Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure

Tae Wook Kim, Hyejung Choi, Seung Hwan Oh, Minseok Jo, Gunuk Wang, Byungjin Cho, Dong Yu Kim, Hyunsang Hwang, Takhee Lee

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

The resistive switching characteristics of polyfluorene-derivative polymer material in a sub-micron scale via-hole device structure were investigated. The scalable via-hole sub-microstructure was fabricated using an e-beam lithographic technique. The polymer non-volatile memory devices varied in size from 40 × 40 νm2 to 200 × 200 nm2. From the scaling of junction size, the memory mechanism can be attributed to the space-charge-limited current with filamentary conduction. Sub-micron scale polymer memory devices showed excellent resistive switching behaviours such as a large ON/OFF ratio (ION/IOFF∼104), excellent device-to-device switching uniformity, good sweep endurance, and good retention times (more than 10 000 s). The successful operation of sub-micron scale memory devices of our polyfluorene-derivative polymer shows promise to fabricate high-density polymer memory devices.

Original languageEnglish
Article number025201
JournalNanotechnology
Volume20
Issue number2
DOIs
Publication statusPublished - 2009 Jan 14

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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