Role of adatom in the dimer-adatom-stacking fault model

Se Jong Kahng; Jared D. Lera; Yung Doug Suh; Ji Yong Park; Cheol Kyu Kim; Young Kuk

Role of adatom in the dimer-adatom-stacking fault model

Se Jong Kahng, Jared D. Lera, Yung Doug Suh, Ji Yong Park, Cheol Kyu Kim, Young Kuk

Research output: Contribution to journal › Article › peer-review

Abstract

Behavior of Si adatoms on the Si(111)-7×7 surface at the initial growth stage of metal/Si(111) system has been investigated. The adatoms at the 7×7 surface can be removed rather easily with relatively low energy barrier. The addition of the adatom to dimer-adatom-stacking fault is the least contributing term to the Si(111)-7×7 reconstruction.

Original language	English
Pages (from-to)	S16-S18
Journal	Journal of the Korean Physical Society
Volume	31
Issue number	SUPPL. PART 1
Publication status	Published - 1997
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

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title = "Role of adatom in the dimer-adatom-stacking fault model",

abstract = "Behavior of Si adatoms on the Si(111)-7×7 surface at the initial growth stage of metal/Si(111) system has been investigated. The adatoms at the 7×7 surface can be removed rather easily with relatively low energy barrier. The addition of the adatom to dimer-adatom-stacking fault is the least contributing term to the Si(111)-7×7 reconstruction.",

author = "Kahng, {Se Jong} and Lera, {Jared D.} and Suh, {Yung Doug} and Park, {Ji Yong} and Kim, {Cheol Kyu} and Young Kuk",

year = "1997",

language = "English",

volume = "31",

pages = "S16--S18",

journal = "Journal of the Korean Physical Society",

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T1 - Role of adatom in the dimer-adatom-stacking fault model

AU - Kahng, Se Jong

AU - Lera, Jared D.

AU - Suh, Yung Doug

AU - Park, Ji Yong

AU - Kim, Cheol Kyu

AU - Kuk, Young

PY - 1997

Y1 - 1997

N2 - Behavior of Si adatoms on the Si(111)-7×7 surface at the initial growth stage of metal/Si(111) system has been investigated. The adatoms at the 7×7 surface can be removed rather easily with relatively low energy barrier. The addition of the adatom to dimer-adatom-stacking fault is the least contributing term to the Si(111)-7×7 reconstruction.

AB - Behavior of Si adatoms on the Si(111)-7×7 surface at the initial growth stage of metal/Si(111) system has been investigated. The adatoms at the 7×7 surface can be removed rather easily with relatively low energy barrier. The addition of the adatom to dimer-adatom-stacking fault is the least contributing term to the Si(111)-7×7 reconstruction.

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M3 - Article

AN - SCOPUS:0031522664

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JO - Journal of the Korean Physical Society

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ER -

Role of adatom in the dimer-adatom-stacking fault model

Abstract

ASJC Scopus subject areas

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