Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes

Ji Hyun Kim, F. Ren, B. P. Gila, C. R. Abernathy, S. J. Pearton

Research output: Contribution to journalArticle

79 Citations (Scopus)

Abstract

The measurements of the forward current-voltage characteristics of both Pt/GaN and Pd/GaN Schottky diodes in N2 and 10% H2 in N2 ambient at different temperatures were presented. It was found that exposure to hydrogen-containing ambients showed a decrease in effective barrier height for both metals relative to the values measured in pure N2 ambients. The analysis showed that magnitude of the changes increased with temperature due to the effective cracking of the H2.

Original languageEnglish
Pages (from-to)739-741
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number5
DOIs
Publication statusPublished - 2003 Feb 3
Externally publishedYes

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diodes
hydrogen
Schottky diodes
temperature
electric potential
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes. / Kim, Ji Hyun; Ren, F.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.

In: Applied Physics Letters, Vol. 82, No. 5, 03.02.2003, p. 739-741.

Research output: Contribution to journalArticle

Kim, Ji Hyun ; Ren, F. ; Gila, B. P. ; Abernathy, C. R. ; Pearton, S. J. / Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes. In: Applied Physics Letters. 2003 ; Vol. 82, No. 5. pp. 739-741.
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