Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films

Jun Hong Noh, Hyun Suk Jung, Jung Kun Lee, Jin Young Kim, Chin Moo Cho, Jae Sul An, Kug Sun Hong

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)

Abstract

Aluminum-doped ZnO (AZO) films were epitaxially grown on sapphire (0001) substrates using pulsed laser deposition. As-deposited AZO films had a low resistivity of 8.01× 10-4 Ω cm. However, after annealing at 450 °C in air, the electrical resistivity of the AZO films increased to 1.97× 10-1 Ω cm because of a decrease in the carrier concentration. Subsequent annealing of the air-annealed AZO films in H2 recovered the electrical conductivity of the AZO films. In addition, the conductivity change was reversible upon repeated air and H2 annealing. A photoluminescence study showed that oxygen interstitial (Oi′) is a critical material parameter allowing for the reversible control of the electrical conducting properties of AZO films.

Original languageEnglish
Article number073706
JournalJournal of Applied Physics
Volume104
Issue number7
DOIs
Publication statusPublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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