Role of nitrogen and impurity on free carrier concentration in GaAsN grown by chemical beam epitaxy

Takahiro Imai, Haeseok Lee, Kenichi Nishimura, Hidetoshi Suzuki, Tetsuya Kawahigashi, Takuo Sasaki, Yoshio Ohshita, Masafumi Yamaguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaAsN thin films were grown by chemical beam epitaxy using monomethylhydrazine ((CH3)N2H3) as the N sources, and the role of the nitrogen (N) and impurities (hydrogen (H), carbon (C)) on free carrier concentration was investigated. The N, H, and C concentrations increased with decreasing growth temperature. GaAsN thin film grown at 470°C was n-type conduction, and the donor is thought to be the same in GaAs thin film. On the other hand, the films grown at 390-460°C were p-type conduction. In the range of 420-460°C, the hole concentration increased with decreasing growth temperature, and it decreased below 420°C, respectively. In order to clarify the origin of acceptor in p-GaAsN thin films, the dependence of growth temperature on the hole concentration and N, H, and C concentration were investigated, and the relationship between them was discussed.

Original languageEnglish
Title of host publicationConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Pages842-844
Number of pages3
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States
Duration: 2006 May 72006 May 12

Publication series

NameConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume1

Other

Other2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
CountryUnited States
CityWaikoloa, HI
Period06/5/706/5/12

Fingerprint

Chemical beam epitaxy
Carrier concentration
Growth temperature
Nitrogen
Impurities
Hole concentration
Thin films
Monomethylhydrazine
Hydrogen
Carbon

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Imai, T., Lee, H., Nishimura, K., Suzuki, H., Kawahigashi, T., Sasaki, T., ... Yamaguchi, M. (2007). Role of nitrogen and impurity on free carrier concentration in GaAsN grown by chemical beam epitaxy. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 842-844). [4059761] (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1). https://doi.org/10.1109/WCPEC.2006.279588

Role of nitrogen and impurity on free carrier concentration in GaAsN grown by chemical beam epitaxy. / Imai, Takahiro; Lee, Haeseok; Nishimura, Kenichi; Suzuki, Hidetoshi; Kawahigashi, Tetsuya; Sasaki, Takuo; Ohshita, Yoshio; Yamaguchi, Masafumi.

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. 2007. p. 842-844 4059761 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Imai, T, Lee, H, Nishimura, K, Suzuki, H, Kawahigashi, T, Sasaki, T, Ohshita, Y & Yamaguchi, M 2007, Role of nitrogen and impurity on free carrier concentration in GaAsN grown by chemical beam epitaxy. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4059761, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, vol. 1, pp. 842-844, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 06/5/7. https://doi.org/10.1109/WCPEC.2006.279588
Imai T, Lee H, Nishimura K, Suzuki H, Kawahigashi T, Sasaki T et al. Role of nitrogen and impurity on free carrier concentration in GaAsN grown by chemical beam epitaxy. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. 2007. p. 842-844. 4059761. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). https://doi.org/10.1109/WCPEC.2006.279588
Imai, Takahiro ; Lee, Haeseok ; Nishimura, Kenichi ; Suzuki, Hidetoshi ; Kawahigashi, Tetsuya ; Sasaki, Takuo ; Ohshita, Yoshio ; Yamaguchi, Masafumi. / Role of nitrogen and impurity on free carrier concentration in GaAsN grown by chemical beam epitaxy. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. 2007. pp. 842-844 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).
@inproceedings{4176bd1a3a444997bea2737044e4edae,
title = "Role of nitrogen and impurity on free carrier concentration in GaAsN grown by chemical beam epitaxy",
abstract = "GaAsN thin films were grown by chemical beam epitaxy using monomethylhydrazine ((CH3)N2H3) as the N sources, and the role of the nitrogen (N) and impurities (hydrogen (H), carbon (C)) on free carrier concentration was investigated. The N, H, and C concentrations increased with decreasing growth temperature. GaAsN thin film grown at 470°C was n-type conduction, and the donor is thought to be the same in GaAs thin film. On the other hand, the films grown at 390-460°C were p-type conduction. In the range of 420-460°C, the hole concentration increased with decreasing growth temperature, and it decreased below 420°C, respectively. In order to clarify the origin of acceptor in p-GaAsN thin films, the dependence of growth temperature on the hole concentration and N, H, and C concentration were investigated, and the relationship between them was discussed.",
author = "Takahiro Imai and Haeseok Lee and Kenichi Nishimura and Hidetoshi Suzuki and Tetsuya Kawahigashi and Takuo Sasaki and Yoshio Ohshita and Masafumi Yamaguchi",
year = "2007",
month = "12",
day = "1",
doi = "10.1109/WCPEC.2006.279588",
language = "English",
isbn = "1424400163",
series = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",
pages = "842--844",
booktitle = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",

}

TY - GEN

T1 - Role of nitrogen and impurity on free carrier concentration in GaAsN grown by chemical beam epitaxy

AU - Imai, Takahiro

AU - Lee, Haeseok

AU - Nishimura, Kenichi

AU - Suzuki, Hidetoshi

AU - Kawahigashi, Tetsuya

AU - Sasaki, Takuo

AU - Ohshita, Yoshio

AU - Yamaguchi, Masafumi

PY - 2007/12/1

Y1 - 2007/12/1

N2 - GaAsN thin films were grown by chemical beam epitaxy using monomethylhydrazine ((CH3)N2H3) as the N sources, and the role of the nitrogen (N) and impurities (hydrogen (H), carbon (C)) on free carrier concentration was investigated. The N, H, and C concentrations increased with decreasing growth temperature. GaAsN thin film grown at 470°C was n-type conduction, and the donor is thought to be the same in GaAs thin film. On the other hand, the films grown at 390-460°C were p-type conduction. In the range of 420-460°C, the hole concentration increased with decreasing growth temperature, and it decreased below 420°C, respectively. In order to clarify the origin of acceptor in p-GaAsN thin films, the dependence of growth temperature on the hole concentration and N, H, and C concentration were investigated, and the relationship between them was discussed.

AB - GaAsN thin films were grown by chemical beam epitaxy using monomethylhydrazine ((CH3)N2H3) as the N sources, and the role of the nitrogen (N) and impurities (hydrogen (H), carbon (C)) on free carrier concentration was investigated. The N, H, and C concentrations increased with decreasing growth temperature. GaAsN thin film grown at 470°C was n-type conduction, and the donor is thought to be the same in GaAs thin film. On the other hand, the films grown at 390-460°C were p-type conduction. In the range of 420-460°C, the hole concentration increased with decreasing growth temperature, and it decreased below 420°C, respectively. In order to clarify the origin of acceptor in p-GaAsN thin films, the dependence of growth temperature on the hole concentration and N, H, and C concentration were investigated, and the relationship between them was discussed.

UR - http://www.scopus.com/inward/record.url?scp=41749097214&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41749097214&partnerID=8YFLogxK

U2 - 10.1109/WCPEC.2006.279588

DO - 10.1109/WCPEC.2006.279588

M3 - Conference contribution

AN - SCOPUS:41749097214

SN - 1424400163

SN - 9781424400164

T3 - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

SP - 842

EP - 844

BT - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

ER -