Rhenium Diselenide (ReSe2) Near-Infrared Photodetector: Performance Enhancement by Selective p-Doping Technique

Jinok Kim, Keun Heo, Dong Ho Kang, Changhwan Shin, Sungjoo Lee, Hyun-Yong Yu, Jin Hong Park

Research output: Contribution to journalArticle

Abstract

In this study, a near-infrared photodetector featuring a high photoresponsivity and a short photoresponse time is demonstrated, which is fabricated on rhenium diselenide (ReSe2) with a relatively narrow bandgap (0.9–1.0 eV) compared to conventional transition-metal dichalcogenides (TMDs). The excellent photo and temporal responses, which generally show a trade-off relation, are achieved simultaneously by applying a p-doping technique based on hydrochloric acid (HCl) to a selected ReSe2 region. Because the p-doping of ReSe2 originates from the charge transfer from un-ionized Cl molecules in the HCl to the ReSe2 surface, by adjusting the concentration of the HCl solution from 0.1 to 10 m, the doping concentration of the ReSe2 is controlled between 3.64 × 1010 and 3.61 × 1011 cm−2. Especially, the application of the selective HCl doping technique to the ReSe2 photodetector increases the photoresponsivity from 79.99 to 1.93 × 103 A W−1, and it also enhances the rise and decay times from 10.5 to 1.4 ms and from 291 to 3.1 ms, respectively, compared with the undoped ReSe2 device. The proposed selective p-doping technique and its fundamental analysis will provide a scientific foundation for implementing high-performance TMD-based electronic and optoelectronic devices.

Original languageEnglish
Article number1901255
JournalAdvanced Science
DOIs
Publication statusAccepted/In press - 2019 Jan 1

Fingerprint

Rhenium
Hydrochloric Acid
rhenium
Photodetectors
hydrochloric acid
photometers
Hydrochloric acid
Doping (additives)
Infrared radiation
augmentation
Metals
Transition metals
Equipment and Supplies
transition metals
optoelectronic devices
Optoelectronic devices
Charge transfer
Energy gap
adjusting
charge transfer

Keywords

  • HCl doping
  • p-doping
  • photodetector
  • ReSe
  • selective doping
  • transistor
  • transition-metal dichalcogenides (TMDs)

ASJC Scopus subject areas

  • Medicine (miscellaneous)
  • Chemical Engineering(all)
  • Materials Science(all)
  • Biochemistry, Genetics and Molecular Biology (miscellaneous)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Rhenium Diselenide (ReSe2) Near-Infrared Photodetector : Performance Enhancement by Selective p-Doping Technique. / Kim, Jinok; Heo, Keun; Kang, Dong Ho; Shin, Changhwan; Lee, Sungjoo; Yu, Hyun-Yong; Park, Jin Hong.

In: Advanced Science, 01.01.2019.

Research output: Contribution to journalArticle

Kim, Jinok ; Heo, Keun ; Kang, Dong Ho ; Shin, Changhwan ; Lee, Sungjoo ; Yu, Hyun-Yong ; Park, Jin Hong. / Rhenium Diselenide (ReSe2) Near-Infrared Photodetector : Performance Enhancement by Selective p-Doping Technique. In: Advanced Science. 2019.
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AB - In this study, a near-infrared photodetector featuring a high photoresponsivity and a short photoresponse time is demonstrated, which is fabricated on rhenium diselenide (ReSe2) with a relatively narrow bandgap (0.9–1.0 eV) compared to conventional transition-metal dichalcogenides (TMDs). The excellent photo and temporal responses, which generally show a trade-off relation, are achieved simultaneously by applying a p-doping technique based on hydrochloric acid (HCl) to a selected ReSe2 region. Because the p-doping of ReSe2 originates from the charge transfer from un-ionized Cl molecules in the HCl to the ReSe2 surface, by adjusting the concentration of the HCl solution from 0.1 to 10 m, the doping concentration of the ReSe2 is controlled between 3.64 × 1010 and 3.61 × 1011 cm−2. Especially, the application of the selective HCl doping technique to the ReSe2 photodetector increases the photoresponsivity from 79.99 to 1.93 × 103 A W−1, and it also enhances the rise and decay times from 10.5 to 1.4 ms and from 291 to 3.1 ms, respectively, compared with the undoped ReSe2 device. The proposed selective p-doping technique and its fundamental analysis will provide a scientific foundation for implementing high-performance TMD-based electronic and optoelectronic devices.

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