RF characterization and modeling of various wire bond transitions

Ju Hwan Lim; Dae Han Kwon; Jae Sung Rieh; Soo Won Kim; Sung Woo Hwang

doi:10.1109/TADVP.2005.853554

RF characterization and modeling of various wire bond transitions

Ju Hwan Lim, Dae Han Kwon, Jae Sung Rieh, Soo Won Kim, Sung Woo Hwang

Research output: Contribution to journal › Article › peer-review

61 Citations (Scopus)

Abstract

This paper presents radio-frequency (RF) characterization and modeling of various wire bond transitions between chips and packages. Test modules composed of Si chips and alumina packages are fabricated in conductor-backed (CB) structures, and they are characterized at frequencies up to 20 GHz. It is shown that the parallel plate resonance of the CB coplanar waveguide (CPW) persists in wire bonding transitions, and narrower-ground CPW-CPW transitions show better characteristics than wider-ground CPW-CPW transitions. The results of three-dimensional full-wave electromagnetic simulation on the test modules reproduce the measured results with a reasonable accuracy. Simple equivalent circuit modeling can reproduce the measured results of the narrower ground CPW transition with no resonance structures. Finally, the effects of bond wire length and impedance mismatch on RF performance are investigated.

Original language	English
Pages (from-to)	772-778
Number of pages	7
Journal	IEEE Transactions on Advanced Packaging
Volume	28
Issue number	4
DOIs	https://doi.org/10.1109/TADVP.2005.853554
Publication status	Published - 2005 Nov

Keywords

Conductor-backed CPW
Coplanar waveguide (CPW)
Electromagnetic simulation
Finite-ground CPW
Microstrip
Modes
Wire bond

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/TADVP.2005.853554

Cite this

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title = "RF characterization and modeling of various wire bond transitions",

abstract = "This paper presents radio-frequency (RF) characterization and modeling of various wire bond transitions between chips and packages. Test modules composed of Si chips and alumina packages are fabricated in conductor-backed (CB) structures, and they are characterized at frequencies up to 20 GHz. It is shown that the parallel plate resonance of the CB coplanar waveguide (CPW) persists in wire bonding transitions, and narrower-ground CPW-CPW transitions show better characteristics than wider-ground CPW-CPW transitions. The results of three-dimensional full-wave electromagnetic simulation on the test modules reproduce the measured results with a reasonable accuracy. Simple equivalent circuit modeling can reproduce the measured results of the narrower ground CPW transition with no resonance structures. Finally, the effects of bond wire length and impedance mismatch on RF performance are investigated.",

keywords = "Conductor-backed CPW, Coplanar waveguide (CPW), Electromagnetic simulation, Finite-ground CPW, Microstrip, Modes, Wire bond",

author = "Lim, {Ju Hwan} and Kwon, {Dae Han} and Rieh, {Jae Sung} and Kim, {Soo Won} and Hwang, {Sung Woo}",

year = "2005",

month = nov,

doi = "10.1109/TADVP.2005.853554",

language = "English",

volume = "28",

pages = "772--778",

journal = "IEEE Transactions on Advanced Packaging",

issn = "1521-3323",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - RF characterization and modeling of various wire bond transitions

AU - Lim, Ju Hwan

AU - Kwon, Dae Han

AU - Rieh, Jae Sung

AU - Kim, Soo Won

AU - Hwang, Sung Woo

PY - 2005/11

Y1 - 2005/11

N2 - This paper presents radio-frequency (RF) characterization and modeling of various wire bond transitions between chips and packages. Test modules composed of Si chips and alumina packages are fabricated in conductor-backed (CB) structures, and they are characterized at frequencies up to 20 GHz. It is shown that the parallel plate resonance of the CB coplanar waveguide (CPW) persists in wire bonding transitions, and narrower-ground CPW-CPW transitions show better characteristics than wider-ground CPW-CPW transitions. The results of three-dimensional full-wave electromagnetic simulation on the test modules reproduce the measured results with a reasonable accuracy. Simple equivalent circuit modeling can reproduce the measured results of the narrower ground CPW transition with no resonance structures. Finally, the effects of bond wire length and impedance mismatch on RF performance are investigated.

AB - This paper presents radio-frequency (RF) characterization and modeling of various wire bond transitions between chips and packages. Test modules composed of Si chips and alumina packages are fabricated in conductor-backed (CB) structures, and they are characterized at frequencies up to 20 GHz. It is shown that the parallel plate resonance of the CB coplanar waveguide (CPW) persists in wire bonding transitions, and narrower-ground CPW-CPW transitions show better characteristics than wider-ground CPW-CPW transitions. The results of three-dimensional full-wave electromagnetic simulation on the test modules reproduce the measured results with a reasonable accuracy. Simple equivalent circuit modeling can reproduce the measured results of the narrower ground CPW transition with no resonance structures. Finally, the effects of bond wire length and impedance mismatch on RF performance are investigated.

KW - Conductor-backed CPW

KW - Coplanar waveguide (CPW)

KW - Electromagnetic simulation

KW - Finite-ground CPW

KW - Microstrip

KW - Modes

KW - Wire bond

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RF characterization and modeling of various wire bond transitions

Abstract

Keywords

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