Role of defects in the nucleation and growth of Au nanoclusters on SiO 2 thin films

Byoung Koun Min, W. T. Wallace, A. K. Santra, D. W. Goodman

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

Scanning tunneling microscopy (STM), in conjunction with the nucleation and growth of Au clusters, has been used to identify and quantify various types of defects on ordered, SiO 2 thin films grown on Mo(112). On a low-defect surface, Au clusters nucleate and grow at line defects with metal deposition at room temperature, whereas deposition at 850 K leads to cluster decoration primarily at step edges. On a highly defective surface, clusters nucleate and grow at point defects (oxygen vacancies and/or oxygen vacancy complexes) on the terraces, with some clusters grown on oxygen vacancy complexes remaining even after an 850 K anneal. The average cluster density for low Au coverages deposited at room temperature is identical to that obtained for the same Au coverage deposited at 850 K, consistent with complete titration of point defects by the nucleating clusters.

Original languageEnglish
Pages (from-to)16339-16343
Number of pages5
JournalJournal of Physical Chemistry B
Volume108
Issue number42
DOIs
Publication statusPublished - 2004 Oct 21
Externally publishedYes

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Nanoclusters
Oxygen vacancies
nanoclusters
Nucleation
nucleation
Point defects
Thin films
Defects
defects
thin films
Surface defects
Scanning tunneling microscopy
Titration
point defects
Metals
oxygen
Temperature
room temperature
surface defects
titration

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

Cite this

Role of defects in the nucleation and growth of Au nanoclusters on SiO 2 thin films. / Min, Byoung Koun; Wallace, W. T.; Santra, A. K.; Goodman, D. W.

In: Journal of Physical Chemistry B, Vol. 108, No. 42, 21.10.2004, p. 16339-16343.

Research output: Contribution to journalArticle

Min, Byoung Koun ; Wallace, W. T. ; Santra, A. K. ; Goodman, D. W. / Role of defects in the nucleation and growth of Au nanoclusters on SiO 2 thin films. In: Journal of Physical Chemistry B. 2004 ; Vol. 108, No. 42. pp. 16339-16343.
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