Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices

Tae Wook Kim, Seung Hwan Oh, Hyejung Choi, Gunuk Wang, Hyunsang Hwang, Dong Yu Kim, Takhee Lee

Research output: Contribution to journalArticle

64 Citations (Scopus)

Abstract

This letter reports on reversible switching behavior of metal-insulator-metal type nonvolatile organic memory devices using polyfluorene-derivative (WPF-oxy-F) single layer film. The current-voltage (I-V) characteristics showed that the WPF-oxy-F single layer film has two distinguished resistance states, low resistance state and high resistance state, with four orders of on/off ratio (Ion Ioff ∼ 104). From the analysis of I-V curves, area dependent I-V characteristics, and current images obtained by conducting atomic force microscopy we propose that the space charge limited current with filamentary conduction is a potential mechanism for the reversible switching behavior of WPF-Oxy-F memory devices.

Original languageEnglish
Article number253308
JournalApplied Physics Letters
Volume92
Issue number25
DOIs
Publication statusPublished - 2008 Jul 4
Externally publishedYes

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conduction
low resistance
high resistance
metals
space charge
insulators
atomic force microscopy
electric potential
curves
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices. / Kim, Tae Wook; Oh, Seung Hwan; Choi, Hyejung; Wang, Gunuk; Hwang, Hyunsang; Kim, Dong Yu; Lee, Takhee.

In: Applied Physics Letters, Vol. 92, No. 25, 253308, 04.07.2008.

Research output: Contribution to journalArticle

Kim, Tae Wook ; Oh, Seung Hwan ; Choi, Hyejung ; Wang, Gunuk ; Hwang, Hyunsang ; Kim, Dong Yu ; Lee, Takhee. / Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices. In: Applied Physics Letters. 2008 ; Vol. 92, No. 25.
@article{acd404ea9d284f889009b549eb5d397a,
title = "Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices",
abstract = "This letter reports on reversible switching behavior of metal-insulator-metal type nonvolatile organic memory devices using polyfluorene-derivative (WPF-oxy-F) single layer film. The current-voltage (I-V) characteristics showed that the WPF-oxy-F single layer film has two distinguished resistance states, low resistance state and high resistance state, with four orders of on/off ratio (Ion Ioff ∼ 104). From the analysis of I-V curves, area dependent I-V characteristics, and current images obtained by conducting atomic force microscopy we propose that the space charge limited current with filamentary conduction is a potential mechanism for the reversible switching behavior of WPF-Oxy-F memory devices.",
author = "Kim, {Tae Wook} and Oh, {Seung Hwan} and Hyejung Choi and Gunuk Wang and Hyunsang Hwang and Kim, {Dong Yu} and Takhee Lee",
year = "2008",
month = "7",
day = "4",
doi = "10.1063/1.2952825",
language = "English",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "25",

}

TY - JOUR

T1 - Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices

AU - Kim, Tae Wook

AU - Oh, Seung Hwan

AU - Choi, Hyejung

AU - Wang, Gunuk

AU - Hwang, Hyunsang

AU - Kim, Dong Yu

AU - Lee, Takhee

PY - 2008/7/4

Y1 - 2008/7/4

N2 - This letter reports on reversible switching behavior of metal-insulator-metal type nonvolatile organic memory devices using polyfluorene-derivative (WPF-oxy-F) single layer film. The current-voltage (I-V) characteristics showed that the WPF-oxy-F single layer film has two distinguished resistance states, low resistance state and high resistance state, with four orders of on/off ratio (Ion Ioff ∼ 104). From the analysis of I-V curves, area dependent I-V characteristics, and current images obtained by conducting atomic force microscopy we propose that the space charge limited current with filamentary conduction is a potential mechanism for the reversible switching behavior of WPF-Oxy-F memory devices.

AB - This letter reports on reversible switching behavior of metal-insulator-metal type nonvolatile organic memory devices using polyfluorene-derivative (WPF-oxy-F) single layer film. The current-voltage (I-V) characteristics showed that the WPF-oxy-F single layer film has two distinguished resistance states, low resistance state and high resistance state, with four orders of on/off ratio (Ion Ioff ∼ 104). From the analysis of I-V curves, area dependent I-V characteristics, and current images obtained by conducting atomic force microscopy we propose that the space charge limited current with filamentary conduction is a potential mechanism for the reversible switching behavior of WPF-Oxy-F memory devices.

UR - http://www.scopus.com/inward/record.url?scp=46049104904&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=46049104904&partnerID=8YFLogxK

U2 - 10.1063/1.2952825

DO - 10.1063/1.2952825

M3 - Article

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 253308

ER -