Resistive switching characteristics of sol-gel based ZnO nanorods fabricated on flexible substrates

Soyun Park, Jae Hyuk Lee, Hee Dong Kim, Seok Man Hong, Ho Myoung An, Tae Geun Kim

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The authors report the resistive switching characteristics of sol-gel based ZnO nanorods (NRs) fabricated on flexible substrates. A resistance ratio of 10, endurance of over 100 cycles, and narrower dispersion in the ON/OFF voltages and resistances compared to ZnO thin-film devices are demonstrated. Furthermore, the resistive switching characteristics on flexible substrates are maintained under severe substrate bending because of the ductile properties of the nanorods. Devices composed of the Au/sol-gel based NRs/Au structure have the potential for low-temperature flexible nonvolatile memory applications.

Original languageEnglish
Pages (from-to)493-496
Number of pages4
JournalPhysica Status Solidi - Rapid Research Letters
Volume7
Issue number7
DOIs
Publication statusPublished - 2013 Jul

Keywords

  • Nanorods
  • Resistive switching
  • Sol-gel method
  • ZnO

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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