Role of nitrogen and impurity on free carrier concentration in GaAsN grown by chemical beam epitaxy

Takahiro Imai, Hae Seok Lee, Kenichi Nishimura, Hidetoshi Suzuki, Tetsuya Kawahigashi, Takuo Sasaki, Yoshio Ohshita, Masafumi Yamaguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaAsN thin films were grown by chemical beam epitaxy using monomethylhydrazine ((CH3)N2H3) as the N sources, and the role of the nitrogen (N) and impurities (hydrogen (H), carbon (C)) on free carrier concentration was investigated. The N, H, and C concentrations increased with decreasing growth temperature. GaAsN thin film grown at 470°C was n-type conduction, and the donor is thought to be the same in GaAs thin film. On the other hand, the films grown at 390-460°C were p-type conduction. In the range of 420-460°C, the hole concentration increased with decreasing growth temperature, and it decreased below 420°C, respectively. In order to clarify the origin of acceptor in p-GaAsN thin films, the dependence of growth temperature on the hole concentration and N, H, and C concentration were investigated, and the relationship between them was discussed.

Original languageEnglish
Title of host publicationConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
PublisherIEEE Computer Society
Pages842-844
Number of pages3
ISBN (Print)1424400163, 9781424400164
DOIs
Publication statusPublished - 2006
Externally publishedYes
Event2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States
Duration: 2006 May 72006 May 12

Publication series

NameConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume1

Other

Other2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
CountryUnited States
CityWaikoloa, HI
Period06/5/706/5/12

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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  • Cite this

    Imai, T., Lee, H. S., Nishimura, K., Suzuki, H., Kawahigashi, T., Sasaki, T., Ohshita, Y., & Yamaguchi, M. (2006). Role of nitrogen and impurity on free carrier concentration in GaAsN grown by chemical beam epitaxy. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 842-844). [4059761] (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1). IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279588