Resonance-tunneling-assisted emission enhancement in green light-emitting diodes with nanocraters formed in InGaNGaN quantum-well active layers

Jae Ho Song, G. Hugh Song, Jhang W. Lee, Young Woo Ok, Tae Yeon Seong, Oleg Laboutin, Paul Deluca, H. K. Choi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Data are presented on the resonant tunneling-related abrupt redshift observed in the temperature-dependent electroluminescence spectra of high-brightness InGaNGaN multi-quantum-well green light-emitting diodes (LEDs). It is found that the redshift arises mostly between 120 and 150 K, and brighter LEDs yield larger redshifts. These results are well explained by the proposed nanocrater model which comprises a Ga-rich quantum barrier surrounding the In-rich quantum-dot-like localized state. Intensity analysis manifests that the resonant tunneling from the quantum-well to the nanocrater-shaped localized states induces such an abrupt energy shift and enhances the room-temperature emission.

Original languageEnglish
Article number132102
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number13
DOIs
Publication statusPublished - 2005 Mar 28
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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