Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

Seok Man Hong; Hee Dong Kim; Ho Myoung An; Tae Geun Kim

doi:10.1016/j.materresbull.2013.05.073

Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

Seok Man Hong, Hee Dong Kim, Ho Myoung An, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We report the resistive switching (RS) characteristics of tungsten nitride (WN_x) thin films with excellent complementary metal-oxide- semiconductor (CMOS) compatibility. A Ti/WN_x/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately ±2.2 V. The dominant conduction mechanisms at low and high resistance states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WN_x films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >10⁵ cycles and a long retention time of >10⁵ s.

Original language	English
Pages (from-to)	5080-5083
Number of pages	4
Journal	Materials Research Bulletin
Volume	48
Issue number	12
DOIs	https://doi.org/10.1016/j.materresbull.2013.05.073
Publication status	Published - 2013

Keywords

A. thin films
B. Sputtering
C. X-ray diffraction
D. Electrical properties

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.materresbull.2013.05.073

Cite this

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title = "Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility",

abstract = "We report the resistive switching (RS) characteristics of tungsten nitride (WNx) thin films with excellent complementary metal-oxide- semiconductor (CMOS) compatibility. A Ti/WNx/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately ±2.2 V. The dominant conduction mechanisms at low and high resistance states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WNx films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >105 cycles and a long retention time of >105 s.",

keywords = "A. thin films, B. Sputtering, C. X-ray diffraction, D. Electrical properties",

author = "Hong, {Seok Man} and Kim, {Hee Dong} and An, {Ho Myoung} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (No. 2011-0028769 , 2012-00109 ).",

year = "2013",

doi = "10.1016/j.materresbull.2013.05.073",

language = "English",

volume = "48",

pages = "5080--5083",

journal = "Materials Research Bulletin",

issn = "0025-5408",

publisher = "Elsevier Limited",

number = "12",

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TY - JOUR

T1 - Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

AU - Hong, Seok Man

AU - Kim, Hee Dong

AU - An, Ho Myoung

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (No. 2011-0028769 , 2012-00109 ).

PY - 2013

Y1 - 2013

N2 - We report the resistive switching (RS) characteristics of tungsten nitride (WNx) thin films with excellent complementary metal-oxide- semiconductor (CMOS) compatibility. A Ti/WNx/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately ±2.2 V. The dominant conduction mechanisms at low and high resistance states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WNx films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >105 cycles and a long retention time of >105 s.

AB - We report the resistive switching (RS) characteristics of tungsten nitride (WNx) thin films with excellent complementary metal-oxide- semiconductor (CMOS) compatibility. A Ti/WNx/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately ±2.2 V. The dominant conduction mechanisms at low and high resistance states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WNx films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >105 cycles and a long retention time of >105 s.

KW - A. thin films

KW - B. Sputtering

KW - C. X-ray diffraction

KW - D. Electrical properties

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U2 - 10.1016/j.materresbull.2013.05.073

DO - 10.1016/j.materresbull.2013.05.073

M3 - Article

AN - SCOPUS:84885950798

SN - 0025-5408

VL - 48

SP - 5080

EP - 5083

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 12

ER -

Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

Abstract

Keywords

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