Role of metal capping layer on highly enhanced electrical performance of In-free Si-Zn-Sn-O thin film transistor

Jun Young Choi; Sangsig Kim; Dae Hwan Kim; Sang Yeol Lee

doi:10.1016/j.tsf.2015.04.048

Role of metal capping layer on highly enhanced electrical performance of In-free Si-Zn-Sn-O thin film transistor

Jun Young Choi, Sangsig Kim, Dae Hwan Kim, Sang Yeol Lee

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Metal capping (MC) layer for Si-Zn-Sn-O thin film of the back channel layer of thin film transistors is proposed to protect from ambient effect and to improve electrical properties. Field effect mobility is improved from 34.46 cm²/V s to 147.59 cm²/V s and excellent stability of V_th ~ 0.6 V is obtained. The floating MC-layer forms a strongly compact-shape current-path as a result of the effective control of the surface potential by the low-resistance of MC-layer. In addition, the proposed device structure effectively prevents the adsorption/desorption reaction of ambient oxygen and water molecules on the surface.

Original language	English
Pages (from-to)	293-298
Number of pages	6
Journal	Thin Solid Films
Volume	594
DOIs	https://doi.org/10.1016/j.tsf.2015.04.048
Publication status	Published - 2015 Nov 2

Keywords

Metal capping
Oxide
Silicon zinc tin oxide
Thin film transistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2015.04.048

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@article{204d58a38d1c4b39926f8a72fc75db03,

title = "Role of metal capping layer on highly enhanced electrical performance of In-free Si-Zn-Sn-O thin film transistor",

abstract = "Metal capping (MC) layer for Si-Zn-Sn-O thin film of the back channel layer of thin film transistors is proposed to protect from ambient effect and to improve electrical properties. Field effect mobility is improved from 34.46 cm2/V s to 147.59 cm2/V s and excellent stability of Vth ~ 0.6 V is obtained. The floating MC-layer forms a strongly compact-shape current-path as a result of the effective control of the surface potential by the low-resistance of MC-layer. In addition, the proposed device structure effectively prevents the adsorption/desorption reaction of ambient oxygen and water molecules on the surface.",

keywords = "Metal capping, Oxide, Silicon zinc tin oxide, Thin film transistor",

author = "Choi, {Jun Young} and Sangsig Kim and Kim, {Dae Hwan} and Lee, {Sang Yeol}",

note = "Funding Information: This work was financially supported by the National Research Foundation of Korea ( NRF-2012R1A1A2040308 ) and ( NRF-2013R1A2A2A03069155 ). Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

month = nov,

day = "2",

doi = "10.1016/j.tsf.2015.04.048",

language = "English",

volume = "594",

pages = "293--298",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Role of metal capping layer on highly enhanced electrical performance of In-free Si-Zn-Sn-O thin film transistor

AU - Choi, Jun Young

AU - Kim, Sangsig

AU - Kim, Dae Hwan

AU - Lee, Sang Yeol

N1 - Funding Information: This work was financially supported by the National Research Foundation of Korea ( NRF-2012R1A1A2040308 ) and ( NRF-2013R1A2A2A03069155 ). Publisher Copyright: © 2015 Elsevier B.V.

PY - 2015/11/2

Y1 - 2015/11/2

N2 - Metal capping (MC) layer for Si-Zn-Sn-O thin film of the back channel layer of thin film transistors is proposed to protect from ambient effect and to improve electrical properties. Field effect mobility is improved from 34.46 cm2/V s to 147.59 cm2/V s and excellent stability of Vth ~ 0.6 V is obtained. The floating MC-layer forms a strongly compact-shape current-path as a result of the effective control of the surface potential by the low-resistance of MC-layer. In addition, the proposed device structure effectively prevents the adsorption/desorption reaction of ambient oxygen and water molecules on the surface.

AB - Metal capping (MC) layer for Si-Zn-Sn-O thin film of the back channel layer of thin film transistors is proposed to protect from ambient effect and to improve electrical properties. Field effect mobility is improved from 34.46 cm2/V s to 147.59 cm2/V s and excellent stability of Vth ~ 0.6 V is obtained. The floating MC-layer forms a strongly compact-shape current-path as a result of the effective control of the surface potential by the low-resistance of MC-layer. In addition, the proposed device structure effectively prevents the adsorption/desorption reaction of ambient oxygen and water molecules on the surface.

KW - Metal capping

KW - Oxide

KW - Silicon zinc tin oxide

KW - Thin film transistor

UR - http://www.scopus.com/inward/record.url?scp=84947490263&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2015.04.048

DO - 10.1016/j.tsf.2015.04.048

M3 - Article

AN - SCOPUS:84947490263

VL - 594

SP - 293

EP - 298

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -

Role of metal capping layer on highly enhanced electrical performance of In-free Si-Zn-Sn-O thin film transistor

Abstract

Keywords

ASJC Scopus subject areas

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