Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices

Tae Wook Kim; Seung Hwan Oh; Hyejung Choi; Gunuk Wang; Hyunsang Hwang; Dong Yu Kim; Takhee Lee

doi:10.1063/1.2952825

Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices

Tae Wook Kim, Seung Hwan Oh, Hyejung Choi, Gunuk Wang, Hyunsang Hwang, Dong Yu Kim, Takhee Lee

Research output: Contribution to journal › Article

67 Citations (Scopus)

Abstract

This letter reports on reversible switching behavior of metal-insulator-metal type nonvolatile organic memory devices using polyfluorene-derivative (WPF-oxy-F) single layer film. The current-voltage (I-V) characteristics showed that the WPF-oxy-F single layer film has two distinguished resistance states, low resistance state and high resistance state, with four orders of on/off ratio (Ion Ioff ∼ 104). From the analysis of I-V curves, area dependent I-V characteristics, and current images obtained by conducting atomic force microscopy we propose that the space charge limited current with filamentary conduction is a potential mechanism for the reversible switching behavior of WPF-Oxy-F memory devices.

Original language	English
Article number	253308
Journal	Applied Physics Letters
Volume	92
Issue number	25
DOIs	https://doi.org/10.1063/1.2952825
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Kim, T. W., Oh, S. H., Choi, H., Wang, G., Hwang, H., Kim, D. Y., & Lee, T. (2008). Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices. Applied Physics Letters, 92(25), [253308]. https://doi.org/10.1063/1.2952825

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abstract = "This letter reports on reversible switching behavior of metal-insulator-metal type nonvolatile organic memory devices using polyfluorene-derivative (WPF-oxy-F) single layer film. The current-voltage (I-V) characteristics showed that the WPF-oxy-F single layer film has two distinguished resistance states, low resistance state and high resistance state, with four orders of on/off ratio (Ion Ioff ∼ 104). From the analysis of I-V curves, area dependent I-V characteristics, and current images obtained by conducting atomic force microscopy we propose that the space charge limited current with filamentary conduction is a potential mechanism for the reversible switching behavior of WPF-Oxy-F memory devices.",

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AU - Hwang, Hyunsang

AU - Kim, Dong Yu

AU - Lee, Takhee

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