Behavior of Si adatoms on the Si(111)-7×7 surface at the initial growth stage of metal/Si(111) system has been investigated. The adatoms at the 7×7 surface can be removed rather easily with relatively low energy barrier. The addition of the adatom to dimer-adatom-stacking fault is the least contributing term to the Si(111)-7×7 reconstruction.
|Journal||Journal of the Korean Physical Society|
|Issue number||SUPPL. PART 1|
|Publication status||Published - 1997 Dec 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)