Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure

Tae Wook Kim; Hyejung Choi; Seung Hwan Oh; Minseok Jo; Gunuk Wang; Byungjin Cho; Dong Yu Kim; Hyunsang Hwang; Takhee Lee

doi:10.1088/0957-4484/20/2/025201

Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure

Tae Wook Kim, Hyejung Choi, Seung Hwan Oh, Minseok Jo, Gunuk Wang, Byungjin Cho, Dong Yu Kim, Hyunsang Hwang, Takhee Lee

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

The resistive switching characteristics of polyfluorene-derivative polymer material in a sub-micron scale via-hole device structure were investigated. The scalable via-hole sub-microstructure was fabricated using an e-beam lithographic technique. The polymer non-volatile memory devices varied in size from 40 × 40 νm² to 200 × 200 nm². From the scaling of junction size, the memory mechanism can be attributed to the space-charge-limited current with filamentary conduction. Sub-micron scale polymer memory devices showed excellent resistive switching behaviours such as a large ON/OFF ratio (I_ON/I_OFF∼10⁴), excellent device-to-device switching uniformity, good sweep endurance, and good retention times (more than 10 000 s). The successful operation of sub-micron scale memory devices of our polyfluorene-derivative polymer shows promise to fabricate high-density polymer memory devices.

Original language	English
Article number	025201
Journal	Nanotechnology
Volume	20
Issue number	2
DOIs	https://doi.org/10.1088/0957-4484/20/2/025201
Publication status	Published - 2009 Jan 14
Externally published	Yes

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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Cite this

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title = "Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure",

abstract = "The resistive switching characteristics of polyfluorene-derivative polymer material in a sub-micron scale via-hole device structure were investigated. The scalable via-hole sub-microstructure was fabricated using an e-beam lithographic technique. The polymer non-volatile memory devices varied in size from 40 × 40 νm2 to 200 × 200 nm2. From the scaling of junction size, the memory mechanism can be attributed to the space-charge-limited current with filamentary conduction. Sub-micron scale polymer memory devices showed excellent resistive switching behaviours such as a large ON/OFF ratio (ION/IOFF∼104), excellent device-to-device switching uniformity, good sweep endurance, and good retention times (more than 10 000 s). The successful operation of sub-micron scale memory devices of our polyfluorene-derivative polymer shows promise to fabricate high-density polymer memory devices.",

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AU - Kim, Tae Wook

AU - Choi, Hyejung

AU - Oh, Seung Hwan

AU - Jo, Minseok

AU - Wang, Gunuk

AU - Cho, Byungjin

AU - Kim, Dong Yu

AU - Hwang, Hyunsang

AU - Lee, Takhee

PY - 2009/1/14

Y1 - 2009/1/14

N2 - The resistive switching characteristics of polyfluorene-derivative polymer material in a sub-micron scale via-hole device structure were investigated. The scalable via-hole sub-microstructure was fabricated using an e-beam lithographic technique. The polymer non-volatile memory devices varied in size from 40 × 40 νm2 to 200 × 200 nm2. From the scaling of junction size, the memory mechanism can be attributed to the space-charge-limited current with filamentary conduction. Sub-micron scale polymer memory devices showed excellent resistive switching behaviours such as a large ON/OFF ratio (ION/IOFF∼104), excellent device-to-device switching uniformity, good sweep endurance, and good retention times (more than 10 000 s). The successful operation of sub-micron scale memory devices of our polyfluorene-derivative polymer shows promise to fabricate high-density polymer memory devices.

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Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure

Abstract

ASJC Scopus subject areas

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