Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices

Tae Wook Kim; Seung Hwan Oh; Hyejung Choi; Gunuk Wang; Hyunsang Hwang; Dong Yu Kim; Takhee Lee

doi:10.1063/1.2952825

Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices

Tae Wook Kim, Seung Hwan Oh, Hyejung Choi, Gunuk Wang, Hyunsang Hwang, Dong Yu Kim, Takhee Lee

Research output: Contribution to journal › Article › peer-review

68 Citations (Scopus)

Abstract

This letter reports on reversible switching behavior of metal-insulator-metal type nonvolatile organic memory devices using polyfluorene-derivative (WPF-oxy-F) single layer film. The current-voltage (I-V) characteristics showed that the WPF-oxy-F single layer film has two distinguished resistance states, low resistance state and high resistance state, with four orders of on/off ratio (Ion Ioff ∼ 104). From the analysis of I-V curves, area dependent I-V characteristics, and current images obtained by conducting atomic force microscopy we propose that the space charge limited current with filamentary conduction is a potential mechanism for the reversible switching behavior of WPF-Oxy-F memory devices.

Original language	English
Article number	253308
Journal	Applied Physics Letters
Volume	92
Issue number	25
DOIs	https://doi.org/10.1063/1.2952825
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2952825

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@article{acd404ea9d284f889009b549eb5d397a,

title = "Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices",

abstract = "This letter reports on reversible switching behavior of metal-insulator-metal type nonvolatile organic memory devices using polyfluorene-derivative (WPF-oxy-F) single layer film. The current-voltage (I-V) characteristics showed that the WPF-oxy-F single layer film has two distinguished resistance states, low resistance state and high resistance state, with four orders of on/off ratio (Ion Ioff ∼ 104). From the analysis of I-V curves, area dependent I-V characteristics, and current images obtained by conducting atomic force microscopy we propose that the space charge limited current with filamentary conduction is a potential mechanism for the reversible switching behavior of WPF-Oxy-F memory devices.",

author = "Kim, {Tae Wook} and Oh, {Seung Hwan} and Hyejung Choi and Gunuk Wang and Hyunsang Hwang and Kim, {Dong Yu} and Takhee Lee",

note = "Funding Information: This work was supported by the National Research Laboratory (NRL) Programs of the Korea Science and Engineering Foundation (KOSEF), the Program for Integrated Molecular System at GIST, and SystemIC2010 project of Korea Ministry of Knowledge Economy. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2008",

doi = "10.1063/1.2952825",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "25",

}

TY - JOUR

T1 - Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices

AU - Kim, Tae Wook

AU - Oh, Seung Hwan

AU - Choi, Hyejung

AU - Wang, Gunuk

AU - Hwang, Hyunsang

AU - Kim, Dong Yu

AU - Lee, Takhee

N1 - Funding Information: This work was supported by the National Research Laboratory (NRL) Programs of the Korea Science and Engineering Foundation (KOSEF), the Program for Integrated Molecular System at GIST, and SystemIC2010 project of Korea Ministry of Knowledge Economy. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2008

Y1 - 2008

N2 - This letter reports on reversible switching behavior of metal-insulator-metal type nonvolatile organic memory devices using polyfluorene-derivative (WPF-oxy-F) single layer film. The current-voltage (I-V) characteristics showed that the WPF-oxy-F single layer film has two distinguished resistance states, low resistance state and high resistance state, with four orders of on/off ratio (Ion Ioff ∼ 104). From the analysis of I-V curves, area dependent I-V characteristics, and current images obtained by conducting atomic force microscopy we propose that the space charge limited current with filamentary conduction is a potential mechanism for the reversible switching behavior of WPF-Oxy-F memory devices.

AB - This letter reports on reversible switching behavior of metal-insulator-metal type nonvolatile organic memory devices using polyfluorene-derivative (WPF-oxy-F) single layer film. The current-voltage (I-V) characteristics showed that the WPF-oxy-F single layer film has two distinguished resistance states, low resistance state and high resistance state, with four orders of on/off ratio (Ion Ioff ∼ 104). From the analysis of I-V curves, area dependent I-V characteristics, and current images obtained by conducting atomic force microscopy we propose that the space charge limited current with filamentary conduction is a potential mechanism for the reversible switching behavior of WPF-Oxy-F memory devices.

UR - http://www.scopus.com/inward/record.url?scp=46049104904&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=46049104904&partnerID=8YFLogxK

U2 - 10.1063/1.2952825

DO - 10.1063/1.2952825

M3 - Article

AN - SCOPUS:46049104904

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 253308

ER -

Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices

Abstract

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