We investigate the effect of a Mo interlayer on the thermal stability of nickel silicides. Glancing angle x-ray diffraction results show that NiSi is transformed into NiSi2 at temperatures in excess of 700°c, at which the tetragonal MOSi2 phase is also formed. It is shown that the Mo layer moves toward the surface region, when annealed at temperatures in excess of 500°c. It is also shown that the use of the interlayer is effective in improving the surface morphology of the silicide films and the uniformity of the silicide/Si interface.
|Title of host publication||Microscopy of Semiconducting Materials 2003|
|Number of pages||4|
|ISBN (Print)||0750309792, 9781315895536|
|Publication status||Published - 2018 Jan 1|
ASJC Scopus subject areas