Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p-i-n rectifiers

S. Nigam, Ji Hyun Kim, B. Luo, F. Ren, G. Y. Chung, K. Shenai, P. G. Neudeck, S. J. Pearton, J. R. Williams

Research output: Contribution to journalArticle

Abstract

The reverse breakdown voltage (VB) of p-i-n rectifiers fabricated on 4H-SiC was measured as a function of device active area, mesa length and metal overlap distance for diodes with SiO2 passivated mesa edge termination. VB was inversely dependent on device area for the range 0.01-0.36 mm2, decreasing from ∼-1030 to ∼-730 V. The breakdown voltage was not dependent on mesa length and was maximized at ∼5 μm metal overlap distance. The on/off ratio was ∼104 at 3.5/-1000 V, with the power figure-of-merit VB 2/RON reaching values as high as 84.5 MWcm-2.

Original languageEnglish
Pages (from-to)1461-1464
Number of pages4
JournalSolid-State Electronics
Volume47
Issue number9
DOIs
Publication statusPublished - 2003 Sep 1
Externally publishedYes

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rectifiers
mesas
Electric breakdown
electrical faults
Metals
metals
Diodes
figure of merit
diodes
rice bran saccharide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p-i-n rectifiers. / Nigam, S.; Kim, Ji Hyun; Luo, B.; Ren, F.; Chung, G. Y.; Shenai, K.; Neudeck, P. G.; Pearton, S. J.; Williams, J. R.

In: Solid-State Electronics, Vol. 47, No. 9, 01.09.2003, p. 1461-1464.

Research output: Contribution to journalArticle

Nigam, S, Kim, JH, Luo, B, Ren, F, Chung, GY, Shenai, K, Neudeck, PG, Pearton, SJ & Williams, JR 2003, 'Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p-i-n rectifiers', Solid-State Electronics, vol. 47, no. 9, pp. 1461-1464. https://doi.org/10.1016/S0038-1101(03)00072-8
Nigam, S. ; Kim, Ji Hyun ; Luo, B. ; Ren, F. ; Chung, G. Y. ; Shenai, K. ; Neudeck, P. G. ; Pearton, S. J. ; Williams, J. R. / Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p-i-n rectifiers. In: Solid-State Electronics. 2003 ; Vol. 47, No. 9. pp. 1461-1464.
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AU - Chung, G. Y.

AU - Shenai, K.

AU - Neudeck, P. G.

AU - Pearton, S. J.

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