Resistive switching behaviour of multi-stacked PVA/graphene oxide + PVA composite/PVA insulating layer-based RRAM devices

Taeheon Kim, Dong Kyun Kim, Jongtae Kim, James Jungho Pak

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, we have investigated the resistive switching behavior of multi-stacked PVA/GO + PVA composite/PVA insulating layer-based RRAM (resistive random-access memory) as the annealing temperature of the insulating layer was varied between 100 °C, 150 °C, and 200 °C. The fabricated RRAM device with a multi-stacked insulating layer annealed at 200 °C showed relatively good switching properties with a high on/off ratio (∼104) and low V SET (3.5 0.29 V) and V RESET (-1.81 0.10 V), which were uniformly distributed over 100 DC sweep cycles. In terms of reliability, multi-stacked insulating layer-based RRAM devices exhibited good retention (>2 ×103 s) and DC sweep endurance (>80) due to the enhanced stability of the insulating layer by good dispersion and the thermal treatment. The conduction mechanisms of the device at low resistance state (LRS) and high resistance state (HRS) were analyzed through Ohmic conduction LRS and Poole-Frenkel emission of HRS, respectively. In addition, we demonstrated the filamentary switching mechanism of resistive switching in our proposed devices.

Original languageEnglish
Article number065006
JournalSemiconductor Science and Technology
Volume34
Issue number6
DOIs
Publication statusPublished - 2019 May 8

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random access memory
Oxides
Graphene
graphene
Data storage equipment
composite materials
oxides
Composite materials
low resistance
high resistance
direct current
conduction
endurance
Durability
Heat treatment
Annealing
cycles
annealing
Temperature

Keywords

  • filamentary switching
  • graphene oxide
  • PVA
  • resistive random access memory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Resistive switching behaviour of multi-stacked PVA/graphene oxide + PVA composite/PVA insulating layer-based RRAM devices. / Kim, Taeheon; Kim, Dong Kyun; Kim, Jongtae; Pak, James Jungho.

In: Semiconductor Science and Technology, Vol. 34, No. 6, 065006, 08.05.2019.

Research output: Contribution to journalArticle

@article{9c1352e1efba418ba164ce1d32a42522,
title = "Resistive switching behaviour of multi-stacked PVA/graphene oxide + PVA composite/PVA insulating layer-based RRAM devices",
abstract = "In this study, we have investigated the resistive switching behavior of multi-stacked PVA/GO + PVA composite/PVA insulating layer-based RRAM (resistive random-access memory) as the annealing temperature of the insulating layer was varied between 100 °C, 150 °C, and 200 °C. The fabricated RRAM device with a multi-stacked insulating layer annealed at 200 °C showed relatively good switching properties with a high on/off ratio (∼104) and low V SET (3.5 0.29 V) and V RESET (-1.81 0.10 V), which were uniformly distributed over 100 DC sweep cycles. In terms of reliability, multi-stacked insulating layer-based RRAM devices exhibited good retention (>2 ×103 s) and DC sweep endurance (>80) due to the enhanced stability of the insulating layer by good dispersion and the thermal treatment. The conduction mechanisms of the device at low resistance state (LRS) and high resistance state (HRS) were analyzed through Ohmic conduction LRS and Poole-Frenkel emission of HRS, respectively. In addition, we demonstrated the filamentary switching mechanism of resistive switching in our proposed devices.",
keywords = "filamentary switching, graphene oxide, PVA, resistive random access memory",
author = "Taeheon Kim and Kim, {Dong Kyun} and Jongtae Kim and Pak, {James Jungho}",
year = "2019",
month = "5",
day = "8",
doi = "10.1088/1361-6641/ab1403",
language = "English",
volume = "34",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "6",

}

TY - JOUR

T1 - Resistive switching behaviour of multi-stacked PVA/graphene oxide + PVA composite/PVA insulating layer-based RRAM devices

AU - Kim, Taeheon

AU - Kim, Dong Kyun

AU - Kim, Jongtae

AU - Pak, James Jungho

PY - 2019/5/8

Y1 - 2019/5/8

N2 - In this study, we have investigated the resistive switching behavior of multi-stacked PVA/GO + PVA composite/PVA insulating layer-based RRAM (resistive random-access memory) as the annealing temperature of the insulating layer was varied between 100 °C, 150 °C, and 200 °C. The fabricated RRAM device with a multi-stacked insulating layer annealed at 200 °C showed relatively good switching properties with a high on/off ratio (∼104) and low V SET (3.5 0.29 V) and V RESET (-1.81 0.10 V), which were uniformly distributed over 100 DC sweep cycles. In terms of reliability, multi-stacked insulating layer-based RRAM devices exhibited good retention (>2 ×103 s) and DC sweep endurance (>80) due to the enhanced stability of the insulating layer by good dispersion and the thermal treatment. The conduction mechanisms of the device at low resistance state (LRS) and high resistance state (HRS) were analyzed through Ohmic conduction LRS and Poole-Frenkel emission of HRS, respectively. In addition, we demonstrated the filamentary switching mechanism of resistive switching in our proposed devices.

AB - In this study, we have investigated the resistive switching behavior of multi-stacked PVA/GO + PVA composite/PVA insulating layer-based RRAM (resistive random-access memory) as the annealing temperature of the insulating layer was varied between 100 °C, 150 °C, and 200 °C. The fabricated RRAM device with a multi-stacked insulating layer annealed at 200 °C showed relatively good switching properties with a high on/off ratio (∼104) and low V SET (3.5 0.29 V) and V RESET (-1.81 0.10 V), which were uniformly distributed over 100 DC sweep cycles. In terms of reliability, multi-stacked insulating layer-based RRAM devices exhibited good retention (>2 ×103 s) and DC sweep endurance (>80) due to the enhanced stability of the insulating layer by good dispersion and the thermal treatment. The conduction mechanisms of the device at low resistance state (LRS) and high resistance state (HRS) were analyzed through Ohmic conduction LRS and Poole-Frenkel emission of HRS, respectively. In addition, we demonstrated the filamentary switching mechanism of resistive switching in our proposed devices.

KW - filamentary switching

KW - graphene oxide

KW - PVA

KW - resistive random access memory

UR - http://www.scopus.com/inward/record.url?scp=85068446176&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85068446176&partnerID=8YFLogxK

U2 - 10.1088/1361-6641/ab1403

DO - 10.1088/1361-6641/ab1403

M3 - Article

AN - SCOPUS:85068446176

VL - 34

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 6

M1 - 065006

ER -