Reverse active mode current characteristics of SiGe HBTs

Jae-Sung Rieh, Jin Cai, Tak Ning, Andreas Stricker, Greg Freeman

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The current characteristics of SiGe heterojunction bipolar transistors (HBTs) operating in the reverse active mode are investigated. It is experimentally shown that the IC is identical for the reverse and the forward modes for arbitrary doping and Ge profiles across the base to first order. In contrast, the impact of VBE and VCB modulation on IC is opposite for the two modes, leading to a smaller Early voltage but more ideal collector current for the reverse mode.

Original languageEnglish
Pages (from-to)1219-1222
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume52
Issue number6
DOIs
Publication statusPublished - 2005 Jun 1

Fingerprint

Heterojunction bipolar transistors
bipolar transistors
heterojunctions
Doping (additives)
Modulation
Electric potential
accumulators
modulation
electric potential
profiles

Keywords

  • Current
  • Heterojunction bipolar transistors (HBTs)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Reverse active mode current characteristics of SiGe HBTs. / Rieh, Jae-Sung; Cai, Jin; Ning, Tak; Stricker, Andreas; Freeman, Greg.

In: IEEE Transactions on Electron Devices, Vol. 52, No. 6, 01.06.2005, p. 1219-1222.

Research output: Contribution to journalArticle

Rieh, Jae-Sung ; Cai, Jin ; Ning, Tak ; Stricker, Andreas ; Freeman, Greg. / Reverse active mode current characteristics of SiGe HBTs. In: IEEE Transactions on Electron Devices. 2005 ; Vol. 52, No. 6. pp. 1219-1222.
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