Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, H. Amano, S. J. Pearton, I. H. Lee, Q. Sun, J. Han, S. Yu Karpov

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Abstract

The correlation of integrated microcathodoluminescence efficiency with crystalline quality and deep trap density of nonpolar GaN films grown by metal organic chemical vapor deposition on semi-insulating 6H-m-SiC or r-sapphire is analyzed. The results suggest a strong influence of nonradiative recombination centers whose concentration decreases with decreased density of extended defects. Electron traps with energy levels at Ec -0.6 eV and which pin the Fermi level in films with high defect density are the most likely candidates for the decrease in light emission efficiency in nonpolar GaN.

Original languageEnglish
Article number072104
JournalApplied Physics Letters
Volume98
Issue number7
DOIs
Publication statusPublished - 2011 Feb 14

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Amano, H., Pearton, S. J., Lee, I. H., Sun, Q., Han, J., & Karpov, S. Y. (2011). Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency. Applied Physics Letters, 98(7), [072104]. https://doi.org/10.1063/1.3555470