The reverse breakdown voltage (VB) of p-i-n rectifiers fabricated on 4H-SiC was measured as a function of device active area, mesa length and metal overlap distance for diodes with SiO2 passivated mesa edge termination. VB was inversely dependent on device area for the range 0.01-0.36 mm2, decreasing from ∼-1030 to ∼-730 V. The breakdown voltage was not dependent on mesa length and was maximized at ∼5 μm metal overlap distance. The on/off ratio was ∼104 at 3.5/-1000 V, with the power figure-of-merit VB 2/RON reaching values as high as 84.5 MWcm-2.
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics