Resistive switching characteristics of HfO2-based memory devices on flexible plastics

Yong Han, Kyoungah Cho, Sukhyung Park, Sangsig Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this study, we examine the characteristics of HfO2-based resistive switching random access memory (ReRAM) devices on flexible plastics. The Pt/HfO2/Au ReRAM devices exhibit the unipolar resistive switching behaviors caused by the conducting filaments. From the Auger depth profiles of the HfO2 thin film, it is confirmed that the relatively lower oxygen content in the interface of the bottom electrode is responsible for the resistive switching by oxygen vacancies. And the unipolar resistive switching behaviors are analyzed from the C-V characteristics in which negative and positive capacitances are measured in the low-resistance state and the high-resistance state, respectively. The devices have a high on/off ratio of 104 and the excellent retention properties even after a continuous bending test of two thousand cycles. The correlation between the device size and the memory characteristics is investigated as well. A relatively smaller-sized device having a higher on/off ratio operates at a higher voltage than a relatively larger-sized device.

Original languageEnglish
Pages (from-to)8191-8195
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume14
Issue number11
DOIs
Publication statusPublished - 2014 Nov 1

Keywords

  • Flexible device
  • Oxide
  • Resistive switching memory

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

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