Resistive switching characteristics of Pr0.7Ca0.3MnO3 thin films grown on glass substrates by pulsed laser deposition

D. S. Kim, Y. H. Kim, Cheol Eui Lee, Y. T. Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Pr0.7Ca0.3MnO3 (PCMO) thin films were prepared on glass substrates by pulsed laser deposition and their resistive switching characteristics were investigated on a structure comprised of Ag/PCMO/Ag/glass. The PCMO films were grown with a (112) preferred orientation on Ag/glass substrates due to crystalline Ag layer. The crystalline PCMO films exhibited resistive switching characteristics by polarity change of bias voltage. The resistance ratio of high resistance state and low resistance state was enhanced by improvement of crystallinity of the PCMO film. The maximum resistance ratio obtained in this work was ∼ 4.2. Finally, the resistive switching of the PCMO films observed in this work is expected to make it possible to integrate the non-volatile memory devices on glass substrates.

Original languageEnglish
Pages (from-to)2573-2576
Number of pages4
JournalThin Solid Films
Volume515
Issue number4
DOIs
Publication statusPublished - 2006 Dec 5

Keywords

  • Glass substrate
  • PrCaMnO thin film
  • Pulsed laser deposition
  • Resistive switching

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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