Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p-i-n rectifiers

S. Nigam, Ji Hyun Kim, B. Luo, F. Ren, G. Y. Chung, K. Shenai, P. G. Neudeck, S. J. Pearton, J. R. Williams

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Abstract

The reverse breakdown voltage (VB) of p-i-n rectifiers fabricated on 4H-SiC was measured as a function of device active area, mesa length and metal overlap distance for diodes with SiO2 passivated mesa edge termination. VB was inversely dependent on device area for the range 0.01-0.36 mm2, decreasing from ∼-1030 to ∼-730 V. The breakdown voltage was not dependent on mesa length and was maximized at ∼5 μm metal overlap distance. The on/off ratio was ∼104 at 3.5/-1000 V, with the power figure-of-merit VB 2/RON reaching values as high as 84.5 MWcm-2.

Original languageEnglish
Pages (from-to)1461-1464
Number of pages4
JournalSolid-State Electronics
Volume47
Issue number9
DOIs
Publication statusPublished - 2003 Sep 1
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Nigam, S., Kim, J. H., Luo, B., Ren, F., Chung, G. Y., Shenai, K., Neudeck, P. G., Pearton, S. J., & Williams, J. R. (2003). Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p-i-n rectifiers. Solid-State Electronics, 47(9), 1461-1464. https://doi.org/10.1016/S0038-1101(03)00072-8