Resistive switching memory devices composed of binary transition metal oxides using sol-gel chemistry

Chanwoo Lee, Inpyo Kim, Wonsup Choi, Hyunjung Shin, Jinhan Cho

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

We describe a novel and versatile approach for preparing resistive switching memory devices based on binary transition metal oxides (TMOs). Titanium isopropoxide (TIPP) was spin-coated onto platinum (Pt)-coated silicon substrates using a sol-gel process. The sol-gel-derived layer was converted into a TiO 2 film by thermal annealing. A top electrode (Ag electrode) was then coated onto the TiO 2 films to complete device fabrication. When an external bias was applied to the devices, a switching phenomenon independent of the voltage polarity (i.e., unipolar switching) was observed at low operating voltages (about 0.6 V RESET and 1.4 V SET). In addition, it was confirmed that the electrical properties (i.e., retention time, cycling test and switching speed) of the sol-gel-derived devices were comparable to those of vacuum deposited devices. This approach can be extended to a variety of binary TMOs such as niobium oxides. The reported approach offers new opportunities for preparing the binary TMO-based resistive switching memory devices allowing a facile solution processing.

Original languageEnglish
Pages (from-to)4274-4278
Number of pages5
JournalLangmuir
Volume25
Issue number8
DOIs
Publication statusPublished - 2009 Apr 21
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Electrochemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Materials Science(all)
  • Spectroscopy

Cite this