Abstract
This letter reports on reversible switching behavior of metal-insulator-metal type nonvolatile organic memory devices using polyfluorene-derivative (WPF-oxy-F) single layer film. The current-voltage (I-V) characteristics showed that the WPF-oxy-F single layer film has two distinguished resistance states, low resistance state and high resistance state, with four orders of on/off ratio (Ion Ioff ∼ 104). From the analysis of I-V curves, area dependent I-V characteristics, and current images obtained by conducting atomic force microscopy we propose that the space charge limited current with filamentary conduction is a potential mechanism for the reversible switching behavior of WPF-Oxy-F memory devices.
| Original language | English |
|---|---|
| Article number | 253308 |
| Journal | Applied Physics Letters |
| Volume | 92 |
| Issue number | 25 |
| DOIs | |
| Publication status | Published - 2008 Jul 4 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices. / Kim, Tae Wook; Oh, Seung Hwan; Choi, Hyejung; Wang, Gunuk; Hwang, Hyunsang; Kim, Dong Yu; Lee, Takhee.
In: Applied Physics Letters, Vol. 92, No. 25, 253308, 04.07.2008.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices
AU - Kim, Tae Wook
AU - Oh, Seung Hwan
AU - Choi, Hyejung
AU - Wang, Gunuk
AU - Hwang, Hyunsang
AU - Kim, Dong Yu
AU - Lee, Takhee
PY - 2008/7/4
Y1 - 2008/7/4
N2 - This letter reports on reversible switching behavior of metal-insulator-metal type nonvolatile organic memory devices using polyfluorene-derivative (WPF-oxy-F) single layer film. The current-voltage (I-V) characteristics showed that the WPF-oxy-F single layer film has two distinguished resistance states, low resistance state and high resistance state, with four orders of on/off ratio (Ion Ioff ∼ 104). From the analysis of I-V curves, area dependent I-V characteristics, and current images obtained by conducting atomic force microscopy we propose that the space charge limited current with filamentary conduction is a potential mechanism for the reversible switching behavior of WPF-Oxy-F memory devices.
AB - This letter reports on reversible switching behavior of metal-insulator-metal type nonvolatile organic memory devices using polyfluorene-derivative (WPF-oxy-F) single layer film. The current-voltage (I-V) characteristics showed that the WPF-oxy-F single layer film has two distinguished resistance states, low resistance state and high resistance state, with four orders of on/off ratio (Ion Ioff ∼ 104). From the analysis of I-V curves, area dependent I-V characteristics, and current images obtained by conducting atomic force microscopy we propose that the space charge limited current with filamentary conduction is a potential mechanism for the reversible switching behavior of WPF-Oxy-F memory devices.
UR - http://www.scopus.com/inward/record.url?scp=46049104904&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=46049104904&partnerID=8YFLogxK
U2 - 10.1063/1.2952825
DO - 10.1063/1.2952825
M3 - Article
VL - 92
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 25
M1 - 253308
ER -