Revisited parameter extraction methodology for electrical characterization of junctionless transistors

D. Y. Jeon, S. J. Park, M. Mouis, M. Berthomé, S. Barraud, G. T. Kim, G. Ghibaudo

Research output: Contribution to journalArticle

60 Citations (Scopus)

Abstract

Several electrical parameters characterize device performance, electron transport and doping level in MOS transistors. In this paper, Junctionless Transistors (JLTs) fabricated on (100) silicon on insulator (SOI) wafer with 145 nm thick BOX and 9 nm silicon thickness were considered. Parameter extraction methodologies were revisited in order to account for the unique electrical properties of JLT devices. The deduced parameters, such as threshold voltage, flat-band voltage, drain induced barrier lowering (DIBL), low field mobility and channel doping level, are shown to reveal the specific features of JLT compared to conventional inversion-mode transistors.

Original languageEnglish
Pages (from-to)86-93
Number of pages8
JournalSolid-State Electronics
Volume90
DOIs
Publication statusPublished - 2013

Keywords

  • Channel doping level
  • Drain induced barrier lowering (DIBL)
  • Flat-band voltage (V)
  • Junctionless transistors (JLTs)
  • Low field mobility (μ)
  • Threshold voltage (V)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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