Resistive switching characteristics of polycrystalline SrTiO3 films

Hyung Jong Choi, Suk Won Park, Gwon Deok Han, Junhong Na, Gyu-Tae Kim, Joon Hyung Shim

Research output: Contribution to journalArticle

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Abstract

Strontium titanate (STO) thin films 90 nm in thickness were grown on a Pt substrate through atomic layer deposition (ALD). The as-deposited ALD STO grown with an ALD cycle ratio of 1:1 (Sr:Ti) was in an amorphous phase, and annealing at 800 °C in air crystallized the films into the perovskite phase. This phase change was confirmed by x-ray diffraction and transmission electron microscopy. The as-deposited ALD STO exhibited no discernible switching mechanism, whereas unipolar switching behavior was reproducibly observed with a high resistance ratio (108-109) and strict separation of the set/reset voltages and currents in the annealed ALD STO. Mechanisms for charge transport in both the low- and high-resistance states and for resistive switching in the annealed ALD STO are also proposed.

Original languageEnglish
Article number4883646
JournalApplied Physics Letters
Volume104
Issue number24
DOIs
Publication statusPublished - 2014 Jun 16

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atomic layer epitaxy
strontium
high resistance
low resistance
x ray diffraction
transmission electron microscopy
cycles
annealing
air
electric potential
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Resistive switching characteristics of polycrystalline SrTiO3 films. / Jong Choi, Hyung; Won Park, Suk; Deok Han, Gwon; Na, Junhong; Kim, Gyu-Tae; Shim, Joon Hyung.

In: Applied Physics Letters, Vol. 104, No. 24, 4883646, 16.06.2014.

Research output: Contribution to journalArticle

Jong Choi, Hyung ; Won Park, Suk ; Deok Han, Gwon ; Na, Junhong ; Kim, Gyu-Tae ; Shim, Joon Hyung. / Resistive switching characteristics of polycrystalline SrTiO3 films. In: Applied Physics Letters. 2014 ; Vol. 104, No. 24.
@article{69e4b00196784f7aa4888ba108d81774,
title = "Resistive switching characteristics of polycrystalline SrTiO3 films",
abstract = "Strontium titanate (STO) thin films 90 nm in thickness were grown on a Pt substrate through atomic layer deposition (ALD). The as-deposited ALD STO grown with an ALD cycle ratio of 1:1 (Sr:Ti) was in an amorphous phase, and annealing at 800 °C in air crystallized the films into the perovskite phase. This phase change was confirmed by x-ray diffraction and transmission electron microscopy. The as-deposited ALD STO exhibited no discernible switching mechanism, whereas unipolar switching behavior was reproducibly observed with a high resistance ratio (108-109) and strict separation of the set/reset voltages and currents in the annealed ALD STO. Mechanisms for charge transport in both the low- and high-resistance states and for resistive switching in the annealed ALD STO are also proposed.",
author = "{Jong Choi}, Hyung and {Won Park}, Suk and {Deok Han}, Gwon and Junhong Na and Gyu-Tae Kim and Shim, {Joon Hyung}",
year = "2014",
month = "6",
day = "16",
doi = "10.1063/1.4883646",
language = "English",
volume = "104",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "24",

}

TY - JOUR

T1 - Resistive switching characteristics of polycrystalline SrTiO3 films

AU - Jong Choi, Hyung

AU - Won Park, Suk

AU - Deok Han, Gwon

AU - Na, Junhong

AU - Kim, Gyu-Tae

AU - Shim, Joon Hyung

PY - 2014/6/16

Y1 - 2014/6/16

N2 - Strontium titanate (STO) thin films 90 nm in thickness were grown on a Pt substrate through atomic layer deposition (ALD). The as-deposited ALD STO grown with an ALD cycle ratio of 1:1 (Sr:Ti) was in an amorphous phase, and annealing at 800 °C in air crystallized the films into the perovskite phase. This phase change was confirmed by x-ray diffraction and transmission electron microscopy. The as-deposited ALD STO exhibited no discernible switching mechanism, whereas unipolar switching behavior was reproducibly observed with a high resistance ratio (108-109) and strict separation of the set/reset voltages and currents in the annealed ALD STO. Mechanisms for charge transport in both the low- and high-resistance states and for resistive switching in the annealed ALD STO are also proposed.

AB - Strontium titanate (STO) thin films 90 nm in thickness were grown on a Pt substrate through atomic layer deposition (ALD). The as-deposited ALD STO grown with an ALD cycle ratio of 1:1 (Sr:Ti) was in an amorphous phase, and annealing at 800 °C in air crystallized the films into the perovskite phase. This phase change was confirmed by x-ray diffraction and transmission electron microscopy. The as-deposited ALD STO exhibited no discernible switching mechanism, whereas unipolar switching behavior was reproducibly observed with a high resistance ratio (108-109) and strict separation of the set/reset voltages and currents in the annealed ALD STO. Mechanisms for charge transport in both the low- and high-resistance states and for resistive switching in the annealed ALD STO are also proposed.

UR - http://www.scopus.com/inward/record.url?scp=84903211254&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903211254&partnerID=8YFLogxK

U2 - 10.1063/1.4883646

DO - 10.1063/1.4883646

M3 - Article

AN - SCOPUS:84903211254

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

M1 - 4883646

ER -