Role of a Mo interlayer on the thermal stability of nickel silicides

Y. W. Ok, C. J. Choi, Tae Yeon Seong, C. Thanachayanont

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

We investigate the effect of a Mo interlayer on the thermal stability of nickel silicides. Glancing angle x-ray diffraction results show that NiSi is transformed into NiSi2 at temperatures in excess of 700°c, at which the tetragonal MOSi2 phase is also formed. It is shown that the Mo layer moves toward the surface region, when annealed at temperatures in excess of 500°c. It is also shown that the use of the interlayer is effective in improving the surface morphology of the silicide films and the uniformity of the silicide/Si interface.

Original languageEnglish
Title of host publicationMicroscopy of Semiconducting Materials 2003
PublisherCRC Press
Pages475-478
Number of pages4
ISBN (Electronic)9781351083089
ISBN (Print)0750309792, 9781315895536
DOIs
Publication statusPublished - 2018 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Ok, Y. W., Choi, C. J., Seong, T. Y., & Thanachayanont, C. (2018). Role of a Mo interlayer on the thermal stability of nickel silicides. In Microscopy of Semiconducting Materials 2003 (pp. 475-478). CRC Press. https://doi.org/10.1201/9781351074636