Resonance-tunneling-assisted emission enhancement in green light-emitting diodes with nanocraters formed in InGaNGaN quantum-well active layers

Jae Ho Song, G. Hugh Song, Jhang W. Lee, Young Woo Ok, Tae Yeon Seong, Oleg Laboutin, Paul Deluca, H. K. Choi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Data are presented on the resonant tunneling-related abrupt redshift observed in the temperature-dependent electroluminescence spectra of high-brightness InGaNGaN multi-quantum-well green light-emitting diodes (LEDs). It is found that the redshift arises mostly between 120 and 150 K, and brighter LEDs yield larger redshifts. These results are well explained by the proposed nanocrater model which comprises a Ga-rich quantum barrier surrounding the In-rich quantum-dot-like localized state. Intensity analysis manifests that the resonant tunneling from the quantum-well to the nanocrater-shaped localized states induces such an abrupt energy shift and enhances the room-temperature emission.

Original languageEnglish
Article number132102
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number13
DOIs
Publication statusPublished - 2005 Mar 28
Externally publishedYes

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resonant tunneling
light emitting diodes
quantum wells
augmentation
electroluminescence
brightness
quantum dots
shift
room temperature
temperature
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Resonance-tunneling-assisted emission enhancement in green light-emitting diodes with nanocraters formed in InGaNGaN quantum-well active layers. / Song, Jae Ho; Song, G. Hugh; Lee, Jhang W.; Ok, Young Woo; Seong, Tae Yeon; Laboutin, Oleg; Deluca, Paul; Choi, H. K.

In: Applied Physics Letters, Vol. 86, No. 13, 132102, 28.03.2005, p. 1-3.

Research output: Contribution to journalArticle

Song, Jae Ho ; Song, G. Hugh ; Lee, Jhang W. ; Ok, Young Woo ; Seong, Tae Yeon ; Laboutin, Oleg ; Deluca, Paul ; Choi, H. K. / Resonance-tunneling-assisted emission enhancement in green light-emitting diodes with nanocraters formed in InGaNGaN quantum-well active layers. In: Applied Physics Letters. 2005 ; Vol. 86, No. 13. pp. 1-3.
@article{649f2db3c54e46a9805832b3cc17bcfb,
title = "Resonance-tunneling-assisted emission enhancement in green light-emitting diodes with nanocraters formed in InGaNGaN quantum-well active layers",
abstract = "Data are presented on the resonant tunneling-related abrupt redshift observed in the temperature-dependent electroluminescence spectra of high-brightness InGaNGaN multi-quantum-well green light-emitting diodes (LEDs). It is found that the redshift arises mostly between 120 and 150 K, and brighter LEDs yield larger redshifts. These results are well explained by the proposed nanocrater model which comprises a Ga-rich quantum barrier surrounding the In-rich quantum-dot-like localized state. Intensity analysis manifests that the resonant tunneling from the quantum-well to the nanocrater-shaped localized states induces such an abrupt energy shift and enhances the room-temperature emission.",
author = "Song, {Jae Ho} and Song, {G. Hugh} and Lee, {Jhang W.} and Ok, {Young Woo} and Seong, {Tae Yeon} and Oleg Laboutin and Paul Deluca and Choi, {H. K.}",
year = "2005",
month = "3",
day = "28",
doi = "10.1063/1.1890475",
language = "English",
volume = "86",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "13",

}

TY - JOUR

T1 - Resonance-tunneling-assisted emission enhancement in green light-emitting diodes with nanocraters formed in InGaNGaN quantum-well active layers

AU - Song, Jae Ho

AU - Song, G. Hugh

AU - Lee, Jhang W.

AU - Ok, Young Woo

AU - Seong, Tae Yeon

AU - Laboutin, Oleg

AU - Deluca, Paul

AU - Choi, H. K.

PY - 2005/3/28

Y1 - 2005/3/28

N2 - Data are presented on the resonant tunneling-related abrupt redshift observed in the temperature-dependent electroluminescence spectra of high-brightness InGaNGaN multi-quantum-well green light-emitting diodes (LEDs). It is found that the redshift arises mostly between 120 and 150 K, and brighter LEDs yield larger redshifts. These results are well explained by the proposed nanocrater model which comprises a Ga-rich quantum barrier surrounding the In-rich quantum-dot-like localized state. Intensity analysis manifests that the resonant tunneling from the quantum-well to the nanocrater-shaped localized states induces such an abrupt energy shift and enhances the room-temperature emission.

AB - Data are presented on the resonant tunneling-related abrupt redshift observed in the temperature-dependent electroluminescence spectra of high-brightness InGaNGaN multi-quantum-well green light-emitting diodes (LEDs). It is found that the redshift arises mostly between 120 and 150 K, and brighter LEDs yield larger redshifts. These results are well explained by the proposed nanocrater model which comprises a Ga-rich quantum barrier surrounding the In-rich quantum-dot-like localized state. Intensity analysis manifests that the resonant tunneling from the quantum-well to the nanocrater-shaped localized states induces such an abrupt energy shift and enhances the room-temperature emission.

UR - http://www.scopus.com/inward/record.url?scp=17644389899&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17644389899&partnerID=8YFLogxK

U2 - 10.1063/1.1890475

DO - 10.1063/1.1890475

M3 - Article

AN - SCOPUS:17644389899

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

M1 - 132102

ER -