TY - JOUR
T1 - Revisited parameter extraction methodology for electrical characterization of junctionless transistors
AU - Jeon, D. Y.
AU - Park, S. J.
AU - Mouis, M.
AU - Berthomé, M.
AU - Barraud, S.
AU - Kim, G. T.
AU - Ghibaudo, G.
N1 - Funding Information:
This work was supported by European Union 7th Framework Program project SQWIRE under Grant agreements No. 257111 and by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Converging Research Center Program, 2012K001313 and Global Frontier Research Program, No. 2011-0031638).
PY - 2013
Y1 - 2013
N2 - Several electrical parameters characterize device performance, electron transport and doping level in MOS transistors. In this paper, Junctionless Transistors (JLTs) fabricated on (100) silicon on insulator (SOI) wafer with 145 nm thick BOX and 9 nm silicon thickness were considered. Parameter extraction methodologies were revisited in order to account for the unique electrical properties of JLT devices. The deduced parameters, such as threshold voltage, flat-band voltage, drain induced barrier lowering (DIBL), low field mobility and channel doping level, are shown to reveal the specific features of JLT compared to conventional inversion-mode transistors.
AB - Several electrical parameters characterize device performance, electron transport and doping level in MOS transistors. In this paper, Junctionless Transistors (JLTs) fabricated on (100) silicon on insulator (SOI) wafer with 145 nm thick BOX and 9 nm silicon thickness were considered. Parameter extraction methodologies were revisited in order to account for the unique electrical properties of JLT devices. The deduced parameters, such as threshold voltage, flat-band voltage, drain induced barrier lowering (DIBL), low field mobility and channel doping level, are shown to reveal the specific features of JLT compared to conventional inversion-mode transistors.
KW - Channel doping level
KW - Drain induced barrier lowering (DIBL)
KW - Flat-band voltage (V)
KW - Junctionless transistors (JLTs)
KW - Low field mobility (μ)
KW - Threshold voltage (V)
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U2 - 10.1016/j.sse.2013.02.047
DO - 10.1016/j.sse.2013.02.047
M3 - Article
AN - SCOPUS:84887500320
VL - 90
SP - 86
EP - 93
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
ER -