Role of Polysilicon in Poly-Si/SiOx Passivating Contact Solar Cells

Hyunjung Park, Se Jin Park, Soohyun Bae, Ji Yeon Hyun, Chang Hyun Lee, Seung Hyun Shin, Yoon Mook Kang, Haeseok Lee, Donghwan Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the passivation qualities of polySi contacts according to several material and fabrication properties to study their role in improving the efficiency of solar cells. Our observations indicate that P in-diffusion degrades the implied open circuit voltage (iVOC), while gettering increases it. Thick, highly doped poly-Si is needed for high iVOC; however, this increases parasitic absorption. Hence, we suggest a new approach to fabricating highly doped, thin poly-Si contact, with high iVOC, via etch-back. On etching, the iVOC remained at its original value until the poly-Si was fully etched, and we obtained an improved solar cell efficiency of 20.59%.

Original languageEnglish
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2173-2175
Number of pages3
ISBN (Electronic)9781538685297
DOIs
Publication statusPublished - 2018 Nov 26
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: 2018 Jun 102018 Jun 15

Other

Other7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
CountryUnited States
CityWaikoloa Village
Period18/6/1018/6/15

Fingerprint

Polysilicon
Solar cells
Open circuit voltage
Passivation
Etching
Fabrication

Keywords

  • Photovoltaic cells
  • silicon devices

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Park, H., Park, S. J., Bae, S., Hyun, J. Y., Lee, C. H., Shin, S. H., ... Kim, D. (2018). Role of Polysilicon in Poly-Si/SiOx Passivating Contact Solar Cells. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 2173-2175). [8547754] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8547754

Role of Polysilicon in Poly-Si/SiOx Passivating Contact Solar Cells. / Park, Hyunjung; Park, Se Jin; Bae, Soohyun; Hyun, Ji Yeon; Lee, Chang Hyun; Shin, Seung Hyun; Kang, Yoon Mook; Lee, Haeseok; Kim, Donghwan.

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 2173-2175 8547754.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Park, H, Park, SJ, Bae, S, Hyun, JY, Lee, CH, Shin, SH, Kang, YM, Lee, H & Kim, D 2018, Role of Polysilicon in Poly-Si/SiOx Passivating Contact Solar Cells. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8547754, Institute of Electrical and Electronics Engineers Inc., pp. 2173-2175, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 18/6/10. https://doi.org/10.1109/PVSC.2018.8547754
Park H, Park SJ, Bae S, Hyun JY, Lee CH, Shin SH et al. Role of Polysilicon in Poly-Si/SiOx Passivating Contact Solar Cells. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. p. 2173-2175. 8547754 https://doi.org/10.1109/PVSC.2018.8547754
Park, Hyunjung ; Park, Se Jin ; Bae, Soohyun ; Hyun, Ji Yeon ; Lee, Chang Hyun ; Shin, Seung Hyun ; Kang, Yoon Mook ; Lee, Haeseok ; Kim, Donghwan. / Role of Polysilicon in Poly-Si/SiOx Passivating Contact Solar Cells. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 2173-2175
@inproceedings{82935440d7664291b70622268071764d,
title = "Role of Polysilicon in Poly-Si/SiOx Passivating Contact Solar Cells",
abstract = "We investigated the passivation qualities of polySi contacts according to several material and fabrication properties to study their role in improving the efficiency of solar cells. Our observations indicate that P in-diffusion degrades the implied open circuit voltage (iVOC), while gettering increases it. Thick, highly doped poly-Si is needed for high iVOC; however, this increases parasitic absorption. Hence, we suggest a new approach to fabricating highly doped, thin poly-Si contact, with high iVOC, via etch-back. On etching, the iVOC remained at its original value until the poly-Si was fully etched, and we obtained an improved solar cell efficiency of 20.59{\%}.",
keywords = "Photovoltaic cells, silicon devices",
author = "Hyunjung Park and Park, {Se Jin} and Soohyun Bae and Hyun, {Ji Yeon} and Lee, {Chang Hyun} and Shin, {Seung Hyun} and Kang, {Yoon Mook} and Haeseok Lee and Donghwan Kim",
year = "2018",
month = "11",
day = "26",
doi = "10.1109/PVSC.2018.8547754",
language = "English",
pages = "2173--2175",
booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Role of Polysilicon in Poly-Si/SiOx Passivating Contact Solar Cells

AU - Park, Hyunjung

AU - Park, Se Jin

AU - Bae, Soohyun

AU - Hyun, Ji Yeon

AU - Lee, Chang Hyun

AU - Shin, Seung Hyun

AU - Kang, Yoon Mook

AU - Lee, Haeseok

AU - Kim, Donghwan

PY - 2018/11/26

Y1 - 2018/11/26

N2 - We investigated the passivation qualities of polySi contacts according to several material and fabrication properties to study their role in improving the efficiency of solar cells. Our observations indicate that P in-diffusion degrades the implied open circuit voltage (iVOC), while gettering increases it. Thick, highly doped poly-Si is needed for high iVOC; however, this increases parasitic absorption. Hence, we suggest a new approach to fabricating highly doped, thin poly-Si contact, with high iVOC, via etch-back. On etching, the iVOC remained at its original value until the poly-Si was fully etched, and we obtained an improved solar cell efficiency of 20.59%.

AB - We investigated the passivation qualities of polySi contacts according to several material and fabrication properties to study their role in improving the efficiency of solar cells. Our observations indicate that P in-diffusion degrades the implied open circuit voltage (iVOC), while gettering increases it. Thick, highly doped poly-Si is needed for high iVOC; however, this increases parasitic absorption. Hence, we suggest a new approach to fabricating highly doped, thin poly-Si contact, with high iVOC, via etch-back. On etching, the iVOC remained at its original value until the poly-Si was fully etched, and we obtained an improved solar cell efficiency of 20.59%.

KW - Photovoltaic cells

KW - silicon devices

UR - http://www.scopus.com/inward/record.url?scp=85059894796&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059894796&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2018.8547754

DO - 10.1109/PVSC.2018.8547754

M3 - Conference contribution

AN - SCOPUS:85059894796

SP - 2173

EP - 2175

BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

PB - Institute of Electrical and Electronics Engineers Inc.

ER -