Data are presented on the resonant tunneling-related abrupt redshift observed in the temperature-dependent electroluminescence spectra of high-brightness InGaNGaN multi-quantum-well green light-emitting diodes (LEDs). It is found that the redshift arises mostly between 120 and 150 K, and brighter LEDs yield larger redshifts. These results are well explained by the proposed nanocrater model which comprises a Ga-rich quantum barrier surrounding the In-rich quantum-dot-like localized state. Intensity analysis manifests that the resonant tunneling from the quantum-well to the nanocrater-shaped localized states induces such an abrupt energy shift and enhances the room-temperature emission.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2005 Mar 28|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)