Abstract
This letter reports on reversible switching behavior of metal-insulator-metal type nonvolatile organic memory devices using polyfluorene-derivative (WPF-oxy-F) single layer film. The current-voltage (I-V) characteristics showed that the WPF-oxy-F single layer film has two distinguished resistance states, low resistance state and high resistance state, with four orders of on/off ratio (Ion Ioff ∼ 104). From the analysis of I-V curves, area dependent I-V characteristics, and current images obtained by conducting atomic force microscopy we propose that the space charge limited current with filamentary conduction is a potential mechanism for the reversible switching behavior of WPF-Oxy-F memory devices.
Original language | English |
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Article number | 253308 |
Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 25 |
DOIs | |
Publication status | Published - 2008 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)