Role of metal capping layer on highly enhanced electrical performance of In-free Si-Zn-Sn-O thin film transistor

Jun Young Choi, Sangsig Kim, Dae Hwan Kim, Sang Yeol Lee

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Metal capping (MC) layer for Si-Zn-Sn-O thin film of the back channel layer of thin film transistors is proposed to protect from ambient effect and to improve electrical properties. Field effect mobility is improved from 34.46 cm2/V s to 147.59 cm2/V s and excellent stability of Vth ~ 0.6 V is obtained. The floating MC-layer forms a strongly compact-shape current-path as a result of the effective control of the surface potential by the low-resistance of MC-layer. In addition, the proposed device structure effectively prevents the adsorption/desorption reaction of ambient oxygen and water molecules on the surface.

Original languageEnglish
Pages (from-to)293-298
Number of pages6
JournalThin Solid Films
Volume594
DOIs
Publication statusPublished - 2015 Nov 2

Keywords

  • Metal capping
  • Oxide
  • Silicon zinc tin oxide
  • Thin film transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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