Resistive switching characteristics of HfO2-based memory devices on flexible plastics

Yong Han, Kyoungah Cho, Sukhyung Park, Sangsig Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this study, we examine the characteristics of HfO2-based resistive switching random access memory (ReRAM) devices on flexible plastics. The Pt/HfO2/Au ReRAM devices exhibit the unipolar resistive switching behaviors caused by the conducting filaments. From the Auger depth profiles of the HfO2 thin film, it is confirmed that the relatively lower oxygen content in the interface of the bottom electrode is responsible for the resistive switching by oxygen vacancies. And the unipolar resistive switching behaviors are analyzed from the C-V characteristics in which negative and positive capacitances are measured in the low-resistance state and the high-resistance state, respectively. The devices have a high on/off ratio of 104 and the excellent retention properties even after a continuous bending test of two thousand cycles. The correlation between the device size and the memory characteristics is investigated as well. A relatively smaller-sized device having a higher on/off ratio operates at a higher voltage than a relatively larger-sized device.

Original languageEnglish
Pages (from-to)8191-8195
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume14
Issue number11
DOIs
Publication statusPublished - 2014 Nov 1

Fingerprint

Plastics
plastics
Data storage equipment
Equipment and Supplies
random access memory
Oxygen
Bending tests
Oxygen vacancies
low resistance
high resistance
oxygen
Capacitance
high voltages
filaments
Electrodes
Thin films
capacitance
Electric potential
conduction
cycles

Keywords

  • Flexible device
  • Oxide
  • Resistive switching memory

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Resistive switching characteristics of HfO2-based memory devices on flexible plastics. / Han, Yong; Cho, Kyoungah; Park, Sukhyung; Kim, Sangsig.

In: Journal of Nanoscience and Nanotechnology, Vol. 14, No. 11, 01.11.2014, p. 8191-8195.

Research output: Contribution to journalArticle

@article{aca6ff68b9e647f3927e49af59cfa8b1,
title = "Resistive switching characteristics of HfO2-based memory devices on flexible plastics",
abstract = "In this study, we examine the characteristics of HfO2-based resistive switching random access memory (ReRAM) devices on flexible plastics. The Pt/HfO2/Au ReRAM devices exhibit the unipolar resistive switching behaviors caused by the conducting filaments. From the Auger depth profiles of the HfO2 thin film, it is confirmed that the relatively lower oxygen content in the interface of the bottom electrode is responsible for the resistive switching by oxygen vacancies. And the unipolar resistive switching behaviors are analyzed from the C-V characteristics in which negative and positive capacitances are measured in the low-resistance state and the high-resistance state, respectively. The devices have a high on/off ratio of 104 and the excellent retention properties even after a continuous bending test of two thousand cycles. The correlation between the device size and the memory characteristics is investigated as well. A relatively smaller-sized device having a higher on/off ratio operates at a higher voltage than a relatively larger-sized device.",
keywords = "Flexible device, Oxide, Resistive switching memory",
author = "Yong Han and Kyoungah Cho and Sukhyung Park and Sangsig Kim",
year = "2014",
month = "11",
day = "1",
doi = "10.1166/jnn.2014.9879",
language = "English",
volume = "14",
pages = "8191--8195",
journal = "Journal of Nanoscience and Nanotechnology",
issn = "1533-4880",
publisher = "American Scientific Publishers",
number = "11",

}

TY - JOUR

T1 - Resistive switching characteristics of HfO2-based memory devices on flexible plastics

AU - Han, Yong

AU - Cho, Kyoungah

AU - Park, Sukhyung

AU - Kim, Sangsig

PY - 2014/11/1

Y1 - 2014/11/1

N2 - In this study, we examine the characteristics of HfO2-based resistive switching random access memory (ReRAM) devices on flexible plastics. The Pt/HfO2/Au ReRAM devices exhibit the unipolar resistive switching behaviors caused by the conducting filaments. From the Auger depth profiles of the HfO2 thin film, it is confirmed that the relatively lower oxygen content in the interface of the bottom electrode is responsible for the resistive switching by oxygen vacancies. And the unipolar resistive switching behaviors are analyzed from the C-V characteristics in which negative and positive capacitances are measured in the low-resistance state and the high-resistance state, respectively. The devices have a high on/off ratio of 104 and the excellent retention properties even after a continuous bending test of two thousand cycles. The correlation between the device size and the memory characteristics is investigated as well. A relatively smaller-sized device having a higher on/off ratio operates at a higher voltage than a relatively larger-sized device.

AB - In this study, we examine the characteristics of HfO2-based resistive switching random access memory (ReRAM) devices on flexible plastics. The Pt/HfO2/Au ReRAM devices exhibit the unipolar resistive switching behaviors caused by the conducting filaments. From the Auger depth profiles of the HfO2 thin film, it is confirmed that the relatively lower oxygen content in the interface of the bottom electrode is responsible for the resistive switching by oxygen vacancies. And the unipolar resistive switching behaviors are analyzed from the C-V characteristics in which negative and positive capacitances are measured in the low-resistance state and the high-resistance state, respectively. The devices have a high on/off ratio of 104 and the excellent retention properties even after a continuous bending test of two thousand cycles. The correlation between the device size and the memory characteristics is investigated as well. A relatively smaller-sized device having a higher on/off ratio operates at a higher voltage than a relatively larger-sized device.

KW - Flexible device

KW - Oxide

KW - Resistive switching memory

UR - http://www.scopus.com/inward/record.url?scp=84908439536&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84908439536&partnerID=8YFLogxK

U2 - 10.1166/jnn.2014.9879

DO - 10.1166/jnn.2014.9879

M3 - Article

AN - SCOPUS:84908439536

VL - 14

SP - 8191

EP - 8195

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 11

ER -