Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices

Tae Wook Kim; Seung Hwan Oh; Hyejung Choi; Gunuk Wang; Hyunsang Hwang; Dong Yu Kim; Takhee Lee

doi:10.1063/1.2952825

Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices

Tae Wook Kim, Seung Hwan Oh, Hyejung Choi, Gunuk Wang, Hyunsang Hwang, Dong Yu Kim, Takhee Lee

Research output: Contribution to journal › Article › peer-review

68 Citations (Scopus)

Abstract

This letter reports on reversible switching behavior of metal-insulator-metal type nonvolatile organic memory devices using polyfluorene-derivative (WPF-oxy-F) single layer film. The current-voltage (I-V) characteristics showed that the WPF-oxy-F single layer film has two distinguished resistance states, low resistance state and high resistance state, with four orders of on/off ratio (Ion Ioff ∼ 104). From the analysis of I-V curves, area dependent I-V characteristics, and current images obtained by conducting atomic force microscopy we propose that the space charge limited current with filamentary conduction is a potential mechanism for the reversible switching behavior of WPF-Oxy-F memory devices.

Original language	English
Article number	253308
Journal	Applied Physics Letters
Volume	92
Issue number	25
DOIs	https://doi.org/10.1063/1.2952825
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2952825

Fingerprint Dive into the research topics of 'Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices'. Together they form a unique fingerprint.

Cite this

@article{acd404ea9d284f889009b549eb5d397a,

title = "Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices",

abstract = "This letter reports on reversible switching behavior of metal-insulator-metal type nonvolatile organic memory devices using polyfluorene-derivative (WPF-oxy-F) single layer film. The current-voltage (I-V) characteristics showed that the WPF-oxy-F single layer film has two distinguished resistance states, low resistance state and high resistance state, with four orders of on/off ratio (Ion Ioff ∼ 104). From the analysis of I-V curves, area dependent I-V characteristics, and current images obtained by conducting atomic force microscopy we propose that the space charge limited current with filamentary conduction is a potential mechanism for the reversible switching behavior of WPF-Oxy-F memory devices.",

author = "Kim, {Tae Wook} and Oh, {Seung Hwan} and Hyejung Choi and Gunuk Wang and Hyunsang Hwang and Kim, {Dong Yu} and Takhee Lee",

year = "2008",

doi = "10.1063/1.2952825",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "25",

}

TY - JOUR

T1 - Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices

AU - Kim, Tae Wook

AU - Oh, Seung Hwan

AU - Choi, Hyejung

AU - Wang, Gunuk

AU - Hwang, Hyunsang

AU - Kim, Dong Yu

AU - Lee, Takhee

PY - 2008

Y1 - 2008

N2 - This letter reports on reversible switching behavior of metal-insulator-metal type nonvolatile organic memory devices using polyfluorene-derivative (WPF-oxy-F) single layer film. The current-voltage (I-V) characteristics showed that the WPF-oxy-F single layer film has two distinguished resistance states, low resistance state and high resistance state, with four orders of on/off ratio (Ion Ioff ∼ 104). From the analysis of I-V curves, area dependent I-V characteristics, and current images obtained by conducting atomic force microscopy we propose that the space charge limited current with filamentary conduction is a potential mechanism for the reversible switching behavior of WPF-Oxy-F memory devices.

AB - This letter reports on reversible switching behavior of metal-insulator-metal type nonvolatile organic memory devices using polyfluorene-derivative (WPF-oxy-F) single layer film. The current-voltage (I-V) characteristics showed that the WPF-oxy-F single layer film has two distinguished resistance states, low resistance state and high resistance state, with four orders of on/off ratio (Ion Ioff ∼ 104). From the analysis of I-V curves, area dependent I-V characteristics, and current images obtained by conducting atomic force microscopy we propose that the space charge limited current with filamentary conduction is a potential mechanism for the reversible switching behavior of WPF-Oxy-F memory devices.

UR - http://www.scopus.com/inward/record.url?scp=46049104904&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=46049104904&partnerID=8YFLogxK

U2 - 10.1063/1.2952825

DO - 10.1063/1.2952825

M3 - Article

AN - SCOPUS:46049104904

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 253308

ER -