Role of surface steps in the arrangement of silicon nano-dots on a vicinal Si(111) surface: Scanning tunneling microscopy investigation

Jeong Sook Ha, Kang Ho Park, Young Jo Ko, Kyungwan Park

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The role of surface steps in the arrangement of silicon nano-dots on a vicinal Si(111) surface was investigated using scanning tunneling microscopy (STM). Silicon nano-dots were formed on Si(111) surfaces using thermal nitridation followed by oxygen-induced selective etching of silicon area using silicon nitride islands as masks. The results show that the silicon nitride islands grow on the single height step edges which give rise to the arrangement of silicon dots along the step edges upon successive oxygen-induced etching of silicon surface.

Original languageEnglish
Pages (from-to)747-751
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number2
DOIs
Publication statusPublished - 2002 Mar 1

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

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