Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films

Jun Hong Noh, Hyun Suk Jung, Jung Kun Lee, Jin Young Kim, Chin Moo Cho, Jae Sul An, Kug Sun Hong

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Aluminum-doped ZnO (AZO) films were epitaxially grown on sapphire (0001) substrates using pulsed laser deposition. As-deposited AZO films had a low resistivity of 8.01× 10-4 Ω cm. However, after annealing at 450 °C in air, the electrical resistivity of the AZO films increased to 1.97× 10-1 Ω cm because of a decrease in the carrier concentration. Subsequent annealing of the air-annealed AZO films in H2 recovered the electrical conductivity of the AZO films. In addition, the conductivity change was reversible upon repeated air and H2 annealing. A photoluminescence study showed that oxygen interstitial (Oi′) is a critical material parameter allowing for the reversible control of the electrical conducting properties of AZO films.

Original languageEnglish
Article number073706
JournalJournal of Applied Physics
Volume104
Issue number7
DOIs
Publication statusPublished - 2008 Oct 22
Externally publishedYes

Fingerprint

electrical properties
aluminum
optical properties
thin films
electrical resistivity
annealing
air
pulsed laser deposition
interstitials
sapphire
photoluminescence
conduction
conductivity
oxygen

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films. / Noh, Jun Hong; Jung, Hyun Suk; Lee, Jung Kun; Kim, Jin Young; Cho, Chin Moo; An, Jae Sul; Hong, Kug Sun.

In: Journal of Applied Physics, Vol. 104, No. 7, 073706, 22.10.2008.

Research output: Contribution to journalArticle

Noh, Jun Hong ; Jung, Hyun Suk ; Lee, Jung Kun ; Kim, Jin Young ; Cho, Chin Moo ; An, Jae Sul ; Hong, Kug Sun. / Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films. In: Journal of Applied Physics. 2008 ; Vol. 104, No. 7.
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