Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

Seok Man Hong, Hee Dong Kim, Ho Myoung An, Tae Geun Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report the resistive switching (RS) characteristics of tungsten nitride (WNx) thin films with excellent complementary metal-oxide- semiconductor (CMOS) compatibility. A Ti/WNx/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately ±2.2 V. The dominant conduction mechanisms at low and high resistance states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WNx films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >105 cycles and a long retention time of >105 s.

Original languageEnglish
Pages (from-to)5080-5083
Number of pages4
JournalMaterials Research Bulletin
Volume48
Issue number12
DOIs
Publication statusPublished - 2013 Jun 14

Fingerprint

Tungsten
Nitrides
compatibility
nitrides
CMOS
tungsten
Metals
conduction
Thin films
thin films
Data storage equipment
endurance
Redox reactions
low resistance
high resistance
Electric space charge
low voltage
space charge
filaments
Durability

Keywords

  • A. thin films
  • B. Sputtering
  • C. X-ray diffraction
  • D. Electrical properties

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility. / Hong, Seok Man; Kim, Hee Dong; An, Ho Myoung; Kim, Tae Geun.

In: Materials Research Bulletin, Vol. 48, No. 12, 14.06.2013, p. 5080-5083.

Research output: Contribution to journalArticle

Hong, Seok Man ; Kim, Hee Dong ; An, Ho Myoung ; Kim, Tae Geun. / Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility. In: Materials Research Bulletin. 2013 ; Vol. 48, No. 12. pp. 5080-5083.
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