungho.
In: Semiconductor Science and Technology, Vol. 34, No. 6, 065006, 08.05.2019.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Resistive switching behaviour of multi-stacked PVA/graphene oxide + PVA composite/PVA insulating layer-based RRAM devices
AU - Kim, Taeheon
AU - Kim, Dong Kyun
AU - Kim, Jongtae
AU - Pak, James Jungho
PY - 2019/5/8
Y1 - 2019/5/8
N2 - In this study, we have investigated the resistive switching behavior of multi-stacked PVA/GO + PVA composite/PVA insulating layer-based RRAM (resistive random-access memory) as the annealing temperature of the insulating layer was varied between 100 °C, 150 °C, and 200 °C. The fabricated RRAM device with a multi-stacked insulating layer annealed at 200 °C showed relatively good switching properties with a high on/off ratio (∼104) and low V SET (3.5 0.29 V) and V RESET (-1.81 0.10 V), which were uniformly distributed over 100 DC sweep cycles. In terms of reliability, multi-stacked insulating layer-based RRAM devices exhibited good retention (>2 ×103 s) and DC sweep endurance (>80) due to the enhanced stability of the insulating layer by good dispersion and the thermal treatment. The conduction mechanisms of the device at low resistance state (LRS) and high resistance state (HRS) were analyzed through Ohmic conduction LRS and Poole-Frenkel emission of HRS, respectively. In addition, we demonstrated the filamentary switching mechanism of resistive switching in our proposed devices.
AB - In this study, we have investigated the resistive switching behavior of multi-stacked PVA/GO + PVA composite/PVA insulating layer-based RRAM (resistive random-access memory) as the annealing temperature of the insulating layer was varied between 100 °C, 150 °C, and 200 °C. The fabricated RRAM device with a multi-stacked insulating layer annealed at 200 °C showed relatively good switching properties with a high on/off ratio (∼104) and low V SET (3.5 0.29 V) and V RESET (-1.81 0.10 V), which were uniformly distributed over 100 DC sweep cycles. In terms of reliability, multi-stacked insulating layer-based RRAM devices exhibited good retention (>2 ×103 s) and DC sweep endurance (>80) due to the enhanced stability of the insulating layer by good dispersion and the thermal treatment. The conduction mechanisms of the device at low resistance state (LRS) and high resistance state (HRS) were analyzed through Ohmic conduction LRS and Poole-Frenkel emission of HRS, respectively. In addition, we demonstrated the filamentary switching mechanism of resistive switching in our proposed devices.
KW - filamentary switching
KW - graphene oxide
KW - PVA
KW - resistive random access memory
UR - http://www.scopus.com/inward/record.url?scp=85068446176&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85068446176&partnerID=8YFLogxK
U2 - 10.1088/1361-6641/ab1403
DO - 10.1088/1361-6641/ab1403
M3 - Article
AN - SCOPUS:85068446176
VL - 34
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 6
M1 - 065006
ER -