TY - JOUR
T1 - Review of radiation damage in GaN-based materials and devices
AU - Pearton, Stephen J.
AU - Deist, Richard
AU - Ren, Fan
AU - Liu, Lu
AU - Polyakov, Alexander Y.
AU - Kim, Jihyun
N1 - Funding Information:
The work at UF was supported by DTRA award HDTRA1-08-10-BRCWMD-BAA. The work at IRM was supported by a grant from Russian Foundation for Basic Research (05-02-08015) and ICTS (3029). The authors thank their collaborators at IRM, A. V. Govorkov N. B. Smirnov, and also Leonid Chernyak at UCF for helpful discussions.
PY - 2013/9
Y1 - 2013/9
N2 - A review of the effects of proton, neutron, γ-ray, and electron irradiation on GaN materials and devices is presented. Neutron irradiation tends to create disordered regions in the GaN, while the damage from the other forms of radiation is more typically point defects. In all cases, the damaged region contains carrier traps that reduce the mobility and conductivity of the GaN and at high enough doses, a significant degradation of device performance. GaN is several orders of magnitude more resistant to radiation damage than GaAs of similar doping concentrations. In terms of heterostructures, preliminary data suggests that the radiation hardness decreases in the order AlN/GaN > AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials.
AB - A review of the effects of proton, neutron, γ-ray, and electron irradiation on GaN materials and devices is presented. Neutron irradiation tends to create disordered regions in the GaN, while the damage from the other forms of radiation is more typically point defects. In all cases, the damaged region contains carrier traps that reduce the mobility and conductivity of the GaN and at high enough doses, a significant degradation of device performance. GaN is several orders of magnitude more resistant to radiation damage than GaAs of similar doping concentrations. In terms of heterostructures, preliminary data suggests that the radiation hardness decreases in the order AlN/GaN > AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials.
UR - http://www.scopus.com/inward/record.url?scp=84885158182&partnerID=8YFLogxK
U2 - 10.1116/1.4799504
DO - 10.1116/1.4799504
M3 - Review article
AN - SCOPUS:84885158182
VL - 31
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
SN - 0734-2101
IS - 5
M1 - 050801
ER -