Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films

Jun Hong Noh; Hyun Suk Jung; Jung Kun Lee; Jin Young Kim; Chin Moo Cho; Jae Sul An; Kug Sun Hong

doi:10.1063/1.2987472

Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films

Jun Hong Noh, Hyun Suk Jung, Jung Kun Lee, Jin Young Kim, Chin Moo Cho, Jae Sul An, Kug Sun Hong

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

Aluminum-doped ZnO (AZO) films were epitaxially grown on sapphire (0001) substrates using pulsed laser deposition. As-deposited AZO films had a low resistivity of 8.01× 10-4 Ω cm. However, after annealing at 450 °C in air, the electrical resistivity of the AZO films increased to 1.97× 10-1 Ω cm because of a decrease in the carrier concentration. Subsequent annealing of the air-annealed AZO films in H2 recovered the electrical conductivity of the AZO films. In addition, the conductivity change was reversible upon repeated air and H2 annealing. A photoluminescence study showed that oxygen interstitial (Oi′) is a critical material parameter allowing for the reversible control of the electrical conducting properties of AZO films.

Original language	English
Article number	073706
Journal	Journal of Applied Physics
Volume	104
Issue number	7
DOIs	https://doi.org/10.1063/1.2987472
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.2987472

Cite this

@article{2c3a38ddd5fa4ffbbb64223129550a10,

title = "Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films",

abstract = "Aluminum-doped ZnO (AZO) films were epitaxially grown on sapphire (0001) substrates using pulsed laser deposition. As-deposited AZO films had a low resistivity of 8.01× 10-4 Ω cm. However, after annealing at 450 °C in air, the electrical resistivity of the AZO films increased to 1.97× 10-1 Ω cm because of a decrease in the carrier concentration. Subsequent annealing of the air-annealed AZO films in H2 recovered the electrical conductivity of the AZO films. In addition, the conductivity change was reversible upon repeated air and H2 annealing. A photoluminescence study showed that oxygen interstitial (Oi′) is a critical material parameter allowing for the reversible control of the electrical conducting properties of AZO films.",

author = "Noh, {Jun Hong} and Jung, {Hyun Suk} and Lee, {Jung Kun} and Kim, {Jin Young} and Cho, {Chin Moo} and An, {Jae Sul} and Hong, {Kug Sun}",

note = "Funding Information: This research was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, Republic of Korea (RIAM).",

year = "2008",

doi = "10.1063/1.2987472",

language = "English",

volume = "104",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films

AU - Noh, Jun Hong

AU - Jung, Hyun Suk

AU - Lee, Jung Kun

AU - Kim, Jin Young

AU - Cho, Chin Moo

AU - An, Jae Sul

AU - Hong, Kug Sun

N1 - Funding Information: This research was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, Republic of Korea (RIAM).

PY - 2008

Y1 - 2008

N2 - Aluminum-doped ZnO (AZO) films were epitaxially grown on sapphire (0001) substrates using pulsed laser deposition. As-deposited AZO films had a low resistivity of 8.01× 10-4 Ω cm. However, after annealing at 450 °C in air, the electrical resistivity of the AZO films increased to 1.97× 10-1 Ω cm because of a decrease in the carrier concentration. Subsequent annealing of the air-annealed AZO films in H2 recovered the electrical conductivity of the AZO films. In addition, the conductivity change was reversible upon repeated air and H2 annealing. A photoluminescence study showed that oxygen interstitial (Oi′) is a critical material parameter allowing for the reversible control of the electrical conducting properties of AZO films.

AB - Aluminum-doped ZnO (AZO) films were epitaxially grown on sapphire (0001) substrates using pulsed laser deposition. As-deposited AZO films had a low resistivity of 8.01× 10-4 Ω cm. However, after annealing at 450 °C in air, the electrical resistivity of the AZO films increased to 1.97× 10-1 Ω cm because of a decrease in the carrier concentration. Subsequent annealing of the air-annealed AZO films in H2 recovered the electrical conductivity of the AZO films. In addition, the conductivity change was reversible upon repeated air and H2 annealing. A photoluminescence study showed that oxygen interstitial (Oi′) is a critical material parameter allowing for the reversible control of the electrical conducting properties of AZO films.

UR - http://www.scopus.com/inward/record.url?scp=54049105690&partnerID=8YFLogxK

U2 - 10.1063/1.2987472

DO - 10.1063/1.2987472

M3 - Article

AN - SCOPUS:54049105690

SN - 0021-8979

VL - 104

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 073706

ER -

Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this