Resistive Switching Memory Integrated with Nanogenerator for Self-Powered Bioimplantable Devices

Bo Yun Kim, Woong Hee Lee, Hyun Gyu Hwang, Dong Ha Kim, Jeong Hun Kim, Sang Hoon Lee, Sahn Nahm

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Resistive random access memory (ReRAM) devices powered by piezoelectric nanogenerators (NGs) have been investigated for their application to future implantable biomedical devices. Biocompatible (Na0.5K0.5)NbO3 (NKN) films that are grown at 300 °C on TiN/SiO2/Si and flexible TiN/Polyimide (TiN-PI) substrates are used for ReRAM and NGs, respectively. These NKN films have an amorphous phase containing NKN nanocrystals with a size of 5.0 nm. NKN ReRAM devices exhibit typical bipolar switching behavior that can be explained by the formation and rupture of oxygen-vacancy filaments. They have good ReRAM properties such as a large ratio of RHRS to RLRS as well as high reliability. The NKN film grown on flexible TiN-PI substrate exhibits a high piezoelectric strain constant of 50 pm V-1. The NKN NG has a large open-circuit output voltage of 2.0 V and a short-circuit output current of 40 nA, which are sufficient to drive NKN ReRAM devices. Stable switching properties with a large ON/OFF ratio of 102 are obtained from NKN ReRAM driven by NKN NG.

Original languageEnglish
JournalAdvanced Functional Materials
DOIs
Publication statusAccepted/In press - 2016

Fingerprint

random access memory
Data storage equipment
polyimides
Polyimides
output
short circuits
Substrates
Oxygen vacancies
Short circuit currents
Nanocrystals
filaments
nanocrystals
Networks (circuits)
Electric potential
electric potential
oxygen

Keywords

  • Implantable biomedical applications
  • Nanogenerators
  • NKN thin films
  • ReRAMs
  • Self-powered systems

ASJC Scopus subject areas

  • Biomaterials
  • Electrochemistry
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Resistive Switching Memory Integrated with Nanogenerator for Self-Powered Bioimplantable Devices. / Kim, Bo Yun; Lee, Woong Hee; Hwang, Hyun Gyu; Kim, Dong Ha; Kim, Jeong Hun; Lee, Sang Hoon; Nahm, Sahn.

In: Advanced Functional Materials, 2016.

Research output: Contribution to journalArticle

@article{5c2eb39a33df4832959df175a6758fce,
title = "Resistive Switching Memory Integrated with Nanogenerator for Self-Powered Bioimplantable Devices",
abstract = "Resistive random access memory (ReRAM) devices powered by piezoelectric nanogenerators (NGs) have been investigated for their application to future implantable biomedical devices. Biocompatible (Na0.5K0.5)NbO3 (NKN) films that are grown at 300 °C on TiN/SiO2/Si and flexible TiN/Polyimide (TiN-PI) substrates are used for ReRAM and NGs, respectively. These NKN films have an amorphous phase containing NKN nanocrystals with a size of 5.0 nm. NKN ReRAM devices exhibit typical bipolar switching behavior that can be explained by the formation and rupture of oxygen-vacancy filaments. They have good ReRAM properties such as a large ratio of RHRS to RLRS as well as high reliability. The NKN film grown on flexible TiN-PI substrate exhibits a high piezoelectric strain constant of 50 pm V-1. The NKN NG has a large open-circuit output voltage of 2.0 V and a short-circuit output current of 40 nA, which are sufficient to drive NKN ReRAM devices. Stable switching properties with a large ON/OFF ratio of 102 are obtained from NKN ReRAM driven by NKN NG.",
keywords = "Implantable biomedical applications, Nanogenerators, NKN thin films, ReRAMs, Self-powered systems",
author = "Kim, {Bo Yun} and Lee, {Woong Hee} and Hwang, {Hyun Gyu} and Kim, {Dong Ha} and Kim, {Jeong Hun} and Lee, {Sang Hoon} and Sahn Nahm",
year = "2016",
doi = "10.1002/adfm.201505569",
language = "English",
journal = "Advanced Functional Materials",
issn = "1616-301X",
publisher = "Wiley-VCH Verlag",

}

TY - JOUR

T1 - Resistive Switching Memory Integrated with Nanogenerator for Self-Powered Bioimplantable Devices

AU - Kim, Bo Yun

AU - Lee, Woong Hee

AU - Hwang, Hyun Gyu

AU - Kim, Dong Ha

AU - Kim, Jeong Hun

AU - Lee, Sang Hoon

AU - Nahm, Sahn

PY - 2016

Y1 - 2016

N2 - Resistive random access memory (ReRAM) devices powered by piezoelectric nanogenerators (NGs) have been investigated for their application to future implantable biomedical devices. Biocompatible (Na0.5K0.5)NbO3 (NKN) films that are grown at 300 °C on TiN/SiO2/Si and flexible TiN/Polyimide (TiN-PI) substrates are used for ReRAM and NGs, respectively. These NKN films have an amorphous phase containing NKN nanocrystals with a size of 5.0 nm. NKN ReRAM devices exhibit typical bipolar switching behavior that can be explained by the formation and rupture of oxygen-vacancy filaments. They have good ReRAM properties such as a large ratio of RHRS to RLRS as well as high reliability. The NKN film grown on flexible TiN-PI substrate exhibits a high piezoelectric strain constant of 50 pm V-1. The NKN NG has a large open-circuit output voltage of 2.0 V and a short-circuit output current of 40 nA, which are sufficient to drive NKN ReRAM devices. Stable switching properties with a large ON/OFF ratio of 102 are obtained from NKN ReRAM driven by NKN NG.

AB - Resistive random access memory (ReRAM) devices powered by piezoelectric nanogenerators (NGs) have been investigated for their application to future implantable biomedical devices. Biocompatible (Na0.5K0.5)NbO3 (NKN) films that are grown at 300 °C on TiN/SiO2/Si and flexible TiN/Polyimide (TiN-PI) substrates are used for ReRAM and NGs, respectively. These NKN films have an amorphous phase containing NKN nanocrystals with a size of 5.0 nm. NKN ReRAM devices exhibit typical bipolar switching behavior that can be explained by the formation and rupture of oxygen-vacancy filaments. They have good ReRAM properties such as a large ratio of RHRS to RLRS as well as high reliability. The NKN film grown on flexible TiN-PI substrate exhibits a high piezoelectric strain constant of 50 pm V-1. The NKN NG has a large open-circuit output voltage of 2.0 V and a short-circuit output current of 40 nA, which are sufficient to drive NKN ReRAM devices. Stable switching properties with a large ON/OFF ratio of 102 are obtained from NKN ReRAM driven by NKN NG.

KW - Implantable biomedical applications

KW - Nanogenerators

KW - NKN thin films

KW - ReRAMs

KW - Self-powered systems

UR - http://www.scopus.com/inward/record.url?scp=84971330645&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84971330645&partnerID=8YFLogxK

U2 - 10.1002/adfm.201505569

DO - 10.1002/adfm.201505569

M3 - Article

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

ER -