TY - JOUR
T1 - Review-group III-nitride-based ultraviolet light-emitting diodes
T2 - Ways of increasing external quantum efficiency
AU - Park, Jae Seong
AU - Kim, Jong Kyu
AU - Cho, Jaehee
AU - Seong, Tae Yeon
N1 - Funding Information:
This work was supported by LG Innotek, Co., Ltd. and the development of R&D professionals on LED convergence lighting for shipbuilding/marine plant and marine environments (project No: N0001363) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea).
PY - 2017/2/8
Y1 - 2017/2/8
N2 - There is a rapidly growing demand for highly efficient ultraviolet (UV) light sources for a wide variety of applications. In particular, state-of-the-art AlGaN deep UV light-emitting diodes (DUV LEDs) exhibit inadequately low external quantum efficiencies (EQEs). The low efficiencies are attributed to the inherent material properties of high-Al-content AlGaN including strained epitaxial layers, low carrier concentrations, and strong transverse magnetic (TM)-polarized light emission. Extensive efforts have been made to tackle these challenging issues and technological developments have been achieved and enabled the fabrication of reasonable EQE LEDs. In this review, recent advances in the growth of high-quality AlGaN epitaxial layers, transparent and reflective ohmic contacts, and light extraction for AlGaN-based UV LEDs are reviewed.
AB - There is a rapidly growing demand for highly efficient ultraviolet (UV) light sources for a wide variety of applications. In particular, state-of-the-art AlGaN deep UV light-emitting diodes (DUV LEDs) exhibit inadequately low external quantum efficiencies (EQEs). The low efficiencies are attributed to the inherent material properties of high-Al-content AlGaN including strained epitaxial layers, low carrier concentrations, and strong transverse magnetic (TM)-polarized light emission. Extensive efforts have been made to tackle these challenging issues and technological developments have been achieved and enabled the fabrication of reasonable EQE LEDs. In this review, recent advances in the growth of high-quality AlGaN epitaxial layers, transparent and reflective ohmic contacts, and light extraction for AlGaN-based UV LEDs are reviewed.
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U2 - 10.1149/2.0111704jss
DO - 10.1149/2.0111704jss
M3 - Review article
AN - SCOPUS:85028985816
VL - 6
SP - Q42-Q52
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 4
ER -