Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes

Jihyun Kim; F. Ren; B. P. Gila; C. R. Abernathy; S. J. Pearton

doi:10.1063/1.1541944

Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes

Jihyun Kim, F. Ren, B. P. Gila, C. R. Abernathy, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

83 Citations (Scopus)

Abstract

The measurements of the forward current-voltage characteristics of both Pt/GaN and Pd/GaN Schottky diodes in N₂ and 10% H₂ in N₂ ambient at different temperatures were presented. It was found that exposure to hydrogen-containing ambients showed a decrease in effective barrier height for both metals relative to the values measured in pure N₂ ambients. The analysis showed that magnitude of the changes increased with temperature due to the effective cracking of the H₂.

Original language	English
Pages (from-to)	739-741
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	5
DOIs	https://doi.org/10.1063/1.1541944
Publication status	Published - 2003 Feb 3
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The measurements of the forward current-voltage characteristics of both Pt/GaN and Pd/GaN Schottky diodes in N2 and 10% H2 in N2 ambient at different temperatures were presented. It was found that exposure to hydrogen-containing ambients showed a decrease in effective barrier height for both metals relative to the values measured in pure N2 ambients. The analysis showed that magnitude of the changes increased with temperature due to the effective cracking of the H2.",

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AU - Ren, F.

AU - Gila, B. P.

AU - Abernathy, C. R.

AU - Pearton, S. J.

PY - 2003/2/3

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N2 - The measurements of the forward current-voltage characteristics of both Pt/GaN and Pd/GaN Schottky diodes in N2 and 10% H2 in N2 ambient at different temperatures were presented. It was found that exposure to hydrogen-containing ambients showed a decrease in effective barrier height for both metals relative to the values measured in pure N2 ambients. The analysis showed that magnitude of the changes increased with temperature due to the effective cracking of the H2.

AB - The measurements of the forward current-voltage characteristics of both Pt/GaN and Pd/GaN Schottky diodes in N2 and 10% H2 in N2 ambient at different temperatures were presented. It was found that exposure to hydrogen-containing ambients showed a decrease in effective barrier height for both metals relative to the values measured in pure N2 ambients. The analysis showed that magnitude of the changes increased with temperature due to the effective cracking of the H2.

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Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes

Abstract

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