Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p-i-n rectifiers

S. Nigam, Jihyun Kim, B. Luo, F. Ren, G. Y. Chung, K. Shenai, P. G. Neudeck, S. J. Pearton, J. R. Williams

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Physics & Astronomy

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Engineering & Materials Science